Infineon Technologies IRLML2030TRPBF
- Part Number:
- IRLML2030TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479179-IRLML2030TRPBF
- Description:
- MOSFET N-CH 30V 2.7A SOT-23-3
- Datasheet:
- IRLML2030TRPBF
Infineon Technologies IRLML2030TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2030TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2003
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance100MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time4.1 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 2.7A, 10V
- Vgs(th) (Max) @ Id2.3V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds110pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.7A Ta
- Gate Charge (Qg) (Max) @ Vgs1nC @ 4.5V
- Rise Time3.3ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2.9 ns
- Turn-Off Delay Time4.5 ns
- Continuous Drain Current (ID)2.7A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)2.2A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)11A
- Recovery Time14 ns
- Nominal Vgs1.7 V
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLML2030TRPBF Description
The Infineon Technologies IRLML2030TRPBF is from the StrongIRFET? power MOSFET family optimized for low RDS(on) and high current capability. IRLML2030TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRLML2030TRPBF Features
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
IRLML2030TRPBF Applicaions
DC switch
Load switch
Battery protection
SMPS
The Infineon Technologies IRLML2030TRPBF is from the StrongIRFET? power MOSFET family optimized for low RDS(on) and high current capability. IRLML2030TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRLML2030TRPBF Features
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
IRLML2030TRPBF Applicaions
DC switch
Load switch
Battery protection
SMPS
IRLML2030TRPBF More Descriptions
Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55 150 deg.C, SMD, SOT23
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
The three parts on the right have similar specifications to IRLML2030TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureSupplier Device PackageDrain to Source Voltage (Vdss)TerminationVoltage - Rated DCCurrent RatingDual Supply VoltageView Compare
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IRLML2030TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003e3Active1 (Unlimited)3EAR99100MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING11.3W TaSingleENHANCEMENT MODE1.3W4.1 nsN-ChannelSWITCHING100m Ω @ 2.7A, 10V2.3V @ 25μA110pF @ 15V2.7A Ta1nC @ 4.5V3.3ns4.5V 10V±20V2.9 ns4.5 ns2.7A1.7V20V2.2A30V11A14 ns1.7 V1.016mm3.0226mm1.397mmNo SVHCNoROHS3 CompliantLead Free--------
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10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2008e3Discontinued1 (Unlimited)3EAR9945MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING11.25W TaSingleENHANCEMENT MODE1.25W7.5 nsN-ChannelSWITCHING45m Ω @ 4.2A, 4.5V1.2V @ 250μA740pF @ 15V4.2A Ta12nC @ 5V10ns2.5V 4.5V±12V26 ns54 ns4.2A-12V-20V---1.016mm3.0226mm1.397mm-NoROHS3 CompliantLead FreeHIGH RELIABILITY------
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--Surface MountSOT-23-6---55°C~150°C TJCut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---1.7W Ta----P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V-2.5V 4.5V±12V---------------Non-RoHS Compliant--Micro6™(TSOP-6)12V----
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7 WeeksSurface MountSurface MountSOT-23-66SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Not For New Designs1 (Unlimited)6EAR99180mOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING11.7W TaSingleENHANCEMENT MODE1.7W10 nsP-ChannelSWITCHING180m Ω @ 1.6A, 10V1V @ 250μA170pF @ 25V2.4A Ta11nC @ 10V12ns4.5V 10V±20V8.4 ns20 ns-2.3A-1V20V2.4A-30V---1 V1.4478mm2.9972mm1.75mmNo SVHCNoROHS3 CompliantLead FreeULTRA LOW RESISTANCE-30VSMD/SMT-30V-2.3A-30V
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