Infineon Technologies IRF3717TRPBF
- Part Number:
- IRF3717TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479594-IRF3717TRPBF
- Description:
- MOSFET N-CH 20V 20A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF3717PbF
Infineon Technologies IRF3717TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3717TRPBF.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Additional FeatureGREEN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.4m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.45V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2890pF @ 10V
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Gate Charge (Qg) (Max) @ Vgs33nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)20A
- Drain-source On Resistance-Max0.0044Ohm
- Pulsed Drain Current-Max (IDM)160A
- DS Breakdown Voltage-Min20V
- Avalanche Energy Rating (Eas)32 mJ
- RoHS StatusROHS3 Compliant
IRF3717TRPBF Description
The Infineon Technologies IRF3717TRPBF20V is a Single N-Channel HEXFET Power MOSFET in a SO-8 package.
IRF3717TRPBF Features
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Lead-Free
IRF3717TRPBF Applications
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
The Infineon Technologies IRF3717TRPBF20V is a Single N-Channel HEXFET Power MOSFET in a SO-8 package.
IRF3717TRPBF Features
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Lead-Free
IRF3717TRPBF Applications
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
IRF3717TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 3.7Milliohms;ID 20A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 20V 4.4 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 20V 20A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Drain Source On Resistance @ 10V:4.4mohm RoHS Compliant: Yes
Single N-Channel 20V 4.4 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 20V 20A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Drain Source On Resistance @ 10V:4.4mohm RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF3717TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPower DissipationRise TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxLead FreeECCN CodeView Compare
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IRF3717TRPBF12 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2004yesObsolete1 (Unlimited)8GREENMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING4.4m Ω @ 20A, 10V2.45V @ 250μA2890pF @ 10V20A Ta33nC @ 4.5V20V4.5V 10V±20VMS-012AA20A0.0044Ohm160A20V32 mJROHS3 Compliant------------------ -
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----1-87W Tc-N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V20V4.5V 10V±20V------RoHS CompliantSurface Mount3D2PAK175°C-55°C20V77A90W98ns77A20V20V1.996nF13.5mOhm9 mΩLead Free-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------88W Tc-N-Channel-8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V20V2.8V 10V±12V------Non-RoHS Compliant-----------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-------87W Tc-N-Channel-12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V30V4.5V 10V±20V------Non-RoHS Compliant----------------EAR99
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