IRFD024

Vishay Siliconix IRFD024

Part Number:
IRFD024
Manufacturer:
Vishay Siliconix
Ventron No:
3070828-IRFD024
Description:
MOSFET N-CH 60V 2.5A 4-DIP
ECAD Model:
Datasheet:
IRFD024

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Specifications
Vishay Siliconix IRFD024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD024.
  • Factory Lead Time
    13 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2017
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    2.5A
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Rise Time
    58ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    58 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    2.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    640pF
  • Drain to Source Resistance
    100mOhm
  • Rds On Max
    100 mΩ
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFD024 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 640pF @ 25V.This device has a continuous drain current (ID) of [2.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFD024 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)


IRFD024 Applications
There are a lot of Vishay Siliconix
IRFD024 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFD024 More Descriptions
Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
Transistor NPN IRFD024 INTERNATIONAL RECTIFIER Ampere=2.5 Volt=60 N4Halfin
IC COMPARATOR SGL W/REF 8-SOIC
MOSFET, N DIL; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:2.5A; Resistance, Rds On:0.1ohm; Case Style:DIP; Termination Type:Through Hole; Current, Idm Pulse:19A; Lead Spacing:2.54mm; No. of Pins:4; Power Dissipation:1.3W; Power, Pd:1.3W; Row Pitch:7.62mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V
Product Comparison
The three parts on the right have similar specifications to IRFD024.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Terminal Position
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRFD024
    IRFD024
    13 Weeks
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    2.5A
    1
    1.3W Ta
    1.3W
    13 ns
    N-Channel
    100mOhm @ 1.5A, 10V
    4V @ 250μA
    640pF @ 25V
    2.5A Ta
    25nC @ 10V
    58ns
    60V
    10V
    ±20V
    58 ns
    25 ns
    2.5A
    20V
    60V
    640pF
    100mOhm
    100 mΩ
    3.37mm
    5mm
    6.29mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9110PBF
    8 Weeks
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    -
    -55°C~175°C TJ
    Tube
    2004
    Active
    1 (Unlimited)
    -
    -
    -100V
    MOSFET (Metal Oxide)
    -700mA
    -
    1.3W Ta
    1.3W
    10 ns
    P-Channel
    1.2 Ω @ 420mA, 10V
    4V @ 250μA
    200pF @ 25V
    700mA Ta
    8.7nC @ 10V
    27ns
    -
    10V
    ±20V
    27 ns
    15 ns
    -700mA
    20V
    100V
    -
    -
    -
    3.3782mm
    6.2738mm
    5.0038mm
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    yes
    3
    EAR99
    1.2Ohm
    AVALANCHE RATED
    Other Transistors
    DUAL
    3
    R-PDIP-T3
    1
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -4V
    0.7A
    5.6A
    -4 V
    Unknown
  • IRFD310
    -
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    1W Ta
    -
    8 ns
    N-Channel
    3.6Ohm @ 210mA, 10V
    4V @ 250μA
    170pF @ 25V
    350mA Ta
    17nC @ 10V
    9.9ns
    400V
    10V
    ±20V
    9.9 ns
    21 ns
    350mA
    20V
    -
    170pF
    3.6Ohm
    3.6 Ω
    3.37mm
    5mm
    6.29mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9014
    -
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -60V
    MOSFET (Metal Oxide)
    -1.1A
    1
    1.3W Ta
    1.3W
    11 ns
    P-Channel
    500mOhm @ 660mA, 10V
    4V @ 250μA
    270pF @ 25V
    1.1A Ta
    12nC @ 10V
    63ns
    60V
    10V
    ±20V
    63 ns
    10 ns
    -1.1A
    20V
    -60V
    270pF
    500mOhm
    500 mΩ
    3.37mm
    5mm
    6.29mm
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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