Vishay Siliconix IRFP150

Name: IRFP150
Brand: Vishay Siliconix
SKU: 2853280-IRFP150
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP150

Manufacturer:: Vishay Siliconix

Ventron No:: 2853280-IRFP150

Description:: MOSFET N-CH 100V 41A TO-247AC

ECAD Model:

Datasheet:: IRFP150

Specifications

Vishay Siliconix IRFP150 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFP150.

Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
230W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.8pF @ 25V
Current - Continuous Drain (Id) @ 25°C
41A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
40A
Drain-source On Resistance-Max
0.055Ohm
Pulsed Drain Current-Max (IDM)
160A
DS Breakdown Voltage-Min
100V
RoHS Status
Non-RoHS Compliant

Description

IRFP150 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.8pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 40A.Pulsed drain current is maximum rated peak drain current 160A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFP150 Features
based on its rated peak drain current 160A.
a 100V drain to source voltage (Vdss)

IRFP150 Applications
There are a lot of Rochester Electronics, LLC
IRFP150 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IRFP150 More Descriptions

Tube Through Hole N-Channel Single Mosfet Transistor 41A Tc 41A 230W 81ns
Transistor NPN IRFP150 INTERNATIONAL RECTIFIER Ampere=40 Volt=100 TO218Halfin
Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Product Comparison

The three parts on the right have similar specifications to IRFP150.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Supplier Device Package

Published

Mount

Number of Pins

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Lead Free

View Compare
IRFP150

Vishay Siliconix

Through Hole

TO-247-3

NO

SILICON

-55°C~175°C TJ

Tube

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

230W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

55m Ω @ 25A, 10V

4V @ 250μA

2.8pF @ 25V

41A Tc

140nC @ 10V

100V

10V

±20V

40A

0.055Ohm

160A

100V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFP450B

Fairchild/ON Semiconductor

Through Hole

TO-3P-3, SC-65-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

205W Tc

-

-

N-Channel

-

390mOhm @ 7A, 10V

4V @ 250μA

3800pF @ 25V

14A Tc

113nC @ 10V

500V

10V

±30V

-

-

-

-

-

TO-3P

2001

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFP150 vs IRFP450B
IRFP344PBF

Vishay Siliconix

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

150W Tc

-

-

N-Channel

-

630mOhm @ 5.7A, 10V

4V @ 250μA

1400pF @ 25V

9.5A Tc

80nC @ 10V

450V

10V

±20V

-

-

-

-

ROHS3 Compliant

TO-247-3

1997

Through Hole

3

38.000013g

150°C

-55°C

450V

9.5A

1

Single

150W

8.7 ns

28ns

27 ns

58 ns

9.5A

4V

20V

450V

1.4nF

630mOhm

630 mΩ

20.7mm

15.87mm

5.31mm

Unknown

Lead Free

IRFP150 vs IRFP344PBF
IRFP350

Vishay Siliconix

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

190W Tc

-

-

N-Channel

-

300mOhm @ 9.6A, 10V

4V @ 250μA

2600pF @ 25V

16A Tc

150nC @ 10V

400V

10V

±20V

-

-

-

-

Non-RoHS Compliant

TO-247-3

2015

Through Hole

3

38.000013g

150°C

-55°C

400V

16A

1

Single

190W

16 ns

49ns

47 ns

87 ns

16A

-

20V

400V

2.6nF

300mOhm

300 mΩ

20.7mm

15.87mm

5.31mm

-

Contains Lead

IRFP150 vs IRFP350