Infineon Technologies IRF3415PBF

Name: IRF3415PBF
Brand: Infineon Technologies
SKU: 2479384-IRF3415PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF3415PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479384-IRF3415PBF

Description:: MOSFET N-CH 150V 43A TO-220AB

ECAD Model:

Datasheet:: IRF3415PBF

Specifications

Infineon Technologies IRF3415PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3415PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
42MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Current Rating
43A
Lead Pitch
2.54mm
Number of Elements
1
Voltage
150V
Power Dissipation-Max
200W Tc
Element Configuration
Single
Current
43A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
42m Ω @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
43A Tc
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Rise Time
55ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
69 ns
Turn-Off Delay Time
71 ns
Continuous Drain Current (ID)
43A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
150V
Dual Supply Voltage
150V
Avalanche Energy Rating (Eas)
590 mJ
Recovery Time
390 ns
Nominal Vgs
4 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF3415PBF Description
IRF3415PBF is a member of the fifth generation HEXFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.

IRF3415PBF Features
Extremely low on-resistance per silicon area
Fast switching speed
Ruggedized device design
Ultralow on-state resistance
Available in the TO-220AB package

IRF3415PBF Applications
Synchronous rectification
Uninterruptible power supply
High-speed switching

IRF3415PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS /-20V
Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 150V, 43A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3415PBF.
MOSFET, N, 150V, 43A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:150A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF3415PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
IRF3415PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

42MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

FET General Purpose Power

150V

MOSFET (Metal Oxide)

43A

2.54mm

1

150V

200W Tc

Single

43A

ENHANCEMENT MODE

200W

DRAIN

12 ns

N-Channel

SWITCHING

42m Ω @ 22A, 10V

4V @ 250μA

2400pF @ 25V

43A Tc

200nC @ 10V

55ns

10V

±20V

69 ns

71 ns

43A

4V

TO-220AB

20V

150V

150V

590 mJ

390 ns

4 V

15.24mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF3704ZSTRRPBF

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

57W Tc

-

-

-

-

-

-

N-Channel

-

7.9mOhm @ 21A, 10V

2.55V @ 250μA

1220pF @ 10V

67A Tc

13nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK

20V

-

-

-

-

-

-

-

-

-

-

-

IRF3415PBF vs IRF3704ZSTRRPBF
IRF3515STRLPBF

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Cut Tape (CT)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

45m Ω @ 25A, 10V

4.5V @ 250μA

2260pF @ 25V

41A Tc

107nC @ 10V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

150V

-

-

-

-

-

-

-

-

-

-

-

IRF3415PBF vs IRF3515STRLPBF
IRF3305

Infineon Technologies

-

-

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

AVALANCHE RATED

-

-

MOSFET (Metal Oxide)

-

-

1

-

330W Tc

-

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

8m Ω @ 75A, 10V

4V @ 250μA

3650pF @ 25V

75A Tc

150nC @ 10V

-

10V

±20V

-

-

-

-

TO-220AB

-

-

-

470 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

55V

NO

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

75A

0.008Ohm

560A

55V

IRF3415PBF vs IRF3305

Certification

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IRF3704ZCLPBF

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IRF3704ZSTRRPBF

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IRF3415PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T	1844	1 $1.5524 10 $1.2812 100 $0.7871 500 $0.6036 1000 $0.5754
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET N-CH 150V 43A TO-220AB RoHS: Compliant	5808	1 $1.99 50 $1.6054 100 $1.4449 500 $1.12382 1000 $0.93116
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T	8381	50 $0.622 100 $0.5999 500 $0.5797 1000 $0.5692
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T	1844	10 $1.5524
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T	550	7 $3.8887 10 $2.0145 50 $1.5682 100 $1.5172 200 $1.5045
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1 $0.6759 10 $0.6669 25 $0.6569 50 $0.6479 100 $0.6249 500 $0.6039 1000 $0.5929
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	0
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	N CHANNEL MOSFET, 150V, 43A, TO-220AB, Transistor	1426	1 $1.89 10 $1.61 100 $1.29 500 $1.13 1000 $0.932 2500 $0.868 5000 $0.835
IRF3415PBF. DISTI #IRF3415PBF.	Infineon Technologies AG	N CHANNEL MOSFET, 150V, 43A, TO-220AB, Transistor	0	1 $1.93 10 $1.64 100 $1.32 500 $1.13 1000 $0.932 2500 $0.868 5000 $0.835
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 150V, RDS(ON) 0.042O RoHS: Compliant	561	1 $3.61 10 $3.18 100 $2.78 500 $2.41 1000 $2.12
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Single N-Channel 150 V 42 mOhm 200 nC HEXFET Power RoHS: Compliant	33500	15 $0.93 150 $0.835 750 $0.73
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET MOSFT 150V 43A 42mOhm 133.3nC RoHS: Compliant	2470	1 $1.72 10 $1.46 100 $1.17 500 $1.03 1000 $0.847
IRF3415PBF DISTI #IRF3415PBF	International Rectifier	43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSF	6	1 $1.8 4 $1.35
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET N-CHANNEL 150V 43A TO220AB, TU	2638	10 $0.76 25 $0.7
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET N-CHANNEL 150V 43A TO220AB, EA	231	1 $2 10 $0.76 25 $0.7
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 150V, 43A, 200	418	1 $1.19 5 $1.08 25 $0.86 100 $0.76
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET, N, 150V, 43A, TO-220 RoHS: Compliant	4695	5 $0.775 25 $0.714 100 $0.668 250 $0.622 500 $0.575
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	1844	1 $1.5413 10 $1.3384 100 $1.0381 500 $0.8856 1000 $0.6919
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	550	1 $3.05 10 $1.58 50 $1.23 100 $1.19 200 $1.18 500 $1.05
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 43A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	9402	5 $1.65 25 $1.33 100 $1.1 500 $1.01 1000 $0.774 2000 $0.718
IRF3415PBF DISTI #IRF3415PBF	Infineon Technologies AG	MOSFET, N, 150V, 43A, TO-220 RoHS: Compliant	4097	1 $2.72 10 $2.32 100 $1.85 500 $1.63 1000 $1.35 2500 $1.25 5000 $1.2 10000 $1.16

IRF3415~~(12)~~
IRF341~~(14)~~
IRF34~~(18)~~
IRF3~~(55)~~
IRF~~(69)~~

Infineon Technologies IRF3415PBF

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