Infineon Technologies IRLML2246TRPBF
- Part Number:
- IRLML2246TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813610-IRLML2246TRPBF
- Description:
- MOSFET P-CH 20V 2.6A SOT23
- Datasheet:
- IRLML2246TRPBF
Infineon Technologies IRLML2246TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2246TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance236MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time5.3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs135m Ω @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 10μA
- Input Capacitance (Ciss) (Max) @ Vds220pF @ 16V
- Current - Continuous Drain (Id) @ 25°C2.6A Ta
- Gate Charge (Qg) (Max) @ Vgs2.9nC @ 4.5V
- Rise Time7.7ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)2.6A
- Threshold Voltage-1.1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Recovery Time26 ns
- Nominal Vgs-1.1 V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLML2246TRPBF Overview
The maximum input capacitance of this device is 220pF @ 16V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1.1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
IRLML2246TRPBF Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 26 ns
a threshold voltage of -1.1V
a 20V drain to source voltage (Vdss)
IRLML2246TRPBF Applications
There are a lot of Infineon Technologies
IRLML2246TRPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 220pF @ 16V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1.1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
IRLML2246TRPBF Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 26 ns
a threshold voltage of -1.1V
a 20V drain to source voltage (Vdss)
IRLML2246TRPBF Applications
There are a lot of Infineon Technologies
IRLML2246TRPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRLML2246TRPBF More Descriptions
T&R / MOSFET, P-CHANNEL, -20V, -2.6A, 135 mOhm, -2.5V capable, SOT-23
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single P-Channel 20 V 236 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single P-Channel 20 V 236 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
The three parts on the right have similar specifications to IRLML2246TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Supplier Device PackageTerminationAdditional FeatureVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)Dual Supply VoltageView Compare
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IRLML2246TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2012e3Active1 (Unlimited)3EAR99236MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING11.3W TaSingleENHANCEMENT MODE1.3W5.3 nsP-ChannelSWITCHING135m Ω @ 2.6A, 4.5V1.1V @ 10μA220pF @ 16V2.6A Ta2.9nC @ 4.5V7.7ns20V2.5V 4.5V±12V16 ns26 ns2.6A-1.1V12V-20V26 ns-1.1 V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
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12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2011e3Active1 (Unlimited)3EAR9995MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING11.3W TaSingleENHANCEMENT MODE1.3W7 nsP-ChannelSWITCHING54m Ω @ 4.3A, 4.5V1.1V @ 10μA570pF @ 16V4.3A Ta6.9nC @ 4.5V12ns20V2.5V 4.5V±12V25 ns34 ns4.3A-1.1V12V-20V32 ns-1.1 V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free26030-------
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--Surface MountSOT-23-6---55°C~150°C TJCut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---1.7W Ta----P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V-12V2.5V 4.5V±12V-------------Non-RoHS Compliant---Micro6™(TSOP-6)------
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7 WeeksSurface MountSurface MountSOT-23-66SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Not For New Designs1 (Unlimited)6EAR99180mOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING11.7W TaSingleENHANCEMENT MODE1.7W10 nsP-ChannelSWITCHING180m Ω @ 1.6A, 10V1V @ 250μA170pF @ 25V2.4A Ta11nC @ 10V12ns30V4.5V 10V±20V8.4 ns20 ns-2.3A-1V20V-30V--1 V1.4478mm2.9972mm1.75mmNo SVHCNoROHS3 CompliantLead Free---SMD/SMTULTRA LOW RESISTANCE-30V-2.3A2.4A-30V
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