Infineon Technologies IRF3205PBF
- Part Number:
- IRF3205PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479875-IRF3205PBF
- Description:
- MOSFET N-CH 55V 110A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF3205PBF
Infineon Technologies IRF3205PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3205PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2001
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance8mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating110A
- Lead Pitch2.54mm
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max200W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 62A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3247pF @ 25V
- Current - Continuous Drain (Id) @ 25°C110A Tc
- Gate Charge (Qg) (Max) @ Vgs146nC @ 10V
- Rise Time101ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)110A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Avalanche Energy Rating (Eas)264 mJ
- Recovery Time104 ns
- Max Junction Temperature (Tj)175°C
- Nominal Vgs4 V
- Height19.8mm
- Length10.54mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRF3205PBF Description
International Rectifier's advanced HEXFET power MOSFET IRF3205PBF uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. TO-220 packages are generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost. IRF3205PBF Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
IRF3205PBF Applications Power Supplies Test Equipment
International Rectifier's advanced HEXFET power MOSFET IRF3205PBF uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. TO-220 packages are generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost. IRF3205PBF Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
IRF3205PBF Applications Power Supplies Test Equipment
IRF3205PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S
Transistor MOSFET N Channel 55 Volt 110 Amp 3 Pin 3 Tab TO-220 AB
Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 55V 110A 8mΩ 175°C TO-220 IRF3205-PBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 110A/55V TO220 IRF 3205 PBF
55V 110A 8m´Î@10V62A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 55V, 110A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3205PBF.
MOSFET, N, 55V, 98A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 110A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 1°C/W; Lead Spacing: 2.54mm; No. of Transistors: 1; On State resistance @ Vgs = 10V: 8mohm; Operating Temperature Min: -55°C; Pin Format: 1 g; 2 d/tab; 3 s; Pulse Current Idm: 390A; Termination Type: Through Hole; Voltage Vds Typ: 55V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
Transistor MOSFET N Channel 55 Volt 110 Amp 3 Pin 3 Tab TO-220 AB
Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 55V 110A 8mΩ 175°C TO-220 IRF3205-PBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 110A/55V TO220 IRF 3205 PBF
55V 110A 8m´Î@10V62A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 55V, 110A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3205PBF.
MOSFET, N, 55V, 98A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 110A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 1°C/W; Lead Spacing: 2.54mm; No. of Transistors: 1; On State resistance @ Vgs = 10V: 8mohm; Operating Temperature Min: -55°C; Pin Format: 1 g; 2 d/tab; 3 s; Pulse Current Idm: 390A; Termination Type: Through Hole; Voltage Vds Typ: 55V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to IRF3205PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingLead PitchNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF3205PBF12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2001Active1 (Unlimited)3Through HoleEAR998mOhmAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose Power55VMOSFET (Metal Oxide)110A2.54mm11200W TcSingleENHANCEMENT MODE150WDRAIN14 nsN-ChannelSWITCHING8m Ω @ 62A, 10V4V @ 250μA3247pF @ 25V110A Tc146nC @ 10V101ns10V±20V65 ns50 ns110A4VTO-220AB20V75A55V55V264 mJ104 ns175°C4 V19.8mm10.54mm4.69mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-------- -
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)------20VMOSFET (Metal Oxide)77A-1-87W Tc--90W--N-Channel-9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V98ns4.5V 10V±20V--77A--20V-20V----------RoHS CompliantLead FreeD2PAK175°C-55°C20V1.996nF13.5mOhm9 mΩ
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)----88W Tc-----N-Channel-8.5m Ω @ 15A, 10V2V @ 250μA2410pF @ 10V77A Tc35nC @ 4.5V-2.8V 10V±12V------------------Non-RoHS Compliant----20V---
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)--EAR99----MOSFET (Metal Oxide)----87W Tc-----N-Channel-12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V-4.5V 10V±20V------------------Non-RoHS Compliant----30V---
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