IXYS IRFP250

Name: IRFP250
Brand: IXYS
SKU: 3586730-IRFP250
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP250

Manufacturer:: IXYS

Ventron No:: 3586730-IRFP250

Description:: MOSFET N-CH 200V 30A TO-247AD

ECAD Model:

Datasheet:: IRFP250 IRFP250

Specifications

IXYS IRFP250 technical specifications, attributes, parameters and parts with similar specifications to IXYS IRFP250.

Vgs(th) (Max) @ Id:
4V @ 250µA
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-247AD
Series:
-
Rds On (Max) @ Id, Vgs:
85 mOhm @ 18A, 10V
Power Dissipation (Max):
190W (Tc)
Packaging:
Tube
Package / Case:
TO-247-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
2970pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
140nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy IRFP250.

IRFP250 More Descriptions

Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Single-Gate MOSFET Transistors 200V Single N-Channel HEXFET
Trans MOSFET N-CH 200V 30A 3-Pin (3 Tab) TO-247AC
irfp250 power transistor module
MOSFET; Peak Reflow Compatible (260 C):No; Drain Source On Resistance @ 10V:85mohm; Thermal Resistance, Junction-Case:0.65°C/W; Continuous Drain Current - 100 Deg C:19A; Gate-To-Drain Charge:74nC; Leaded Process Compatible:No ;RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to IRFP250.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Mount

Number of Pins

Supplier Device Package

Weight

Published

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Voltage - Rated DC

Current Rating

Lead Free

View Compare
IRFP250

IXYS

4V @ 250µA

MOSFET (Metal Oxide)

TO-247AD

-

85 mOhm @ 18A, 10V

190W (Tc)

Tube

TO-247-3

-55°C ~ 150°C (TJ)

Through Hole

2970pF @ 25V

140nC @ 10V

N-Channel

-

200V

30A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP150

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-247-3

NO

SILICON

-55°C~175°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

230W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

55m Ω @ 25A, 10V

4V @ 250μA

2.8pF @ 25V

41A Tc

140nC @ 10V

100V

10V

±20V

40A

0.055Ohm

160A

100V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFP250 vs IRFP150
IRFP350LC

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

190W Tc

-

-

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2200pF @ 25V

16A Tc

76nC @ 10V

400V

10V

±30V

-

-

-

-

Non-RoHS Compliant

Through Hole

3

TO-247-3

38.000013g

2016

150°C

-55°C

1

Single

190W

14 ns

54ns

35 ns

33 ns

16A

4V

30V

400V

2.2nF

300mOhm

300 mΩ

4 V

20.7mm

15.87mm

5.31mm

Unknown

No

-

-

-

IRFP250 vs IRFP350LC
IRFP344PBF

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

150W Tc

-

-

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

450V

10V

±20V

-

-

-

-

ROHS3 Compliant

Through Hole

3

TO-247-3

38.000013g

1997

150°C

-55°C

1

Single

150W

8.7 ns

28ns

27 ns

58 ns

9.5A

4V

20V

450V

1.4nF

630mOhm

630 mΩ

-

20.7mm

15.87mm

5.31mm

Unknown

-

450V

9.5A

Lead Free

IRFP250 vs IRFP344PBF