Infineon Technologies IRLML5103TRPBF
- Part Number:
- IRLML5103TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813657-IRLML5103TRPBF
- Description:
- MOSFET P-CH 30V 760MA SOT-23
- ECAD Model:
-
- Datasheet:
- IRLML5103TRPBF
Infineon Technologies IRLML5103TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML5103TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierMicro(SOT23)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance600mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-610mA
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max540mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation540mW
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs600m Ω @ 600mA, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
- Current - Continuous Drain (Id) @ 25°C760mA Ta
- Gate Charge (Qg) (Max) @ Vgs5.1nC @ 10V
- Rise Time8.2ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)-760mA
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.76A
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- Nominal Vgs-1 V
- Min Breakdown Voltage30V
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The IRLML5103TRPBF is a HEXFET? Power MOSFET. The manufacturing techniques used in fifth-generation HEXFETs allow for extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, offers the designer a highly efficient and dependable device that can be used in a wide range of applications.
Features
● Generation V Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● SOT-23 Footprint ● ROHS Compliant, Halogen-Free ● Lead-Free ● Fast Switching ● Available in Tape and Reel ● Low Profile (＜1.1mm)
Applications
● Portable electronics ● PCMCIA cards ● Switch ● Solar inverters ● Automotive applications
The IRLML5103TRPBF is a HEXFET? Power MOSFET. The manufacturing techniques used in fifth-generation HEXFETs allow for extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, offers the designer a highly efficient and dependable device that can be used in a wide range of applications.
Features
● Generation V Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● SOT-23 Footprint ● ROHS Compliant, Halogen-Free ● Lead-Free ● Fast Switching ● Available in Tape and Reel ● Low Profile (＜1.1mm)
Applications
● Portable electronics ● PCMCIA cards ● Switch ● Solar inverters ● Automotive applications
IRLML5103TRPBF More Descriptions
INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS /-20V
Trans MOSFET P-CH Si 30V 0.76A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 760MA SOT-23
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET P-CH 30V 0.76A 3-Pin Micro T/R - Product that comes on tape, but is not reeled
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
P Channel Mosfet, -30V, 610Ma, Sot-23; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:610Ma; On Resistance Rds(On):0.6Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET | Target Applications: DC Switches; Load Switch
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS /-20V
Trans MOSFET P-CH Si 30V 0.76A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 760MA SOT-23
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Trans MOSFET P-CH 30V 0.76A 3-Pin Micro T/R - Product that comes on tape, but is not reeled
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
P Channel Mosfet, -30V, 610Ma, Sot-23; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:610Ma; On Resistance Rds(On):0.6Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET | Target Applications: DC Switches; Load Switch
The three parts on the right have similar specifications to IRLML5103TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsMin Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountJESD-30 CodeOperating Temperature (Max)ConfigurationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Power Dissipation-Max (Abs)View Compare
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IRLML5103TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICONMicro(SOT23)-55°C~150°C TJTape & Reel (TR)HEXFET®2004e3Active1 (Unlimited)3SMD/SMTEAR99600mOhmMatte Tin (Sn)LOGIC LEVEL COMPATIBLEOther Transistors-30VMOSFET (Metal Oxide)DUALGULL WING260-610mA30Not Qualified1540mW TaSingleENHANCEMENT MODE540mW10 nsP-ChannelSWITCHING600m Ω @ 600mA, 10V1V @ 250μA75pF @ 25V760mA Ta5.1nC @ 10V8.2ns4.5V 10V±20V16 ns23 ns-760mA-1V20V0.76A-30V-30V-1 V30V1.016mm3.0226mm1.397mmNo SVHCROHS3 CompliantLead Free------------- -
--Surface MountSOT-23-6----55°C~150°C TJCut Tape (CT)HEXFET®2003-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)-------1.7W Ta----P-Channel-42mOhm @ 5.5A, 4.5V600mV @ 250μA1820pF @ 10V5.5A Ta33nC @ 5V-2.5V 4.5V±12V--------------Non-RoHS Compliant-Micro6™(TSOP-6)12V----------
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--Surface MountTO-236-3, SC-59, SOT-23-3-SILICON--Cut Tape (CT)HEXFET®2003e3Obsolete1 (Unlimited)3-EAR99-Matte Tin (Sn)HIGH RELIABILITYOther Transistors-MOSFET (Metal Oxide)DUALGULL WING260-30Not Qualified1--ENHANCEMENT MODE--P-ChannelSWITCHING65m Ω @ 3.7A, 4.5V1.2V @ 250μA633pF @ 10V3.7A Ta12nC @ 5V--------3.7A--------Non-RoHS Compliant--20VYESR-PDSO-G3150°CSINGLE WITH BUILT-IN DIODETO-236AB0.065Ohm22A20V11 mJ1.3W
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--Surface MountTO-236-3, SC-59, SOT-23-3-SILICON--TubeHEXFET®2003e3Obsolete1 (Unlimited)3-EAR99-Matte Tin (Sn)-Other Transistors-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-NOT SPECIFIEDNot Qualified11.25W Ta-ENHANCEMENT MODE--P-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V-4.5V 10V±20V-----3A--------Non-RoHS Compliant--30VYESR-PDSO-G3150°CSINGLE WITH BUILT-IN DIODE-0.098Ohm24A30V--
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