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IRLML6402TR

Infineon Technologies IRLML6402TR

Part Number:
IRLML6402TR
Manufacturer:
Infineon Technologies
Ventron No:
3071619-IRLML6402TR
Description:
MOSFET P-CH 20V 3.7A SOT-23
ECAD Model:
Datasheet:
IRLML6402TR

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  • IRLML6402TR Detail Images
Specifications
Infineon Technologies IRLML6402TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLML6402TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2003
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    65m Ω @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    633pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 5V
  • Drain to Source Voltage (Vdss)
    20V
  • JEDEC-95 Code
    TO-236AB
  • Drain Current-Max (Abs) (ID)
    3.7A
  • Drain-source On Resistance-Max
    0.065Ohm
  • Pulsed Drain Current-Max (IDM)
    22A
  • DS Breakdown Voltage-Min
    20V
  • Avalanche Energy Rating (Eas)
    11 mJ
  • Power Dissipation-Max (Abs)
    1.3W
  • RoHS Status
    Non-RoHS Compliant
Description
IRLML6402TR Description
International Rectifier's P-Channel MOSFETs use innovative processing techniques to provide extraordinarily low onresistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device design of HEXFET? power MOSFETs, gives the designer an extremely efficient and reliable device for battery and load control.

IRLML6402TR Features
Ultra Low On-Resistance
P-Channel MOSFET
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching

IRLML6402TR Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRLML6402TR More Descriptions
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R
MOSFET, P-CHANNEL, -20V, -3.7A, 65 MOHM, 8 NC QG, LOPower Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.7A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Leaded Process Compatible:No; Package/Case:Micro3 RoHS Compliant: No
IRLML6402TR Detail Images
Product Comparison
The three parts on the right have similar specifications to IRLML6402TR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Power Dissipation-Max (Abs)
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Operating Temperature
    Resistance
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Contact Plating
    Termination
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRLML6402TR
    IRLML6402TR
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    Cut Tape (CT)
    HEXFET®
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G3
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    65m Ω @ 3.7A, 4.5V
    1.2V @ 250μA
    633pF @ 10V
    3.7A Ta
    12nC @ 5V
    20V
    TO-236AB
    3.7A
    0.065Ohm
    22A
    20V
    11 mJ
    1.3W
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLML2502GTRPBF
    IRLML2502GTRPBF
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    45m Ω @ 4.2A, 4.5V
    1.2V @ 250μA
    740pF @ 15V
    4.2A Ta
    12nC @ 5V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    10 Weeks
    Surface Mount
    3
    -55°C~150°C TJ
    45MOhm
    1.25W Ta
    Single
    1.25W
    7.5 ns
    10ns
    2.5V 4.5V
    ±12V
    26 ns
    54 ns
    4.2A
    12V
    20V
    1.016mm
    3.0226mm
    1.397mm
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    IRLML6402TR vs IRLML2502GTRPBF
  • IRLML5203TRPBF
    IRLML5203TRPBF
    Infineon Technologies
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    2003
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    98m Ω @ 3A, 10V
    2.5V @ 250μA
    510pF @ 25V
    3A Ta
    14nC @ 10V
    30V
    -
    3A
    -
    24A
    -
    -
    -
    ROHS3 Compliant
    12 Weeks
    Surface Mount
    3
    -55°C~150°C TJ
    98MOhm
    1.25W Ta
    Single
    1.25W
    12 ns
    18ns
    4.5V 10V
    ±20V
    52 ns
    88 ns
    -3A
    20V
    -30V
    1.016mm
    3.0226mm
    3.05mm
    No
    Contains Lead
    Tin
    SMD/SMT
    -30V
    -3A
    -2.5V
    -30V
    -2.5 V
    No SVHC
    IRLML6402TR vs IRLML5203TRPBF
  • IRLMS5703TRPBF
    IRLMS5703TRPBF
    Infineon Technologies
    Surface Mount
    SOT-23-6
    -
    SILICON
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Not For New Designs
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    ULTRA LOW RESISTANCE
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    180m Ω @ 1.6A, 10V
    1V @ 250μA
    170pF @ 25V
    2.4A Ta
    11nC @ 10V
    30V
    -
    2.4A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    7 Weeks
    Surface Mount
    6
    -55°C~150°C TJ
    180mOhm
    1.7W Ta
    Single
    1.7W
    10 ns
    12ns
    4.5V 10V
    ±20V
    8.4 ns
    20 ns
    -2.3A
    20V
    -30V
    1.4478mm
    2.9972mm
    1.75mm
    No
    Lead Free
    -
    SMD/SMT
    -30V
    -2.3A
    -1V
    -30V
    -1 V
    No SVHC
    IRLML6402TR vs IRLMS5703TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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