Infineon Technologies IPA60R250CPXKSA1
- Part Number:
- IPA60R250CPXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851876-IPA60R250CPXKSA1
- Description:
- MOSFET N-CH 650V 12A TO220-3
- ECAD Model:
-
- Datasheet:
- IPA60R250CPXKSA1
Infineon Technologies IPA60R250CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R250CPXKSA1.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Supplier Device PackagePG-TO220-FP
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max33W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id3.5V @ 440μA
- Input Capacitance (Ciss) (Max) @ Vds1.3pF @ 100V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPA60R250CPXKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.3pF @ 100V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA60R250CPXKSA1 Features
a 650V drain to source voltage (Vdss)
IPA60R250CPXKSA1 Applications
There are a lot of Rochester Electronics, LLC
IPA60R250CPXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.3pF @ 100V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA60R250CPXKSA1 Features
a 650V drain to source voltage (Vdss)
IPA60R250CPXKSA1 Applications
There are a lot of Rochester Electronics, LLC
IPA60R250CPXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPA60R250CPXKSA1 More Descriptions
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-220FP
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IPA60R250CPXKSA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimeSurface MountNumber of PinsPublishedPbfree CodeNumber of TerminationsMax Operating TemperatureMin Operating TemperatureSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationHalogen FreeRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyDrain to Source ResistanceRds On MaxCapacitance - InputHeightLengthWidthLead FreeMountTransistor Element MaterialJESD-609 CodeTerminal FinishTerminal PositionConfigurationMax Dual Supply VoltageDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxAvalanche Energy Rating (Eas)View Compare
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IPA60R250CPXKSA1Through HoleTO-220-3 Full PackPG-TO220-FP-55°C~150°C TJTubeCoolMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)33W TcN-Channel250mOhm @ 7.8A, 10V3.5V @ 440μA1.3pF @ 100V12A Tc35nC @ 10V650V10V±20VROHS3 Compliant------------------------------------------------- -
-TO-220-3----Active--29W---------RoHS Compliant12 WeeksNO32011yes3150°C-55°CFET General Purpose PowerTHROUGH-HOLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SingleENHANCEMENT MODEISOLATED13 nsSWITCHINGHalogen Free10nsN-CHANNEL14 ns85 ns8.1ATO-220AB20V600V22AMETAL-OXIDE SEMICONDUCTOR520mOhm520 mΩ512pF16.15mm10.65mm4.85mmLead Free----------
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Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeCoolMOS™ C7Active1 (Unlimited)MOSFET (Metal Oxide)34W TcN-Channel65m Ω @ 17.1A, 10V4V @ 850μA3020pF @ 400V15A Tc64nC @ 10V-10V±20VROHS3 Compliant18 Weeks-32005-3----NOT SPECIFIEDNOT SPECIFIED--1-ENHANCEMENT MODEISOLATED17 nsSWITCHINGHalogen Free14ns-7 ns72 ns15ATO-220AB20V-145A-------Lead FreeThrough HoleSILICONe3Tin (Sn)SINGLESINGLE WITH BUILT-IN DIODE650V19A0.065Ohm171 mJ
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-PG-TO220-3--Tube-packed--------------RoHS Compliant------------------------------------------------
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