IRF3709PBF

Infineon Technologies IRF3709PBF

Part Number:
IRF3709PBF
Manufacturer:
Infineon Technologies
Ventron No:
2482786-IRF3709PBF
Description:
MOSFET N-CH 30V 90A TO-220AB
ECAD Model:
Datasheet:
IRF3709PBF

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Specifications
Infineon Technologies IRF3709PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3709PBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2001
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    9Ohm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    90A
  • Number of Elements
    1
  • Power Dissipation-Max
    3.1W Ta 120W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    120W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2672pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    90A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    41nC @ 5V
  • Rise Time
    171ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9.2 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    90A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Nominal Vgs
    3 V
  • Height
    8.763mm
  • Length
    10.5156mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF3709PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2672pF @ 16V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IRF3709PBF Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 3V


IRF3709PBF Applications
There are a lot of Infineon Technologies
IRF3709PBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF3709PBF More Descriptions
Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 30V 90A 3-Pin(3 Tab) TO-220AB
MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF3709PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRF3709PBF
    IRF3709PBF
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    2001
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    9Ohm
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    90A
    1
    3.1W Ta 120W Tc
    Single
    ENHANCEMENT MODE
    120W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    9m Ω @ 15A, 10V
    3V @ 250μA
    2672pF @ 16V
    90A Tc
    41nC @ 5V
    171ns
    4.5V 10V
    ±20V
    9.2 ns
    21 ns
    90A
    3V
    TO-220AB
    20V
    75A
    30V
    30V
    3 V
    8.763mm
    10.5156mm
    4.69mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF3704STRLPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    20V
    MOSFET (Metal Oxide)
    77A
    1
    87W Tc
    -
    -
    90W
    -
    -
    N-Channel
    -
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    98ns
    4.5V 10V
    ±20V
    -
    -
    77A
    -
    -
    20V
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    D2PAK
    175°C
    -55°C
    20V
    1.996nF
    13.5mOhm
    9 mΩ
  • IRF3704STRL
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    87W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    D2PAK
    -
    -
    20V
    -
    -
    -
  • IRF3707S
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    87W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    12.5m Ω @ 15A, 10V
    3V @ 250μA
    1990pF @ 15V
    62A Tc
    19nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    30V
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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