Infineon Technologies IRF3717
- Part Number:
- IRF3717
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484575-IRF3717
- Description:
- MOSFET N-CH 20V 20A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF3717
Infineon Technologies IRF3717 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3717.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.4m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.45V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2890pF @ 10V
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Gate Charge (Qg) (Max) @ Vgs33nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)20A
- Drain-source On Resistance-Max0.0044Ohm
- Pulsed Drain Current-Max (IDM)160A
- DS Breakdown Voltage-Min20V
- Avalanche Energy Rating (Eas)32 mJ
- RoHS StatusNon-RoHS Compliant
IRF3717 Description
IRF3717 is a 20v HEXFET? Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET IRF3717 is in the SOIC-8 package with 2.5W power dissipation.
IRF3717 Features
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking System
IRF3717 Applications
Notebook Processor Power
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
IRF3717 is a 20v HEXFET? Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET IRF3717 is in the SOIC-8 package with 2.5W power dissipation.
IRF3717 Features
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
Synchronous MOSFET for Notebook Processor Power
Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking System
IRF3717 Applications
Notebook Processor Power
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
IRF3717 More Descriptions
Trans MOSFET N-CH 20V 20A 8-Pin SOIC
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 20V, 20A, 4.4 mOhm, 22 nC Qg, SO-8
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 20V, 20A, 4.4 mOhm, 22 nC Qg, SO-8
The three parts on the right have similar specifications to IRF3717.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageAdditional FeatureCase ConnectionView Compare
-
IRF3717Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTubeHEXFET®2004e0Obsolete1 (Unlimited)8EAR99TIN LEAD8541.29.00.95MOSFET (Metal Oxide)DUALGULL WING24530R-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING4.4m Ω @ 20A, 10V2.45V @ 250μA2890pF @ 10V20A Ta33nC @ 4.5V20V4.5V 10V±20VMS-012AA20A0.0044Ohm160A20V32 mJNon-RoHS Compliant---- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Cut Tape (CT)HEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----------N-Channel-45m Ω @ 25A, 10V4.5V @ 250μA2260pF @ 25V41A Tc107nC @ 10V150V------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2000-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------87W Tc-N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V20V4.5V 10V±20V------Non-RoHS CompliantD2PAK--
-
Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)3EAR99--MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE330W TcENHANCEMENT MODEN-ChannelSWITCHING8m Ω @ 75A, 10V4V @ 250μA3650pF @ 25V75A Tc150nC @ 10V55V10V±20VTO-220AB75A0.008Ohm560A55V470 mJNon-RoHS Compliant-AVALANCHE RATEDDRAIN
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 February 2024
SG3525AN Controller: Specifications, Application Circuit and Other Details
Ⅰ. Overview of SG3525ANⅡ. Specifications of SG3525ANⅢ. Application circuit of SG3525ANⅣ. How to evaluate the efficiency of SG3525AN controller?Ⅴ. Recommended operating conditions for SG3525ANⅥ. What are the advantages... -
19 February 2024
SS14 Schottky Power Diode Function, Applications, Working Principle and Features
Ⅰ. What is a Schottky diode?Ⅱ. SS14 overviewⅢ. Common brands of SS14 diodeⅣ. Typical performance characteristics of SS14 diodeⅤ. The function of SS14 diodeⅥ. What are the applications... -
20 February 2024
LM358DR2G Operational Amplifier Symbol, Features, Applications and More
Ⅰ. Introduction to LM358DR2GⅡ. Technical parameters of LM358DR2GⅢ. Features of LM358DR2GⅣ. Symbol, footprint and pin configuration of LM358DR2GⅤ. Where is LM358DR2G used?Ⅵ. Circuit description of LM358DR2GⅦ. The difference... -
20 February 2024
MB6S Rectifier Bridge Specifications, Working Principle and Features
Ⅰ. Overview of MB6SⅡ. Specifications of MB6SⅢ. Working principle of MB6SⅣ. Circuit schematic diagram of MB6SⅤ. What are the features of MB6S?Ⅵ. Absolute maximum ratings of MB6SⅦ. How...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.