Vishay Siliconix IRFD9014
- Part Number:
- IRFD9014
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853268-IRFD9014
- Description:
- MOSFET P-CH 60V 1.1A 4-DIP
- Datasheet:
- IRFD9014
Vishay Siliconix IRFD9014 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9014.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-1.1A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 660mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.1A Ta
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time63ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)63 ns
- Turn-Off Delay Time10 ns
- Continuous Drain Current (ID)-1.1A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Input Capacitance270pF
- Drain to Source Resistance500mOhm
- Rds On Max500 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFD9014 Overview
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -1.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-60V, and this device has a drain-to-source breakdown voltage of -60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 500mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFD9014 Features
a continuous drain current (ID) of -1.1A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)
IRFD9014 Applications
There are a lot of Vishay Siliconix
IRFD9014 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -1.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-60V, and this device has a drain-to-source breakdown voltage of -60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 500mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFD9014 Features
a continuous drain current (ID) of -1.1A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 500mOhm
a 60V drain to source voltage (Vdss)
IRFD9014 Applications
There are a lot of Vishay Siliconix
IRFD9014 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFD9014 More Descriptions
IR# IRFD9014 TRANS MOSFET P-CH 60V 1.1A 3HEXPDIP M OS
Transistor PNP IRFD9014 INTERNATIONAL RECTIFIER Ampere=1.1 Volt=60 N4Halfin
P CHANNEL MOSFET, -60V, 1.1A, HD-1
Transistor PNP IRFD9014 INTERNATIONAL RECTIFIER Ampere=1.1 Volt=60 N4Halfin
P CHANNEL MOSFET, -60V, 1.1A, HD-1
The three parts on the right have similar specifications to IRFD9014.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeFactory Lead TimeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTerminal PositionPin CountElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageRecovery TimeREACH SVHCRadiation HardeningView Compare
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IRFD9014Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2012Obsolete1 (Unlimited)175°C-55°C-60VMOSFET (Metal Oxide)-1.1A111.3W Ta1.3W11 nsP-Channel500mOhm @ 660mA, 10V4V @ 250μA270pF @ 25V1.1A Ta12nC @ 10V63ns60V10V±20V63 ns10 ns-1.1A20V-60V270pF500mOhm500 mΩ3.37mm5mm6.29mmNon-RoHS CompliantContains Lead-------------------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C-100VMOSFET (Metal Oxide)-700mA111.3W Ta1.3W9.6 nsP-Channel1.2Ohm @ 420mA, 10V4V @ 250μA200pF @ 25V700mA Ta8.7nC @ 10V29ns100V10V±20V29 ns21 ns1A20V-100V200pF1.2Ohm1.2 Ω3.37mm5mm6.29mmNon-RoHS CompliantContains Lead------------------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)4--55°C~175°C TJTube2011Active1 (Unlimited)--100VMOSFET (Metal Oxide)1.3A1-1.3W Ta1.3W6.8 nsN-Channel270m Ω @ 780mA, 10V4V @ 250μA360pF @ 25V1.3A Ta16nC @ 10V27ns-10V±20V27 ns18 ns1.3A20V100V---3.37mm5mm6.29mmROHS3 CompliantLead Free8 WeeksSILICONyes4EAR99270mOhmAVALANCHE RATEDFET General Purpose PowersDUAL4SingleENHANCEMENT MODEDRAINSWITCHING4V260 nsUnknownNo
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)--11W Ta-8 nsN-Channel3.6Ohm @ 210mA, 10V4V @ 250μA170pF @ 25V350mA Ta17nC @ 10V9.9ns400V10V±20V9.9 ns21 ns350mA20V-170pF3.6Ohm3.6 Ω3.37mm5mm6.29mmNon-RoHS Compliant------------------No
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