Infineon Technologies IPA65R045C7XKSA1

IPA65R045C7XKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 249 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4340pF @ 400V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.Peak drain current is 212A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 650V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPA65R045C7XKSA1 Features
the avalanche energy rating (Eas) is 249 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 82 ns
based on its rated peak drain current 212A.


IPA65R045C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R045C7XKSA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies