Infineon Technologies IPA65R1K0CEXKSA1
- Part Number:
- IPA65R1K0CEXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483491-IPA65R1K0CEXKSA1
- Description:
- MOSFET N-CH 650V TO220-3
- ECAD Model:
-
- Datasheet:
- IPA65R1K0CEXKSA1
Infineon Technologies IPA65R1K0CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA65R1K0CEXKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max68W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1 Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id3.5V @ 200μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds328pF @ 100V
- Current - Continuous Drain (Id) @ 25°C7.2A Tc
- Gate Charge (Qg) (Max) @ Vgs15.3nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)7.2A
- JEDEC-95 CodeTO-220AB
- Max Dual Supply Voltage650V
- Drain-source On Resistance-Max1Ohm
- Pulsed Drain Current-Max (IDM)12A
- Avalanche Energy Rating (Eas)50 mJ
- FET FeatureSuper Junction
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPA65R1K0CEXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 328pF @ 100V.This device conducts a continuous drain current (ID) of 7.2A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 12A.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA65R1K0CEXKSA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 7.2A
based on its rated peak drain current 12A.
IPA65R1K0CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R1K0CEXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 328pF @ 100V.This device conducts a continuous drain current (ID) of 7.2A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 12A.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA65R1K0CEXKSA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 7.2A
based on its rated peak drain current 12A.
IPA65R1K0CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R1K0CEXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPA65R1K0CEXKSA1 More Descriptions
Trans MOSFET N-CH 650V 7.2A 3-Pin(3 Tab) TO-220FP Tube, PG-TO220-3, RoHS
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.1pF 50volts C0G /-0.5pF
Mosfet, N-Ch, 650V, 7.2A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R1K0CEXKSA1
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.2 / Drain-Source Voltage (Vds) V = 700 / ON Resistance (Rds(on)) Ohm = 1 / Gate-Source Voltage V = 20 / Fall Time ns = 13.6 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 68
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.1pF 50volts C0G /-0.5pF
Mosfet, N-Ch, 650V, 7.2A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPA65R1K0CEXKSA1
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.2 / Drain-Source Voltage (Vds) V = 700 / ON Resistance (Rds(on)) Ohm = 1 / Gate-Source Voltage V = 20 / Fall Time ns = 13.6 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 68
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
The three parts on the right have similar specifications to IPA65R1K0CEXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeMax Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET FeatureRoHS StatusLead FreeNumber of PinsPin CountQualification StatusPower DissipationTurn On Delay TimeRise TimeDrain to Source Voltage (Vdss)Turn-Off Delay TimeGate to Source Voltage (Vgs)Supplier Device PackageSurface MountDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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IPA65R1K0CEXKSA118 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2016e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE68W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING1 Ω @ 1.5A, 10V3.5V @ 200μAHalogen Free328pF @ 100V7.2A Tc15.3nC @ 10V10V±20V7.2ATO-220AB650V1Ohm12A50 mJSuper JunctionROHS3 CompliantLead Free-------------- -
16 WeeksThrough HoleThrough HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2007e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE34W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING199m Ω @ 9.9A, 10V3.5V @ 1.1mAHalogen Free1520pF @ 100V16A Tc43nC @ 10V10V±20V16ATO-220AB600V----ROHS3 CompliantLead Free33Not Qualified34W10 ns5ns650V50 ns20V----
-
--Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)------30W Tc--N-Channel-520mOhm @ 3.8A, 10V3.5V @ 250μA-630pF @ 100V6.8A Tc31nC @ 10V10V±20V-------ROHS3 Compliant-------600V--PG-TO220-FP---
-
12 Weeks-Through HoleTO-220-3 Full PackSILICON-55°C~150°C TJTubeCoolMOS™2008e3yesNot For New Designs1 (Unlimited)3-Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE33W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING299m Ω @ 6.6A, 10V3.5V @ 440μA-1100pF @ 100V11A Tc29nC @ 10V10V±20V-TO-220AB-0.299Ohm34A290 mJ-ROHS3 Compliant--3Not Qualified---600V---NO11A600V
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