Infineon Technologies IPA60R330P6XKSA1
- Part Number:
- IPA60R330P6XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484248-IPA60R330P6XKSA1
- Description:
- MOSFET N-CH 600V 12A TO220FP-3
- Datasheet:
- IPA60R330P6XKSA1
Infineon Technologies IPA60R330P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R330P6XKSA1.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Supplier Device PackagePG-TO220-FP
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P6
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max32W Tc
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs330mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 370μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1010pF @ 100V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time7ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage600V
- Input Capacitance1.01nF
- Drain to Source Resistance297mOhm
- Rds On Max330 mΩ
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IPA60R330P6XKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1010pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 297mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IPA60R330P6XKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)
IPA60R330P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R330P6XKSA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1010pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 297mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IPA60R330P6XKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)
IPA60R330P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R330P6XKSA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IPA60R330P6XKSA1 More Descriptions
N-Channel 600 V 7 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220FP
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-220FP Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50volts C0G /-0.5pF
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-220FP Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50volts C0G /-0.5pF
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPA60R330P6XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IPA60R330P6XKSA112 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3PG-TO220-FP6.000006g-55°C~150°C TJTubeCoolMOS™ P62008Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)132W Tc12 nsN-Channel330mOhm @ 4.5A, 10V4.5V @ 370μAHalogen Free1010pF @ 100V12A Tc22nC @ 10V7ns600V10V±20V7 ns33 ns12A20V600V1.01nF297mOhm330 mΩRoHS CompliantLead Free--------------------------
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--Through HoleTO-220-3 Full Pack----55°C~150°C TJTubeCoolMOS™2008Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-28W Tc-N-Channel600m Ω @ 3.3A, 10V3.5V @ 220μA-550pF @ 100V6.1A Tc27nC @ 10V-600V10V±20V--------RoHS Compliant-NOSILICONe3yes3EAR99Tin (Sn)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB6.1A0.6Ohm15A600V144 mJ
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™ C72005Active1 (Unlimited)--MOSFET (Metal Oxide)-34W Tc17 nsN-Channel65m Ω @ 17.1A, 10V4V @ 850μAHalogen Free3020pF @ 400V15A Tc64nC @ 10V14ns-10V±20V7 ns72 ns15A20V650V---ROHS3 CompliantLead Free-SILICONe3-3-Tin (Sn)SINGLENOT SPECIFIED-NOT SPECIFIED---1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB19A0.065Ohm145A-171 mJ
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18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTubeCoolMOS™ P62008Active1 (Unlimited)--MOSFET (Metal Oxide)-34W Tc20 nsN-Channel99m Ω @ 14.5A, 10V4.5V @ 1.21mAHalogen Free3330pF @ 100V37.9A Tc70nC @ 10V10ns-10V±20V5 ns50 ns37.9A30V600V---ROHS3 CompliantLead Free--e3yes-EAR99Tin (Sn)-NOT SPECIFIED-NOT SPECIFIED--------------
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