IRFP350

Vishay Siliconix IRFP350

Part Number:
IRFP350
Manufacturer:
Vishay Siliconix
Ventron No:
2851452-IRFP350
Description:
MOSFET N-CH 400V 16A TO-247AC
ECAD Model:
Datasheet:
IRFP350

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Specifications
Vishay Siliconix IRFP350 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP350.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-247-3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    16A
  • Number of Channels
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Power Dissipation
    190W
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    300mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    150nC @ 10V
  • Rise Time
    49ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    47 ns
  • Turn-Off Delay Time
    87 ns
  • Continuous Drain Current (ID)
    16A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    2.6nF
  • Drain to Source Resistance
    300mOhm
  • Rds On Max
    300 mΩ
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFP350 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [16A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 87 ns.MOSFETs have 300mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFP350 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 87 ns
single MOSFETs transistor is 300mOhm
a 400V drain to source voltage (Vdss)


IRFP350 Applications
There are a lot of Vishay Siliconix
IRFP350 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFP350 More Descriptions
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Single-Gate MOSFET Transistors 400V Sgl N-Channel HEXFET
N-CHANNEL POWER MOSFETS | MOSFET N-CH 400V 16A TO-247AC
IC,IRFP350,400V SINGLE N-CHANN EL HEXFET POWER MOSFET IN A T
DIODE GEN PURP 800V 15.9A TO220
Product Comparison
The three parts on the right have similar specifications to IRFP350.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    REACH SVHC
    View Compare
  • IRFP350
    IRFP350
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    16A
    1
    190W Tc
    Single
    190W
    16 ns
    N-Channel
    300mOhm @ 9.6A, 10V
    4V @ 250μA
    2600pF @ 25V
    16A Tc
    150nC @ 10V
    49ns
    400V
    10V
    ±20V
    47 ns
    87 ns
    16A
    20V
    400V
    2.6nF
    300mOhm
    300 mΩ
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP054
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    38.000013g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    60V
    MOSFET (Metal Oxide)
    70A
    1
    230W Tc
    Single
    230W
    20 ns
    N-Channel
    14m Ω @ 54A, 10V
    4V @ 250μA
    4500pF @ 25V
    70A Tc
    160nC @ 10V
    160ns
    -
    10V
    ±20V
    150 ns
    83 ns
    70A
    20V
    60V
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    Non-RoHS Compliant
    Contains Lead
    SILICON
    e0
    no
    3
    EAR99
    TIN LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
  • IRFP450B
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    TO-3P
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    205W Tc
    -
    -
    -
    N-Channel
    390mOhm @ 7A, 10V
    4V @ 250μA
    3800pF @ 25V
    14A Tc
    113nC @ 10V
    -
    500V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFP344PBF
    Through Hole
    Through Hole
    TO-247-3
    3
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    450V
    MOSFET (Metal Oxide)
    9.5A
    1
    150W Tc
    Single
    150W
    8.7 ns
    N-Channel
    630mOhm @ 5.7A, 10V
    4V @ 250μA
    1400pF @ 25V
    9.5A Tc
    80nC @ 10V
    28ns
    450V
    10V
    ±20V
    27 ns
    58 ns
    9.5A
    20V
    450V
    1.4nF
    630mOhm
    630 mΩ
    20.7mm
    15.87mm
    5.31mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V
    Unknown
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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