IRLML2244TRPBF

Infineon Technologies IRLML2244TRPBF

Part Number:
IRLML2244TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3813603-IRLML2244TRPBF
Description:
MOSFET P-CH 20V 4.3A SOT23
ECAD Model:
Datasheet:
IRLML2244TRPBF

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Specifications
Infineon Technologies IRLML2244TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML2244TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    95MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    54m Ω @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6.9nC @ 4.5V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    4.3A
  • Threshold Voltage
    -1.1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Recovery Time
    32 ns
  • Nominal Vgs
    -1.1 V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLML2244TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 570pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.3A.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 34 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1.1V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.

IRLML2244TRPBF Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 34 ns
a threshold voltage of -1.1V
a 20V drain to source voltage (Vdss)


IRLML2244TRPBF Applications
There are a lot of Infineon Technologies
IRLML2244TRPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRLML2244TRPBF More Descriptions
Transistor: P-MOSFET; unipolar; -20V; -4.3A; 0.054ohm; 1.3W; -55 150 deg.C; SMD; SOT23
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
Single P-Channel 20 V 54 mOhm 6.9 nC HEXFET® Power Mosfet - SOT-23
Transistor P-MOSFET; 20V; 12V; 95mOhm; 4,3A; 1,3W; -55°C ~ 150°C;; Equivalent: IRLML2244PBF; IRLML2244TRPBF; TCJ2321; IRLML2244;
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V Rohs Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.3 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 95 / Gate-Source Voltage V = 12 / Fall Time ns = 25 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
Product Comparison
The three parts on the right have similar specifications to IRLML2244TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Capacitance - Input
    Surface Mount
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Power Dissipation-Max (Abs)
    View Compare
  • IRLML2244TRPBF
    IRLML2244TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    95MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    7 ns
    P-Channel
    SWITCHING
    54m Ω @ 4.3A, 4.5V
    1.1V @ 10μA
    570pF @ 16V
    4.3A Ta
    6.9nC @ 4.5V
    12ns
    20V
    2.5V 4.5V
    ±12V
    25 ns
    34 ns
    4.3A
    -1.1V
    12V
    -20V
    32 ns
    -1.1 V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML5103GTRPBF
    -
    Surface Mount
    -
    SOT-23
    3
    -
    -
    -
    -
    -
    e3
    -
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    -
    DUAL
    GULL WING
    -
    -
    1
    540mW
    Single
    ENHANCEMENT MODE
    540mW
    10 ns
    -
    SWITCHING
    -
    -
    -
    -
    -
    8.2ns
    30V
    -
    -
    16 ns
    23 ns
    760mA
    -
    20V
    -30V
    -
    -
    1.016mm
    3.0226mm
    1.397mm
    -
    No
    RoHS Compliant
    -
    150°C
    -55°C
    HIGH RELIABILITY
    P-CHANNEL
    0.76A
    METAL-OXIDE SEMICONDUCTOR
    600mOhm
    600 mΩ
    75pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML6402TR
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    -
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    65m Ω @ 3.7A, 4.5V
    1.2V @ 250μA
    633pF @ 10V
    3.7A Ta
    12nC @ 5V
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    HIGH RELIABILITY
    -
    3.7A
    -
    -
    -
    -
    YES
    R-PDSO-G3
    Not Qualified
    150°C
    SINGLE WITH BUILT-IN DIODE
    TO-236AB
    0.065Ohm
    22A
    20V
    11 mJ
    1.3W
  • IRLML5203
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -
    Tube
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    1.25W Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    3A
    -
    -
    -
    -
    YES
    R-PDSO-G3
    Not Qualified
    150°C
    SINGLE WITH BUILT-IN DIODE
    -
    0.098Ohm
    24A
    30V
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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