Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFP3077PBF
IRFP3077PBF

Infineon Technologies IRFP3077PBF

Part Number:
IRFP3077PBF
Manufacturer:
Infineon Technologies
Ventron No:
2849008-IRFP3077PBF
Description:
MOSFET N-CH 75V 120A TO-247AC
ECAD Model:
Datasheet:
IRFP3077PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRFP3077PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP3077PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    3.3MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    340W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    340W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.3m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9400pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    220nC @ 10V
  • Rise Time
    76ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    77 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    120A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-247AC
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    200A
  • Drain to Source Breakdown Voltage
    75V
  • Pulsed Drain Current-Max (IDM)
    850A
  • Dual Supply Voltage
    75V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Recovery Time
    63 ns
  • Nominal Vgs
    4 V
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.3086mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFP3077PBF Description
The Infineon Technologies IRFP3077PBF is 75V Single N-Channel StrongIRFET? Power MOSFET in a TO-247 package.

IRFP3077PBF Features
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry-standard through-hole power package
High-current rating

IRFP3077PBF Applications
Battery powered applications
Power tools
DC motor drives
Light Electric Vehicles (LEV)
SMPS
IRFP3077PBF More Descriptions
IRFP3077PBF N-channel MOSFET Transistor, 160 A, 75 V, 3-Pin TO-247AC
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHSInfineon SCT
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:340W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:340W; Pulse Current Idm:850A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFP3077PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFP3077PBF
    IRFP3077PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2007
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    3.3MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    340W Tc
    Single
    ENHANCEMENT MODE
    340W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    3.3m Ω @ 75A, 10V
    4V @ 250μA
    9400pF @ 50V
    120A Tc
    220nC @ 10V
    76ns
    10V
    ±20V
    77 ns
    40 ns
    120A
    4V
    TO-247AC
    20V
    200A
    75V
    850A
    75V
    200 mJ
    63 ns
    4 V
    20.7mm
    15.87mm
    5.3086mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP150
    IRFP150
    Vishay Siliconix
    -
    -
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    230W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    55m Ω @ 25A, 10V
    4V @ 250μA
    2.8pF @ 25V
    41A Tc
    140nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    40A
    -
    160A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    e0
    no
    TIN LEAD
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    100V
    0.055Ohm
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFP3077PBF vs IRFP150
  • IRFP350LC
    IRFP350LC
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    190W Tc
    Single
    -
    190W
    -
    14 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2200pF @ 25V
    16A Tc
    76nC @ 10V
    54ns
    10V
    ±30V
    35 ns
    33 ns
    16A
    4V
    -
    30V
    -
    400V
    -
    -
    -
    -
    4 V
    20.7mm
    15.87mm
    5.31mm
    Unknown
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    400V
    -
    -
    TO-247-3
    38.000013g
    150°C
    -55°C
    1
    2.2nF
    300mOhm
    300 mΩ
    -
    -
    IRFP3077PBF vs IRFP350LC
  • IRFP350
    IRFP350
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2015
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    190W Tc
    Single
    -
    190W
    -
    16 ns
    N-Channel
    -
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    10V
    ±20V
    47 ns
    87 ns
    16A
    -
    -
    20V
    -
    400V
    -
    -
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    400V
    -
    -
    TO-247-3
    38.000013g
    150°C
    -55°C
    1
    2.6nF
    300mOhm
    300 mΩ
    400V
    16A
    IRFP3077PBF vs IRFP350
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRFP3077PBF
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.