Vishay Siliconix IRFP350
- Part Number:
- IRFP350
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851452-IRFP350
- Description:
- MOSFET N-CH 400V 16A TO-247AC
- Datasheet:
- IRFP350
Vishay Siliconix IRFP350 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP350.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Supplier Device PackageTO-247-3
- Weight38.000013g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating16A
- Number of Channels1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Power Dissipation190W
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs300mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time49ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)47 ns
- Turn-Off Delay Time87 ns
- Continuous Drain Current (ID)16A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance2.6nF
- Drain to Source Resistance300mOhm
- Rds On Max300 mΩ
- Height20.7mm
- Length15.87mm
- Width5.31mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFP350 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 87 ns.MOSFETs have 300mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP350 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 87 ns
single MOSFETs transistor is 300mOhm
a 400V drain to source voltage (Vdss)
IRFP350 Applications
There are a lot of Vishay Siliconix
IRFP350 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 87 ns.MOSFETs have 300mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFP350 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 87 ns
single MOSFETs transistor is 300mOhm
a 400V drain to source voltage (Vdss)
IRFP350 Applications
There are a lot of Vishay Siliconix
IRFP350 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP350 More Descriptions
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Single-Gate MOSFET Transistors 400V Sgl N-Channel HEXFET
N-CHANNEL POWER MOSFETS | MOSFET N-CH 400V 16A TO-247AC
IC,IRFP350,400V SINGLE N-CHANN EL HEXFET POWER MOSFET IN A T
DIODE GEN PURP 800V 15.9A TO220
Single-Gate MOSFET Transistors 400V Sgl N-Channel HEXFET
N-CHANNEL POWER MOSFETS | MOSFET N-CH 400V 16A TO-247AC
IC,IRFP350,400V SINGLE N-CHANN EL HEXFET POWER MOSFET IN A T
DIODE GEN PURP 800V 15.9A TO220
The three parts on the right have similar specifications to IRFP350.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageREACH SVHCView Compare
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IRFP350Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube2015Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)16A1190W TcSingle190W16 nsN-Channel300mOhm @ 9.6A, 10V4V @ 250μA2600pF @ 25V16A Tc150nC @ 10V49ns400V10V±20V47 ns87 ns16A20V400V2.6nF300mOhm300 mΩ20.7mm15.87mm5.31mmNon-RoHS CompliantContains Lead-----------------
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Through HoleThrough HoleTO-247-33-38.000013g-55°C~175°C TJTube2016Obsolete1 (Unlimited)--60VMOSFET (Metal Oxide)70A1230W TcSingle230W20 nsN-Channel14m Ω @ 54A, 10V4V @ 250μA4500pF @ 25V70A Tc160nC @ 10V160ns-10V±20V150 ns83 ns70A20V60V---20.7mm15.87mm5.31mmNon-RoHS CompliantContains LeadSILICONe0no3EAR99TIN LEADNOT SPECIFIEDNOT SPECIFIED3Not Qualified1ENHANCEMENT MODEDRAINSWITCHING--
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-Through HoleTO-3P-3, SC-65-3-TO-3P--55°C~150°C TJTube2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--205W Tc---N-Channel390mOhm @ 7A, 10V4V @ 250μA3800pF @ 25V14A Tc113nC @ 10V-500V10V±30V-----------------------------
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Through HoleThrough HoleTO-247-33TO-247-338.000013g-55°C~150°C TJTube1997Obsolete1 (Unlimited)150°C-55°C450VMOSFET (Metal Oxide)9.5A1150W TcSingle150W8.7 nsN-Channel630mOhm @ 5.7A, 10V4V @ 250μA1400pF @ 25V9.5A Tc80nC @ 10V28ns450V10V±20V27 ns58 ns9.5A20V450V1.4nF630mOhm630 mΩ20.7mm15.87mm5.31mmROHS3 CompliantLead Free--------------4VUnknown
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