Vishay Siliconix IRFD9024PBF
- Part Number:
- IRFD9024PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479836-IRFD9024PBF
- Description:
- MOSFET P-CH 60V 1.6A 4-DIP
- Datasheet:
- IRFD9024PBF
Vishay Siliconix IRFD9024PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9024PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance280mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-1.6A
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Power Dissipation1.3W
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time68ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)68 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)-1.6A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance570pF
- Recovery Time200 ns
- Drain to Source Resistance280mOhm
- Rds On Max280 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFD9024PBF Overview
The maximum input capacitance of this device is 570pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1.6A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 280mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD9024PBF Features
a continuous drain current (ID) of -1.6A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
IRFD9024PBF Applications
There are a lot of Vishay Siliconix
IRFD9024PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 570pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1.6A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 280mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD9024PBF Features
a continuous drain current (ID) of -1.6A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
IRFD9024PBF Applications
There are a lot of Vishay Siliconix
IRFD9024PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFD9024PBF More Descriptions
Single P-Channel 60 V 0.28 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET P-CH 60V 1.6A 4-DIP | Siliconix / Vishay IRFD9024PBF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.6A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:HD-1 ;RoHS Compliant: Yes
MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:-1.6A; Current Temperature:25°C; Device Marking:IRFD9024PBF; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:13A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
MOSFET P-CH 60V 1.6A 4-DIP | Siliconix / Vishay IRFD9024PBF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.6A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:HD-1 ;RoHS Compliant: Yes
MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:-1.6A; Current Temperature:25°C; Device Marking:IRFD9024PBF; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:13A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to IRFD9024PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionPin CountOperating ModeCase ConnectionTransistor ApplicationNumber of ChannelsView Compare
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IRFD9024PBF8 WeeksThrough HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2011Active1 (Unlimited)280mOhm175°C-55°C-60VMOSFET (Metal Oxide)-1.6A11.3W TaSingle1.3W13 nsP-Channel280mOhm @ 960mA, 10V4V @ 250μA570pF @ 25V1.6A Ta19nC @ 10V68ns60V10V±20V68 ns15 ns-1.6A-4V20V60V570pF200 ns280mOhm280 mΩ3.37mm5mm6.29mmNo SVHCNoROHS3 CompliantLead Free-------------
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8 WeeksThrough HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2008Active1 (Unlimited)1.5Ohm150°C-55°C-200VMOSFET (Metal Oxide)-560mA11W TaSingle1W8.8 nsP-Channel1.5Ohm @ 340mA, 10V4V @ 250μA340pF @ 25V560mA Ta15nC @ 10V27ns200V10V±20V19 ns7.3 ns-560mA-4V20V200V340pF-1.5Ohm1.5 Ω3.37mm6.29mm5mmUnknownNoROHS3 CompliantLead Free------------
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8 WeeksThrough HoleThrough Hole4-DIP (0.300, 7.62mm)4--55°C~175°C TJTube2011Active1 (Unlimited)270mOhm--100VMOSFET (Metal Oxide)1.3A11.3W TaSingle1.3W6.8 nsN-Channel270m Ω @ 780mA, 10V4V @ 250μA360pF @ 25V1.3A Ta16nC @ 10V27ns-10V±20V27 ns18 ns1.3A4V20V100V-260 ns--3.37mm5mm6.29mmUnknownNoROHS3 CompliantLead FreeSILICONyes4EAR99AVALANCHE RATEDFET General Purpose PowersDUAL4ENHANCEMENT MODEDRAINSWITCHING-
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-Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)--1W Ta--8 nsN-Channel3.6Ohm @ 210mA, 10V4V @ 250μA170pF @ 25V350mA Ta17nC @ 10V9.9ns400V10V±20V9.9 ns21 ns350mA-20V-170pF-3.6Ohm3.6 Ω3.37mm5mm6.29mm-NoNon-RoHS Compliant------------1
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