Infineon Technologies IRF3000
- Part Number:
- IRF3000
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071509-IRF3000
- Description:
- MOSFET N-CH 300V 1.6A 8-SOIC
- Datasheet:
- IRF3000
Infineon Technologies IRF3000 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF3000.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs400mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds730pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
- Drain to Source Voltage (Vdss)300V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- RoHS StatusNon-RoHS Compliant
IRF3000 Description
IRF3000 is a 300V N-MOSFET HEXFET MOSFET. The IRF3000 can replace electromechanical relays in many telecommunications and networking applications. As it is a solid-state semiconductor device with no mechanical parts, it increases the reliability of the entire system while being 30% smaller than an electromechanical relay.
The IRF3000 is more efficient than electromechanical relays, with an open-state resistance 90% lower than electromechanical relays, minimizing conduction losses. The ultra-low gate charge in turn minimizes switching losses. The IRF3000 is easier to drive than an electromechanical relay, simplifying the circuit and reducing system costs.
IRF3000 Features Type Designator: IRF3000
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7.2 nS
Drain-Source Capacitance (Cd): 940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: SO8
IRF3000 Applications High-frequency DC-DC converters
DC to DC Converter
Switched Mode Power Supplies
Motor Drivers
Battery charger circuits
IRF3000 Features Type Designator: IRF3000
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7.2 nS
Drain-Source Capacitance (Cd): 940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: SO8
IRF3000 Applications High-frequency DC-DC converters
DC to DC Converter
Switched Mode Power Supplies
Motor Drivers
Battery charger circuits
IRF3000 More Descriptions
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Power D
Trans MOSFET N-CH 300V 1.6A 8-Pin SOIC
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Trans MOSFET N-CH 300V 1.6A 8-Pin SOIC
300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
The three parts on the right have similar specifications to IRF3000.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusECCN CodeView Compare
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IRF3000Surface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTubeHEXFET®2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel400mOhm @ 960mA, 10V5V @ 250μA730pF @ 25V1.6A Ta33nC @ 10V300V10V±30VNon-RoHS Compliant--
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)57W TcN-Channel7.9mOhm @ 21A, 10V2.55V @ 250μA1220pF @ 10V67A Tc13nC @ 4.5V20V4.5V 10V±20V--
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)87W TcN-Channel9mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V77A Tc19nC @ 4.5V20V4.5V 10V±20VNon-RoHS Compliant-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTubeHEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)87W TcN-Channel12.5m Ω @ 15A, 10V3V @ 250μA1990pF @ 15V62A Tc19nC @ 4.5V30V4.5V 10V±20VNon-RoHS CompliantEAR99
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