Vishay Siliconix IRFD9020
- Part Number:
- IRFD9020
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071472-IRFD9020
- Description:
- MOSFET P-CH 60V 1.6A 4-DIP
- Datasheet:
- IRFD9020
Vishay Siliconix IRFD9020 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9020.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2017
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-50V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-1.6A
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id4V @ 1μA
- Input Capacitance (Ciss) (Max) @ Vds570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time68ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)68 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)1.6A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance570pF
- Drain to Source Resistance280mOhm
- Rds On Max280 mΩ
- Height3.37mm
- Length5mm
- Width6.29mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFD9020 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 570pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 280mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFD9020 Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRFD9020 Applications
There are a lot of Vishay Siliconix
IRFD9020 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 570pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 280mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFD9020 Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRFD9020 Applications
There are a lot of Vishay Siliconix
IRFD9020 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFD9020 More Descriptions
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
60V 1.600A HEXDIPOEMs, CMs ONLY (NO BROKERS)
60V 1.600A HEXDIP
The three parts on the right have similar specifications to IRFD9020.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeNumber of ElementsPower DissipationDrain to Source Breakdown VoltageFactory Lead TimeTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTerminal PositionPin CountElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageRecovery TimeREACH SVHCView Compare
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IRFD9020Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2017Obsolete1 (Unlimited)150°C-55°C-50VMOSFET (Metal Oxide)-1.6A11.3W Ta13 nsP-Channel280mOhm @ 960mA, 10V4V @ 1μA570pF @ 25V1.6A Ta19nC @ 10V68ns60V10V±20V68 ns15 ns1.6A20V570pF280mOhm280 mΩ3.37mm5mm6.29mmNoNon-RoHS CompliantContains Lead---------------------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C-100VMOSFET (Metal Oxide)-700mA11.3W Ta9.6 nsP-Channel1.2Ohm @ 420mA, 10V4V @ 250μA200pF @ 25V700mA Ta8.7nC @ 10V29ns100V10V±20V29 ns21 ns1A20V200pF1.2Ohm1.2 Ω3.37mm5mm6.29mm-Non-RoHS CompliantContains Lead11.3W-100V-----------------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)4--55°C~175°C TJTube2011Active1 (Unlimited)--100VMOSFET (Metal Oxide)1.3A-1.3W Ta6.8 nsN-Channel270m Ω @ 780mA, 10V4V @ 250μA360pF @ 25V1.3A Ta16nC @ 10V27ns-10V±20V27 ns18 ns1.3A20V---3.37mm5mm6.29mmNoROHS3 CompliantLead Free11.3W100V8 WeeksSILICONyes4EAR99270mOhmAVALANCHE RATEDFET General Purpose PowersDUAL4SingleENHANCEMENT MODEDRAINSWITCHING4V260 nsUnknown
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Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)460mA11W Ta8 nsN-Channel3Ohm @ 220mA, 10V4V @ 250μA360pF @ 25V370mA Ta24nC @ 10V8.6ns500V10V±20V8.6 ns33 ns370mA20V360pF3Ohm3 Ω3.37mm5mm6.29mmNoNon-RoHS CompliantContains Lead-1.3W500V-----------------
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