IRF3007PBF

Infineon Technologies IRF3007PBF

Part Number:
IRF3007PBF
Manufacturer:
Infineon Technologies
Ventron No:
2851902-IRF3007PBF
Description:
MOSFET N-CH 75V 75A TO-220AB
ECAD Model:
Datasheet:
IRF3007PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF3007PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3007PBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2002
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    12.6Ohm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    75V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    80A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    200W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12.6m Ω @ 48A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3270pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Rise Time
    80ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    49 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    75A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    75V
  • Dual Supply Voltage
    75V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • Nominal Vgs
    4 V
  • Height
    16.51mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF3007PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 280 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3270pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IRF3007PBF Features
the avalanche energy rating (Eas) is 280 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 55 ns


IRF3007PBF Applications
There are a lot of Infineon Technologies
IRF3007PBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF3007PBF More Descriptions
Single N-Channel 75 V 12.6 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, 75V, 80A, 12.6 MOHM, 89 NC QG, TO-220AB
Trans MOSFET N-CH 80V 80A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 75V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.74°C/W; On State resistance @ Vgs = 10V:12.6ohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF3007PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Supplier Device Package
    View Compare
  • IRF3007PBF
    IRF3007PBF
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    12.6Ohm
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    75V
    MOSFET (Metal Oxide)
    GULL WING
    80A
    R-PSSO-G2
    1
    200W Tc
    Single
    ENHANCEMENT MODE
    200W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    12.6m Ω @ 48A, 10V
    4V @ 250μA
    3270pF @ 25V
    75A Tc
    130nC @ 10V
    80ns
    10V
    ±20V
    49 ns
    55 ns
    75A
    TO-220AB
    20V
    75V
    75V
    280 mJ
    4 V
    16.51mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • IRF3704ZCLPBF
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    57W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    7.9m Ω @ 21A, 10V
    2.55V @ 250μA
    1220pF @ 10V
    67A Tc
    13nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    20V
    -
  • IRF3704STRL
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    87W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    9mOhm @ 15A, 10V
    3V @ 250μA
    1996pF @ 10V
    77A Tc
    19nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    20V
    D2PAK
  • IRF3707S
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    87W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    12.5m Ω @ 15A, 10V
    3V @ 250μA
    1990pF @ 15V
    62A Tc
    19nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    30V
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.