IPA60R330P6XKSA1

Infineon Technologies IPA60R330P6XKSA1

Part Number:
IPA60R330P6XKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2484248-IPA60R330P6XKSA1
Description:
MOSFET N-CH 600V 12A TO220FP-3
ECAD Model:
Datasheet:
IPA60R330P6XKSA1

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Specifications
Infineon Technologies IPA60R330P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R330P6XKSA1.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Supplier Device Package
    PG-TO220-FP
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™ P6
  • Published
    2008
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    32W Tc
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    330mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 370μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    1010pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    7ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    12A
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    600V
  • Input Capacitance
    1.01nF
  • Drain to Source Resistance
    297mOhm
  • Rds On Max
    330 mΩ
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IPA60R330P6XKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1010pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 297mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPA60R330P6XKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)


IPA60R330P6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R330P6XKSA1 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IPA60R330P6XKSA1 More Descriptions
N-Channel 600 V 7 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220FP
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-220FP Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50volts C0G /-0.5pF
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Product Comparison
The three parts on the right have similar specifications to IPA60R330P6XKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IPA60R330P6XKSA1
    IPA60R330P6XKSA1
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    PG-TO220-FP
    6.000006g
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    32W Tc
    12 ns
    N-Channel
    330mOhm @ 4.5A, 10V
    4.5V @ 370μA
    Halogen Free
    1010pF @ 100V
    12A Tc
    22nC @ 10V
    7ns
    600V
    10V
    ±20V
    7 ns
    33 ns
    12A
    20V
    600V
    1.01nF
    297mOhm
    330 mΩ
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPA60R600CPXKSA1
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    28W Tc
    -
    N-Channel
    600m Ω @ 3.3A, 10V
    3.5V @ 220μA
    -
    550pF @ 100V
    6.1A Tc
    27nC @ 10V
    -
    600V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    NO
    SILICON
    e3
    yes
    3
    EAR99
    Tin (Sn)
    SINGLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    TO-220AB
    6.1A
    0.6Ohm
    15A
    600V
    144 mJ
  • IPA65R065C7XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ C7
    2005
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    34W Tc
    17 ns
    N-Channel
    65m Ω @ 17.1A, 10V
    4V @ 850μA
    Halogen Free
    3020pF @ 400V
    15A Tc
    64nC @ 10V
    14ns
    -
    10V
    ±20V
    7 ns
    72 ns
    15A
    20V
    650V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    e3
    -
    3
    -
    Tin (Sn)
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    TO-220AB
    19A
    0.065Ohm
    145A
    -
    171 mJ
  • IPA60R099P6XKSA1
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2008
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    34W Tc
    20 ns
    N-Channel
    99m Ω @ 14.5A, 10V
    4.5V @ 1.21mA
    Halogen Free
    3330pF @ 100V
    37.9A Tc
    70nC @ 10V
    10ns
    -
    10V
    ±20V
    5 ns
    50 ns
    37.9A
    30V
    600V
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    e3
    yes
    -
    EAR99
    Tin (Sn)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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