IPA60R750E6

Infineon Technologies IPA60R750E6

Part Number:
IPA60R750E6
Manufacturer:
Infineon Technologies
Ventron No:
2483598-IPA60R750E6
Description:
MOSFET N-CH 600V 5.7A TO220
ECAD Model:
Datasheet:
IPA60R750E6

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Specifications
Infineon Technologies IPA60R750E6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R750E6.
  • Package / Case
    PG-TO220-3
  • Packaging
    Tube-packed
  • RoHS Status
    RoHS Compliant
Description
IPA60R750E6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPA60R750E6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPA60R750E6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPA60R750E6.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Mounting Type
    Supplier Device Package
    Operating Temperature
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Factory Lead Time
    Surface Mount
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IPA60R750E6
    IPA60R750E6
    PG-TO220-3
    Tube-packed
    RoHS Compliant
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  • IPA60R280C6
    PG-TO220-3
    Tube-packed
    RoHS Compliant
    -
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  • IPA60R520CPXKSA1
    TO-220-3 Full Pack
    Tube
    ROHS3 Compliant
    Through Hole
    PG-TO220-FP
    -55°C~150°C TJ
    CoolMOS™
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    30W Tc
    N-Channel
    520mOhm @ 3.8A, 10V
    3.5V @ 250μA
    630pF @ 100V
    6.8A Tc
    31nC @ 10V
    600V
    10V
    ±20V
    -
    -
    -
    -
    -
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  • IPA60R299CPXKSA1
    TO-220-3 Full Pack
    Tube
    ROHS3 Compliant
    Through Hole
    -
    -55°C~150°C TJ
    CoolMOS™
    Not For New Designs
    1 (Unlimited)
    MOSFET (Metal Oxide)
    33W Tc
    N-Channel
    299m Ω @ 6.6A, 10V
    3.5V @ 440μA
    1100pF @ 100V
    11A Tc
    29nC @ 10V
    600V
    10V
    ±20V
    12 Weeks
    NO
    SILICON
    2008
    e3
    yes
    3
    Tin (Sn)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    TO-220AB
    11A
    0.299Ohm
    34A
    600V
    290 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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