IRFD9020

Vishay Siliconix IRFD9020

Part Number:
IRFD9020
Manufacturer:
Vishay Siliconix
Ventron No:
3071472-IRFD9020
Description:
MOSFET P-CH 60V 1.6A 4-DIP
ECAD Model:
Datasheet:
IRFD9020

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Specifications
Vishay Siliconix IRFD9020 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9020.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2017
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -50V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -1.6A
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 960mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    68ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    68 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    1.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    570pF
  • Drain to Source Resistance
    280mOhm
  • Rds On Max
    280 mΩ
  • Height
    3.37mm
  • Length
    5mm
  • Width
    6.29mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFD9020 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 570pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 280mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFD9020 Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)


IRFD9020 Applications
There are a lot of Vishay Siliconix
IRFD9020 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFD9020 More Descriptions
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
60V 1.600A HEXDIP OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IRFD9020.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Number of Elements
    Power Dissipation
    Drain to Source Breakdown Voltage
    Factory Lead Time
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Terminal Position
    Pin Count
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    Recovery Time
    REACH SVHC
    View Compare
  • IRFD9020
    IRFD9020
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2017
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -50V
    MOSFET (Metal Oxide)
    -1.6A
    1
    1.3W Ta
    13 ns
    P-Channel
    280mOhm @ 960mA, 10V
    4V @ 1μA
    570pF @ 25V
    1.6A Ta
    19nC @ 10V
    68ns
    60V
    10V
    ±20V
    68 ns
    15 ns
    1.6A
    20V
    570pF
    280mOhm
    280 mΩ
    3.37mm
    5mm
    6.29mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD9110
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -100V
    MOSFET (Metal Oxide)
    -700mA
    1
    1.3W Ta
    9.6 ns
    P-Channel
    1.2Ohm @ 420mA, 10V
    4V @ 250μA
    200pF @ 25V
    700mA Ta
    8.7nC @ 10V
    29ns
    100V
    10V
    ±20V
    29 ns
    21 ns
    1A
    20V
    200pF
    1.2Ohm
    1.2 Ω
    3.37mm
    5mm
    6.29mm
    -
    Non-RoHS Compliant
    Contains Lead
    1
    1.3W
    -100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFD120PBF
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    -
    -55°C~175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    -
    -
    100V
    MOSFET (Metal Oxide)
    1.3A
    -
    1.3W Ta
    6.8 ns
    N-Channel
    270m Ω @ 780mA, 10V
    4V @ 250μA
    360pF @ 25V
    1.3A Ta
    16nC @ 10V
    27ns
    -
    10V
    ±20V
    27 ns
    18 ns
    1.3A
    20V
    -
    -
    -
    3.37mm
    5mm
    6.29mm
    No
    ROHS3 Compliant
    Lead Free
    1
    1.3W
    100V
    8 Weeks
    SILICON
    yes
    4
    EAR99
    270mOhm
    AVALANCHE RATED
    FET General Purpose Powers
    DUAL
    4
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    4V
    260 ns
    Unknown
  • IRFD420
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    4-DIP, Hexdip, HVMDIP
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    460mA
    1
    1W Ta
    8 ns
    N-Channel
    3Ohm @ 220mA, 10V
    4V @ 250μA
    360pF @ 25V
    370mA Ta
    24nC @ 10V
    8.6ns
    500V
    10V
    ±20V
    8.6 ns
    33 ns
    370mA
    20V
    360pF
    3Ohm
    3 Ω
    3.37mm
    5mm
    6.29mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    1.3W
    500V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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