Infineon Technologies IRF3709PBF
- Part Number:
- IRF3709PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482786-IRF3709PBF
- Description:
- MOSFET N-CH 30V 90A TO-220AB
- Datasheet:
- IRF3709PBF
Infineon Technologies IRF3709PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3709PBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2001
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance9Ohm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating90A
- Number of Elements1
- Power Dissipation-Max3.1W Ta 120W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation120W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2672pF @ 16V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs41nC @ 5V
- Rise Time171ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9.2 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)90A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Nominal Vgs3 V
- Height8.763mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF3709PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2672pF @ 16V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF3709PBF Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 3V
IRF3709PBF Applications
There are a lot of Infineon Technologies
IRF3709PBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2672pF @ 16V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF3709PBF Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 3V
IRF3709PBF Applications
There are a lot of Infineon Technologies
IRF3709PBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF3709PBF More Descriptions
Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 30V 90A 3-Pin(3 Tab) TO-220AB
MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 30V 90A 3-Pin(3 Tab) TO-220AB
MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF3709PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF3709PBF14 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeHEXFET®2001Not For New Designs1 (Unlimited)3EAR999OhmFET General Purpose Power30VMOSFET (Metal Oxide)90A13.1W Ta 120W TcSingleENHANCEMENT MODE120WDRAIN11 nsN-ChannelSWITCHING9m Ω @ 15A, 10V3V @ 250μA2672pF @ 16V90A Tc41nC @ 5V171ns4.5V 10V±20V9.2 ns21 ns90A3VTO-220AB20V75A30V30V3 V8.763mm10.5156mm4.69mmNo SVHCNoROHS3 CompliantLead Free--------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)----20VMOSFET (Metal Oxide)77A187W Tc--90W--N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V98ns4.5V 10V±20V--77A--20V-20V-------RoHS CompliantLead FreeD2PAK175°C-55°C20V1.996nF13.5mOhm9 mΩ
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--87W Tc-----N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V-4.5V 10V±20V---------------Non-RoHS Compliant-D2PAK--20V---
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)-EAR99---MOSFET (Metal Oxide)--87W Tc-----N-Channel-12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V-4.5V 10V±20V---------------Non-RoHS Compliant----30V---
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