IRLML2030TRPBF

Infineon Technologies IRLML2030TRPBF

Part Number:
IRLML2030TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479179-IRLML2030TRPBF
Description:
MOSFET N-CH 30V 2.7A SOT-23-3
ECAD Model:
Datasheet:
IRLML2030TRPBF

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Specifications
Infineon Technologies IRLML2030TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2030TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    100MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    4.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 2.7A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 25μA
  • Input Capacitance (Ciss) (Max) @ Vds
    110pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1nC @ 4.5V
  • Rise Time
    3.3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.9 ns
  • Turn-Off Delay Time
    4.5 ns
  • Continuous Drain Current (ID)
    2.7A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2.2A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    11A
  • Recovery Time
    14 ns
  • Nominal Vgs
    1.7 V
  • Height
    1.016mm
  • Length
    3.0226mm
  • Width
    1.397mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML2030TRPBF Description
The Infineon Technologies IRLML2030TRPBF is from the StrongIRFET? power MOSFET family optimized for low RDS(on) and high current capability. IRLML2030TRPBF  is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

IRLML2030TRPBF Features
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Industry-standard surface-mount power package
Product qualification according to JEDEC standard

IRLML2030TRPBF Applicaions
DC switch
Load switch
Battery protection
SMPS
IRLML2030TRPBF More Descriptions
Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55 150 deg.C, SMD, SOT23
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
Product Comparison
The three parts on the right have similar specifications to IRLML2030TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Additional Feature
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Termination
    Voltage - Rated DC
    Current Rating
    Dual Supply Voltage
    View Compare
  • IRLML2030TRPBF
    IRLML2030TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    100MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    4.1 ns
    N-Channel
    SWITCHING
    100m Ω @ 2.7A, 10V
    2.3V @ 25μA
    110pF @ 15V
    2.7A Ta
    1nC @ 4.5V
    3.3ns
    4.5V 10V
    ±20V
    2.9 ns
    4.5 ns
    2.7A
    1.7V
    20V
    2.2A
    30V
    11A
    14 ns
    1.7 V
    1.016mm
    3.0226mm
    1.397mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML2502GTRPBF
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    45MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.25W Ta
    Single
    ENHANCEMENT MODE
    1.25W
    7.5 ns
    N-Channel
    SWITCHING
    45m Ω @ 4.2A, 4.5V
    1.2V @ 250μA
    740pF @ 15V
    4.2A Ta
    12nC @ 5V
    10ns
    2.5V 4.5V
    ±12V
    26 ns
    54 ns
    4.2A
    -
    12V
    -
    20V
    -
    -
    -
    1.016mm
    3.0226mm
    1.397mm
    -
    No
    ROHS3 Compliant
    Lead Free
    HIGH RELIABILITY
    -
    -
    -
    -
    -
    -
  • IRLMS4502TR
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1.7W Ta
    -
    -
    -
    -
    P-Channel
    -
    42mOhm @ 5.5A, 4.5V
    600mV @ 250μA
    1820pF @ 10V
    5.5A Ta
    33nC @ 5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    Micro6™(TSOP-6)
    12V
    -
    -
    -
    -
  • IRLMS5703TRPBF
    7 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    180mOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.7W Ta
    Single
    ENHANCEMENT MODE
    1.7W
    10 ns
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    12ns
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    -1V
    20V
    2.4A
    -30V
    -
    -
    -1 V
    1.4478mm
    2.9972mm
    1.75mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ULTRA LOW RESISTANCE
    -
    30V
    SMD/SMT
    -30V
    -2.3A
    -30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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