Infineon Technologies IRLML2244TRPBF
- Part Number:
- IRLML2244TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813603-IRLML2244TRPBF
- Description:
- MOSFET P-CH 20V 4.3A SOT23
- Datasheet:
- IRLML2244TRPBF
Infineon Technologies IRLML2244TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2244TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance95MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs54m Ω @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 10μA
- Input Capacitance (Ciss) (Max) @ Vds570pF @ 16V
- Current - Continuous Drain (Id) @ 25°C4.3A Ta
- Gate Charge (Qg) (Max) @ Vgs6.9nC @ 4.5V
- Rise Time12ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time34 ns
- Continuous Drain Current (ID)4.3A
- Threshold Voltage-1.1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Recovery Time32 ns
- Nominal Vgs-1.1 V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLML2244TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.3A.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 34 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
IRLML2244TRPBF Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 34 ns
a threshold voltage of -1.1V
a 20V drain to source voltage (Vdss)
IRLML2244TRPBF Applications
There are a lot of Infineon Technologies
IRLML2244TRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.3A.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 34 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.
IRLML2244TRPBF Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 34 ns
a threshold voltage of -1.1V
a 20V drain to source voltage (Vdss)
IRLML2244TRPBF Applications
There are a lot of Infineon Technologies
IRLML2244TRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRLML2244TRPBF More Descriptions
Transistor: P-MOSFET; unipolar; -20V; -4.3A; 0.054ohm; 1.3W; -55 150 deg.C; SMD; SOT23
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single P-Channel 20 V 54 mOhm 6.9 nC HEXFET® Power Mosfet - SOT-23
Transistor P-MOSFET; 20V; 12V; 95mOhm; 4,3A; 1,3W; -55°C ~ 150°C;; Equivalent: IRLML2244PBF; IRLML2244TRPBF; TCJ2321; IRLML2244;
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 95 / Gate-Source Voltage V = 12 / Fall Time ns = 25 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single P-Channel 20 V 54 mOhm 6.9 nC HEXFET® Power Mosfet - SOT-23
Transistor P-MOSFET; 20V; 12V; 95mOhm; 4,3A; 1,3W; -55°C ~ 150°C;; Equivalent: IRLML2244PBF; IRLML2244TRPBF; TCJ2321; IRLML2244;
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 95 / Gate-Source Voltage V = 12 / Fall Time ns = 25 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
The three parts on the right have similar specifications to IRLML2244TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureAdditional FeaturePolarity/Channel TypeDrain Current-Max (Abs) (ID)FET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputSurface MountJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Power Dissipation-Max (Abs)View Compare
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IRLML2244TRPBF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2011e3Active1 (Unlimited)3EAR9995MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603011.3W TaSingleENHANCEMENT MODE1.3W7 nsP-ChannelSWITCHING54m Ω @ 4.3A, 4.5V1.1V @ 10μA570pF @ 16V4.3A Ta6.9nC @ 4.5V12ns20V2.5V 4.5V±12V25 ns34 ns4.3A-1.1V12V-20V32 ns-1.1 V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------------
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-Surface Mount-SOT-233-----e3-1 (Unlimited)3EAR99-Matte Tin (Sn)Other Transistors-DUALGULL WING--1540mWSingleENHANCEMENT MODE540mW10 ns-SWITCHING-----8.2ns30V--16 ns23 ns760mA-20V-30V--1.016mm3.0226mm1.397mm-NoRoHS Compliant-150°C-55°CHIGH RELIABILITYP-CHANNEL0.76AMETAL-OXIDE SEMICONDUCTOR600mOhm600 mΩ75pF-----------
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--Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-Cut Tape (CT)HEXFET®2003e3Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260301--ENHANCEMENT MODE--P-ChannelSWITCHING65m Ω @ 3.7A, 4.5V1.2V @ 250μA633pF @ 10V3.7A Ta12nC @ 5V-20V---------------Non-RoHS Compliant---HIGH RELIABILITY-3.7A----YESR-PDSO-G3Not Qualified150°CSINGLE WITH BUILT-IN DIODETO-236AB0.065Ohm22A20V11 mJ1.3W
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--Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-TubeHEXFET®2003e3Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED11.25W Ta-ENHANCEMENT MODE--P-ChannelSWITCHING98m Ω @ 3A, 10V2.5V @ 250μA510pF @ 25V3A Ta14nC @ 10V-30V4.5V 10V±20V-------------Non-RoHS Compliant-----3A----YESR-PDSO-G3Not Qualified150°CSINGLE WITH BUILT-IN DIODE-0.098Ohm24A30V--
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