IRLML2246TRPBF

Infineon Technologies IRLML2246TRPBF

Part Number:
IRLML2246TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3813610-IRLML2246TRPBF
Description:
MOSFET P-CH 20V 2.6A SOT23
ECAD Model:
Datasheet:
IRLML2246TRPBF

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Specifications
Infineon Technologies IRLML2246TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2246TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    236MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    5.3 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    135m Ω @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    2.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.9nC @ 4.5V
  • Rise Time
    7.7ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    2.6A
  • Threshold Voltage
    -1.1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Recovery Time
    26 ns
  • Nominal Vgs
    -1.1 V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML2246TRPBF Overview
The maximum input capacitance of this device is 220pF @ 16V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1.1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

IRLML2246TRPBF Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 26 ns
a threshold voltage of -1.1V
a 20V drain to source voltage (Vdss)


IRLML2246TRPBF Applications
There are a lot of Infineon Technologies
IRLML2246TRPBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRLML2246TRPBF More Descriptions
T&R / MOSFET, P-CHANNEL, -20V, -2.6A, 135 mOhm, -2.5V capable, SOT-23
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single P-Channel 20 V 236 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Product Comparison
The three parts on the right have similar specifications to IRLML2246TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Supplier Device Package
    Termination
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    View Compare
  • IRLML2246TRPBF
    IRLML2246TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    236MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    5.3 ns
    P-Channel
    SWITCHING
    135m Ω @ 2.6A, 4.5V
    1.1V @ 10μA
    220pF @ 16V
    2.6A Ta
    2.9nC @ 4.5V
    7.7ns
    20V
    2.5V 4.5V
    ±12V
    16 ns
    26 ns
    2.6A
    -1.1V
    12V
    -20V
    26 ns
    -1.1 V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML2244TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    95MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    7 ns
    P-Channel
    SWITCHING
    54m Ω @ 4.3A, 4.5V
    1.1V @ 10μA
    570pF @ 16V
    4.3A Ta
    6.9nC @ 4.5V
    12ns
    20V
    2.5V 4.5V
    ±12V
    25 ns
    34 ns
    4.3A
    -1.1V
    12V
    -20V
    32 ns
    -1.1 V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    260
    30
    -
    -
    -
    -
    -
    -
    -
  • IRLMS4502TR
    -
    -
    Surface Mount
    SOT-23-6
    -
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    HEXFET®
    2003
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1.7W Ta
    -
    -
    -
    -
    P-Channel
    -
    42mOhm @ 5.5A, 4.5V
    600mV @ 250μA
    1820pF @ 10V
    5.5A Ta
    33nC @ 5V
    -
    12V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    Micro6™(TSOP-6)
    -
    -
    -
    -
    -
    -
  • IRLMS5703TRPBF
    7 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    180mOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    1
    1.7W Ta
    Single
    ENHANCEMENT MODE
    1.7W
    10 ns
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    12ns
    30V
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    -1V
    20V
    -30V
    -
    -1 V
    1.4478mm
    2.9972mm
    1.75mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    SMD/SMT
    ULTRA LOW RESISTANCE
    -30V
    -2.3A
    2.4A
    -30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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