Infineon Technologies IRF3315STRL

Name: IRF3315STRL
Brand: Infineon Technologies
SKU: 2492556-IRF3315STRL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF3315STRL

Manufacturer:: Infineon Technologies

Ventron No:: 2492556-IRF3315STRL

Description:: MOSFET N-CH 150V 21A D2PAK

ECAD Model:

Datasheet:: IRF3315STRL

Specifications

Infineon Technologies IRF3315STRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3315STRL.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 94W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
82m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Gate Charge (Qg) (Max) @ Vgs
95nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
21A
Drain-source On Resistance-Max
0.082Ohm
Pulsed Drain Current-Max (IDM)
84A
DS Breakdown Voltage-Min
150V
Avalanche Energy Rating (Eas)
350 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF3315STRL Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 350 mJ.A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 21A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 84A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF3315STRL Features
the avalanche energy rating (Eas) is 350 mJ
based on its rated peak drain current 84A.
a 150V drain to source voltage (Vdss)

IRF3315STRL Applications
There are a lot of Infineon Technologies
IRF3315STRL applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF3315STRL More Descriptions

Trans MOSFET N-CH 150V 21A 3-Pin(2 Tab) D2PAK T/R
MOSFET, 150V, 21A, 82 mOhm, 63.3 nC Qg, D2-Pak
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
CoC and 2-years warranty / RFQ for pricing
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to IRF3315STRL.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Lead Free

View Compare
IRF3315STRL

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1997

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 94W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

82m Ω @ 12A, 10V

4V @ 250μA

1300pF @ 25V

21A Tc

95nC @ 10V

150V

10V

±20V

21A

0.082Ohm

84A

150V

350 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF3515STRLPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Cut Tape (CT)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

45m Ω @ 25A, 10V

4.5V @ 250μA

2260pF @ 25V

41A Tc

107nC @ 10V

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3315STRL vs IRF3515STRLPBF
IRF3704STRLPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

87W Tc

-

-

N-Channel

-

9mOhm @ 15A, 10V

3V @ 250μA

1996pF @ 10V

77A Tc

19nC @ 4.5V

20V

4.5V 10V

±20V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

175°C

-55°C

20V

77A

90W

98ns

77A

20V

20V

1.996nF

13.5mOhm

9 mΩ

Lead Free

IRF3315STRL vs IRF3704STRLPBF
IRF3704STRL

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

87W Tc

-

-

N-Channel

-

9mOhm @ 15A, 10V

3V @ 250μA

1996pF @ 10V

77A Tc

19nC @ 4.5V

20V

4.5V 10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

D2PAK

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF3315STRL vs IRF3704STRL

Certification

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IRF3704ZCLPBF

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IRF3704ZSTRRPBF

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IRF3315STRL Specification

Part Number	Manufacturers	Description	Stock	Price
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 21A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	1232	1 $1.2319 10 $1.0802 25 $1.0673 100 $0.8901 250 $0.8803 500 $0.7899 1000 $0.6719
IRF3315STRL DISTI #	Infineon Technologies AG	MOSFET N-CH 150V 21A D2PAK RoHS: Not Compliant	0
AUIRF3315STRL DISTI #	Infineon Technologies AG	MOSFET N-CH 150V 21A D2PAK RoHS: Compliant	0	800 $1.4587
IRF3315STRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 150V 21A D2PAK RoHS: Compliant	0	3200 $0.79269
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 21A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	1232	12 $1.0802 25 $1.0673 100 $0.8901 250 $0.8803 500 $0.7899 1000 $0.6719
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 21A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	5600	800 $0.7999 1600 $0.6539 3200 $0.5999 4800 $0.5529 8000 $0.5139
AUIRF3315STRL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 21A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $1.2089 1600 $1.1649 3200 $1.1229 4800 $1.0849 8000 $1.0659
AUIRF3315STRL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 21A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $1.8559 1600 $1.4449 3200 $1.2009 4800 $1.1209 8000 $1.0649
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 150V 21A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	3200 $0.6149 4800 $0.5929 8000 $0.5709 16000 $0.5519 32000 $0.5419
IRF3315STRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 150V, 21A, TO-263, Transistor Polar	1955	1 $1.57 10 $1.33 25 $1.24 50 $1.15 100 $1.06 250 $0.998 500 $0.935
IRF3315STRLPBF DISTI #	Infineon Technologies AG	IRF3315STRLPBF N-channel MOSFET Transistor, 21 A, RoHS: Compliant	0	3200 $2.72
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 21A I(D), 150V, 0.0 RoHS: Compliant	800	1 $0.81 25 $0.76 100 $0.73 500 $0.7 1000 $0.66
IRF3315STRLPBF DISTI #	International Rectifier	RoHS: Not Compliant	800	1 $0.96 25 $0.89 100 $0.85 500 $0.82 1000 $0.78
IRF3315STRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 150V 21A 82mOhm 63.3nC RoHS: Compliant	66	1 $1.57 10 $1.33 100 $1.06 500 $0.935
AUIRF3315STRL DISTI #	Infineon Technologies AG	MOSFET 150V, 21A, 82 mOhm Automotive MOSFET RoHS: Compliant	0
IRF3315STRL DISTI #	International Rectifier		20
IRF3315STRLPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 21A 150V D2PAK, RL	480	100 $0.773
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 21A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	1232	10 $1.0802 25 $1.0673 100 $0.8901 250 $0.8803
IRF3315STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 150V 21A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	433	800 $0.6631
IRF3315STRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 150V, 21A, TO-263 RoHS: Compliant	2025	5 $1.04 25 $1.01 100 $0.773 250 $0.68 500 $0.586
IRF3315STRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 150V, 21A, TO-263 RoHS: Compliant	1955	5 $2.65 25 $2.31 100 $1.89 250 $1.59 500 $1.38 1000 $1.3 5000 $1.24

IRF3315~~(9)~~
IRF331~~(12)~~
IRF33~~(20)~~
IRF3~~(55)~~
IRF~~(69)~~

Infineon Technologies IRF3315STRL

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