Infineon Technologies IRF3709ZPBF
- Part Number:
- IRF3709ZPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483318-IRF3709ZPBF
- Description:
- MOSFET N-CH 30V 87A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF3709Z (S,L) PbF
Infineon Technologies IRF3709ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3709ZPBF.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance6.3MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating87A
- Number of Elements1
- Power Dissipation-Max79W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation79mW
- Case ConnectionDRAIN
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.3m Ω @ 21A, 10V
- Vgs(th) (Max) @ Id2.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2130pF @ 15V
- Current - Continuous Drain (Id) @ 25°C87A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Rise Time41ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4.7 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)87A
- Threshold Voltage2.25V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)42A
- Drain to Source Breakdown Voltage30V
- Avalanche Energy Rating (Eas)60 mJ
- Recovery Time24 ns
- Nominal Vgs20 V
- Height8.763mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF3709ZPBF Description
IRF3709ZPBF is a 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. IRF3709ZPBF Especially as switching components in electronic control units and as power converters in contemporary electric vehicles, power MOSFETs are frequently utilized in automotive electronics.
IRF3709ZPBF Features RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
IRF3709ZPBF Applications Power Factor Correction
Switch Mode Power Supplies
Electronic Lamp Ballasts
IRF3709ZPBF Features RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
IRF3709ZPBF Applications Power Factor Correction
Switch Mode Power Supplies
Electronic Lamp Ballasts
IRF3709ZPBF More Descriptions
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 30V 87A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 30V 87A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
The three parts on the right have similar specifications to IRF3709ZPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF3709ZPBF16 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)3EAR996.3MOhmFET General Purpose Power30VMOSFET (Metal Oxide)87A179W TcSingleENHANCEMENT MODE79mWDRAIN13 nsN-ChannelSWITCHING6.3m Ω @ 21A, 10V2.25V @ 250μA2130pF @ 15V87A Tc26nC @ 4.5V41ns4.5V 10V±20V4.7 ns16 ns87A2.25VTO-220AB20V42A30V60 mJ24 ns20 V8.763mm10.5156mm4.69mmNo SVHCNoROHS3 CompliantLead Free-------- -
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--88W TcSingle-88W--N-Channel-8.5mOhm @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V87ns2.8V 10V±12V4.8 ns17 ns77A--12V-20V--------RoHS Compliant-D2PAK175°C-55°C20V2.41nF10.5mOhm8.5 mΩ
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--87W Tc-----N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V-4.5V 10V±20V----------------Non-RoHS Compliant-D2PAK--20V---
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)-EAR99---MOSFET (Metal Oxide)--87W Tc-----N-Channel-12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V-4.5V 10V±20V----------------Non-RoHS Compliant----30V---
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