Vishay Siliconix IRFD024
- Part Number:
- IRFD024
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070828-IRFD024
- Description:
- MOSFET N-CH 60V 2.5A 4-DIP
- Datasheet:
- IRFD024
Vishay Siliconix IRFD024 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD024.
- Factory Lead Time13 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2017
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2.5A
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.5A Ta
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time58ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)58 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)2.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance640pF
- Drain to Source Resistance100mOhm
- Rds On Max100 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFD024 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 640pF @ 25V.This device has a continuous drain current (ID) of [2.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFD024 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRFD024 Applications
There are a lot of Vishay Siliconix
IRFD024 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 640pF @ 25V.This device has a continuous drain current (ID) of [2.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFD024 Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)
IRFD024 Applications
There are a lot of Vishay Siliconix
IRFD024 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFD024 More Descriptions
Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
Transistor NPN IRFD024 INTERNATIONAL RECTIFIER Ampere=2.5 Volt=60 N4Halfin
IC COMPARATOR SGL W/REF 8-SOIC
MOSFET, N DIL; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:2.5A; Resistance, Rds On:0.1ohm; Case Style:DIP; Termination Type:Through Hole; Current, Idm Pulse:19A; Lead Spacing:2.54mm; No. of Pins:4; Power Dissipation:1.3W; Power, Pd:1.3W; Row Pitch:7.62mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V
Transistor NPN IRFD024 INTERNATIONAL RECTIFIER Ampere=2.5 Volt=60 N4Halfin
IC COMPARATOR SGL W/REF 8-SOIC
MOSFET, N DIL; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:2.5A; Resistance, Rds On:0.1ohm; Case Style:DIP; Termination Type:Through Hole; Current, Idm Pulse:19A; Lead Spacing:2.54mm; No. of Pins:4; Power Dissipation:1.3W; Power, Pd:1.3W; Row Pitch:7.62mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V
The three parts on the right have similar specifications to IRFD024.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTerminal PositionPin CountJESD-30 CodeNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Nominal VgsREACH SVHCView Compare
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IRFD02413 WeeksThrough HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2017Active1 (Unlimited)150°C-55°C60VMOSFET (Metal Oxide)2.5A11.3W Ta1.3W13 nsN-Channel100mOhm @ 1.5A, 10V4V @ 250μA640pF @ 25V2.5A Ta25nC @ 10V58ns60V10V±20V58 ns25 ns2.5A20V60V640pF100mOhm100 mΩ3.37mm5mm6.29mmNoNon-RoHS CompliantContains Lead---------------------
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8 WeeksThrough HoleThrough Hole4-DIP (0.300, 7.62mm)4--55°C~175°C TJTube2004Active1 (Unlimited)---100VMOSFET (Metal Oxide)-700mA-1.3W Ta1.3W10 nsP-Channel1.2 Ω @ 420mA, 10V4V @ 250μA200pF @ 25V700mA Ta8.7nC @ 10V27ns-10V±20V27 ns15 ns-700mA20V100V---3.3782mm6.2738mm5.0038mmNoROHS3 CompliantLead FreeSILICONyes3EAR991.2OhmAVALANCHE RATEDOther TransistorsDUAL3R-PDIP-T31SingleENHANCEMENT MODEDRAINSWITCHING-4V0.7A5.6A-4 VUnknown
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-Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)-11W Ta-8 nsN-Channel3.6Ohm @ 210mA, 10V4V @ 250μA170pF @ 25V350mA Ta17nC @ 10V9.9ns400V10V±20V9.9 ns21 ns350mA20V-170pF3.6Ohm3.6 Ω3.37mm5mm6.29mmNoNon-RoHS Compliant---------------------
-
-Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2012Obsolete1 (Unlimited)175°C-55°C-60VMOSFET (Metal Oxide)-1.1A11.3W Ta1.3W11 nsP-Channel500mOhm @ 660mA, 10V4V @ 250μA270pF @ 25V1.1A Ta12nC @ 10V63ns60V10V±20V63 ns10 ns-1.1A20V-60V270pF500mOhm500 mΩ3.37mm5mm6.29mm-Non-RoHS CompliantContains Lead----------1---------
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