IRFD9024PBF

Vishay Siliconix IRFD9024PBF

Part Number:
IRFD9024PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479836-IRFD9024PBF
Description:
MOSFET P-CH 60V 1.6A 4-DIP
ECAD Model:
Datasheet:
IRFD9024PBF

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Specifications
Vishay Siliconix IRFD9024PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9024PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    280mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -1.6A
  • Number of Elements
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 960mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    68ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    68 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    -1.6A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    570pF
  • Recovery Time
    200 ns
  • Drain to Source Resistance
    280mOhm
  • Rds On Max
    280 mΩ
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFD9024PBF Overview
The maximum input capacitance of this device is 570pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1.6A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 280mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFD9024PBF Features
a continuous drain current (ID) of -1.6A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)


IRFD9024PBF Applications
There are a lot of Vishay Siliconix
IRFD9024PBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFD9024PBF More Descriptions
Single P-Channel 60 V 0.28 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET P-CH 60V 1.6A 4-DIP | Siliconix / Vishay IRFD9024PBF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.6A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:HD-1 ;RoHS Compliant: Yes
MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:-1.6A; Current Temperature:25°C; Device Marking:IRFD9024PBF; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:13A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
Product Comparison
The three parts on the right have similar specifications to IRFD9024PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Terminal Position
    Pin Count
    Operating Mode
    Case Connection
    Transistor Application
    Number of Channels
    View Compare
  • IRFD9024PBF
    IRFD9024PBF
    8 Weeks
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    280mOhm
    175°C
    -55°C
    -60V
    MOSFET (Metal Oxide)
    -1.6A
    1
    1.3W Ta
    Single
    1.3W
    13 ns
    P-Channel
    280mOhm @ 960mA, 10V
    4V @ 250μA
    570pF @ 25V
    1.6A Ta
    19nC @ 10V
    68ns
    60V
    10V
    ±20V
    68 ns
    15 ns
    -1.6A
    -4V
    20V
    60V
    570pF
    200 ns
    280mOhm
    280 mΩ
    3.37mm
    5mm
    6.29mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9220PBF
    8 Weeks
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    1.5Ohm
    150°C
    -55°C
    -200V
    MOSFET (Metal Oxide)
    -560mA
    1
    1W Ta
    Single
    1W
    8.8 ns
    P-Channel
    1.5Ohm @ 340mA, 10V
    4V @ 250μA
    340pF @ 25V
    560mA Ta
    15nC @ 10V
    27ns
    200V
    10V
    ±20V
    19 ns
    7.3 ns
    -560mA
    -4V
    20V
    200V
    340pF
    -
    1.5Ohm
    1.5 Ω
    3.37mm
    6.29mm
    5mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD120PBF
    8 Weeks
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    -
    -55°C~175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    270mOhm
    -
    -
    100V
    MOSFET (Metal Oxide)
    1.3A
    1
    1.3W Ta
    Single
    1.3W
    6.8 ns
    N-Channel
    270m Ω @ 780mA, 10V
    4V @ 250μA
    360pF @ 25V
    1.3A Ta
    16nC @ 10V
    27ns
    -
    10V
    ±20V
    27 ns
    18 ns
    1.3A
    4V
    20V
    100V
    -
    260 ns
    -
    -
    3.37mm
    5mm
    6.29mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    yes
    4
    EAR99
    AVALANCHE RATED
    FET General Purpose Powers
    DUAL
    4
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
  • IRFD310
    -
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1W Ta
    -
    -
    8 ns
    N-Channel
    3.6Ohm @ 210mA, 10V
    4V @ 250μA
    170pF @ 25V
    350mA Ta
    17nC @ 10V
    9.9ns
    400V
    10V
    ±20V
    9.9 ns
    21 ns
    350mA
    -
    20V
    -
    170pF
    -
    3.6Ohm
    3.6 Ω
    3.37mm
    5mm
    6.29mm
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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