Vishay Siliconix IRFD120
- Part Number:
- IRFD120
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586412-IRFD120
- Description:
- MOSFET N-CH 100V 1.3A 4-DIP
- Datasheet:
- IRFD120
Vishay Siliconix IRFD120 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD120.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Current Rating1.3A
- Lead Pitch2.54mm
- Number of Elements1
- Row Spacing7.62 mm
- Power Dissipation-Max1.3W Ta
- Power Dissipation1.3W
- Turn On Delay Time6.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 780mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)1.3A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Input Capacitance360pF
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRFD120 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device has a continuous drain current (ID) of [1.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.MOSFETs have 270mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFD120 Features
a continuous drain current (ID) of 1.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFD120 Applications
There are a lot of Vishay Siliconix
IRFD120 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device has a continuous drain current (ID) of [1.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 18 ns.MOSFETs have 270mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFD120 Features
a continuous drain current (ID) of 1.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRFD120 Applications
There are a lot of Vishay Siliconix
IRFD120 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFD120 More Descriptions
Transistor NPN IRFD120 INTERNATIONAL RECTIFIER Ampere=1.3 Volt=100 N4Halfin
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFD120.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationMax Operating TemperatureMin Operating TemperatureTechnologyCurrent RatingLead PitchNumber of ElementsRow SpacingPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningRoHS StatusNumber of ChannelsHeightLengthWidthVoltage - Rated DCLead FreeView Compare
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IRFD120Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2015Obsolete1 (Unlimited)Through Hole175°C-55°CMOSFET (Metal Oxide)1.3A2.54mm17.62 mm1.3W Ta1.3W6.8 nsN-Channel270mOhm @ 780mA, 10V4V @ 250μA360pF @ 25V1.3A Ta16nC @ 10V27ns100V10V±20V27 ns18 ns1.3A20V100V360pF270mOhm270 mΩNoNon-RoHS Compliant-------
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)----1W Ta-8 nsN-Channel3.6Ohm @ 210mA, 10V4V @ 250μA170pF @ 25V350mA Ta17nC @ 10V9.9ns400V10V±20V9.9 ns21 ns350mA20V-170pF3.6Ohm3.6 ΩNoNon-RoHS Compliant13.37mm5mm6.29mm--
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)460mA---1W Ta1.3W8 nsN-Channel3Ohm @ 220mA, 10V4V @ 250μA360pF @ 25V370mA Ta24nC @ 10V8.6ns500V10V±20V8.6 ns33 ns370mA20V500V360pF3Ohm3 ΩNoNon-RoHS Compliant13.37mm5mm6.29mm500VContains Lead
-
Through HoleThrough Hole4-DIP (0.300, 7.62mm)44-DIP, Hexdip, HVMDIP-55°C~175°C TJTube2012Obsolete1 (Unlimited)-175°C-55°CMOSFET (Metal Oxide)-1.1A-1-1.3W Ta1.3W11 nsP-Channel500mOhm @ 660mA, 10V4V @ 250μA270pF @ 25V1.1A Ta12nC @ 10V63ns60V10V±20V63 ns10 ns-1.1A20V-60V270pF500mOhm500 mΩ-Non-RoHS Compliant13.37mm5mm6.29mm-60VContains Lead
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