IRFD9014

Vishay Siliconix IRFD9014

Part Number:
IRFD9014
Manufacturer:
Vishay Siliconix
Ventron No:
2853268-IRFD9014
Description:
MOSFET P-CH 60V 1.1A 4-DIP
ECAD Model:
Datasheet:
IRFD9014

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Specifications
Vishay Siliconix IRFD9014 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9014.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -1.1A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    500mOhm @ 660mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    270pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Rise Time
    63ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    63 ns
  • Turn-Off Delay Time
    10 ns
  • Continuous Drain Current (ID)
    -1.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Input Capacitance
    270pF
  • Drain to Source Resistance
    500mOhm
  • Rds On Max
    500 mΩ
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFD9014 Overview
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -1.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-60V, and this device has a drain-to-source breakdown voltage of -60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 500mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFD9014 Features
a continuous drain current (ID) of -1.1A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)


IRFD9014 Applications
There are a lot of Vishay Siliconix
IRFD9014 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFD9014 More Descriptions
IR# IRFD9014 TRANS MOSFET P-CH 60V 1.1A 3HEXPDIP M OS
Transistor PNP IRFD9014 INTERNATIONAL RECTIFIER Ampere=1.1 Volt=60 N4Halfin
P CHANNEL MOSFET, -60V, 1.1A, HD-1
Product Comparison
The three parts on the right have similar specifications to IRFD9014.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Factory Lead Time
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Terminal Position
    Pin Count
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    Recovery Time
    REACH SVHC
    Radiation Hardening
    View Compare
  • IRFD9014
    IRFD9014
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -60V
    MOSFET (Metal Oxide)
    -1.1A
    1
    1
    1.3W Ta
    1.3W
    11 ns
    P-Channel
    500mOhm @ 660mA, 10V
    4V @ 250μA
    270pF @ 25V
    1.1A Ta
    12nC @ 10V
    63ns
    60V
    10V
    ±20V
    63 ns
    10 ns
    -1.1A
    20V
    -60V
    270pF
    500mOhm
    500 mΩ
    3.37mm
    5mm
    6.29mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9110
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -100V
    MOSFET (Metal Oxide)
    -700mA
    1
    1
    1.3W Ta
    1.3W
    9.6 ns
    P-Channel
    1.2Ohm @ 420mA, 10V
    4V @ 250μA
    200pF @ 25V
    700mA Ta
    8.7nC @ 10V
    29ns
    100V
    10V
    ±20V
    29 ns
    21 ns
    1A
    20V
    -100V
    200pF
    1.2Ohm
    1.2 Ω
    3.37mm
    5mm
    6.29mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD120PBF
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    -
    -55°C~175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    -
    -
    100V
    MOSFET (Metal Oxide)
    1.3A
    1
    -
    1.3W Ta
    1.3W
    6.8 ns
    N-Channel
    270m Ω @ 780mA, 10V
    4V @ 250μA
    360pF @ 25V
    1.3A Ta
    16nC @ 10V
    27ns
    -
    10V
    ±20V
    27 ns
    18 ns
    1.3A
    20V
    100V
    -
    -
    -
    3.37mm
    5mm
    6.29mm
    ROHS3 Compliant
    Lead Free
    8 Weeks
    SILICON
    yes
    4
    EAR99
    270mOhm
    AVALANCHE RATED
    FET General Purpose Powers
    DUAL
    4
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    4V
    260 ns
    Unknown
    No
  • IRFD310
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    1W Ta
    -
    8 ns
    N-Channel
    3.6Ohm @ 210mA, 10V
    4V @ 250μA
    170pF @ 25V
    350mA Ta
    17nC @ 10V
    9.9ns
    400V
    10V
    ±20V
    9.9 ns
    21 ns
    350mA
    20V
    -
    170pF
    3.6Ohm
    3.6 Ω
    3.37mm
    5mm
    6.29mm
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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