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IPA60R360P7XKSA1

Infineon Technologies IPA60R360P7XKSA1

Part Number:
IPA60R360P7XKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2484169-IPA60R360P7XKSA1
Description:
MOSFET N-CH 650V 9A TO220
ECAD Model:
Datasheet:
IPA60R360P7XKSA1

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Specifications
Infineon Technologies IPA60R360P7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R360P7XKSA1.
  • Factory Lead Time
    18 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™ P7
  • Published
    2014
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    22W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    360m Ω @ 2.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 140μA
  • Input Capacitance (Ciss) (Max) @ Vds
    555pF @ 400V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Drain to Source Voltage (Vdss)
    650V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.36Ohm
  • Pulsed Drain Current-Max (IDM)
    26A
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    27 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IPA60R360P7XKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 27 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 555pF @ 400V.A maximum pulsed drain current of 26A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IPA60R360P7XKSA1 Features
the avalanche energy rating (Eas) is 27 mJ
based on its rated peak drain current 26A.
a 650V drain to source voltage (Vdss)


IPA60R360P7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R360P7XKSA1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPA60R360P7XKSA1 More Descriptions
Single N-Channel 600V 360 mOhm 13 nC CoolMOS™ Power Mosfet - TO-220-3FP
Transistor MOSFET N-CH 600V 9A 3-Pin TO-220FP Tube
Mosfet, N-Ch, 600V, 9A, 22W, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPA60R360P7XKSA1
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Product Comparison
The three parts on the right have similar specifications to IPA60R360P7XKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    JESD-609 Code
    Terminal Finish
    Turn On Delay Time
    Halogen Free
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain Current-Max (Abs) (ID)
    Lead Free
    Pin Count
    Qualification Status
    Power Dissipation
    Supplier Device Package
    View Compare
  • IPA60R360P7XKSA1
    IPA60R360P7XKSA1
    Infineon Technologies
    18 Weeks
    Through Hole
    TO-220-3 Full Pack
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™ P7
    2014
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    22W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    360m Ω @ 2.7A, 10V
    4V @ 140μA
    555pF @ 400V
    9A Tc
    13nC @ 10V
    650V
    10V
    ±20V
    TO-220AB
    0.36Ohm
    26A
    600V
    27 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPA65R065C7XKSA1
    IPA65R065C7XKSA1
    Infineon Technologies
    18 Weeks
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™ C7
    2005
    -
    Active
    1 (Unlimited)
    3
    -
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    SINGLE WITH BUILT-IN DIODE
    34W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    65m Ω @ 17.1A, 10V
    4V @ 850μA
    3020pF @ 400V
    15A Tc
    64nC @ 10V
    -
    10V
    ±20V
    TO-220AB
    0.065Ohm
    145A
    -
    171 mJ
    ROHS3 Compliant
    Through Hole
    3
    e3
    Tin (Sn)
    17 ns
    Halogen Free
    14ns
    7 ns
    72 ns
    15A
    20V
    650V
    19A
    Lead Free
    -
    -
    -
    -
    IPA60R360P7XKSA1 vs IPA65R065C7XKSA1
  • IPA60R199CPXKSA1
    IPA60R199CPXKSA1
    Infineon Technologies
    16 Weeks
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2007
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    SINGLE WITH BUILT-IN DIODE
    34W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    199m Ω @ 9.9A, 10V
    3.5V @ 1.1mA
    1520pF @ 100V
    16A Tc
    43nC @ 10V
    650V
    10V
    ±20V
    TO-220AB
    -
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    3
    e3
    Tin (Sn)
    10 ns
    Halogen Free
    5ns
    -
    50 ns
    16A
    20V
    600V
    -
    Lead Free
    3
    Not Qualified
    34W
    -
    IPA60R360P7XKSA1 vs IPA60R199CPXKSA1
  • IPA60R520CPXKSA1
    IPA60R520CPXKSA1
    Infineon Technologies
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    30W Tc
    -
    -
    N-Channel
    -
    520mOhm @ 3.8A, 10V
    3.5V @ 250μA
    630pF @ 100V
    6.8A Tc
    31nC @ 10V
    600V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO220-FP
    IPA60R360P7XKSA1 vs IPA60R520CPXKSA1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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