Infineon Technologies IPA60R1K5CEXKSA1

Name: IPA60R1K5CEXKSA1
Brand: Infineon Technologies
SKU: 2487371-IPA60R1K5CEXKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA60R1K5CEXKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2487371-IPA60R1K5CEXKSA1

Description:: MOSFET N-CH 600V TO220-3

ECAD Model:

Datasheet:: IPA60R1K5CEXKSA1

Specifications

Infineon Technologies IPA60R1K5CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R1K5CEXKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Series
CoolMOS™
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
20W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
200pF @ 100V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
9.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
5A
JEDEC-95 Code
TO-220AB
Max Dual Supply Voltage
600V
Pulsed Drain Current-Max (IDM)
8A
Avalanche Energy Rating (Eas)
26 mJ
FET Feature
Super Junction
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPA60R1K5CEXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 26 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 100V.This device conducts a continuous drain current (ID) of 5A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 8A.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPA60R1K5CEXKSA1 Features
the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 8A.

IPA60R1K5CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R1K5CEXKSA1 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IPA60R1K5CEXKSA1 More Descriptions

Trans MOSFET N-CH 600V 5A 3-Pin(3 Tab) TO-220FP Tube, PG-TO220-3, RoHSInfineon SCT
IPA60R1K5 - 600V, N-CHANNEL POWE
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Product Comparison

The three parts on the right have similar specifications to IPA60R1K5CEXKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Max Dual Supply Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

FET Feature

RoHS Status

Lead Free

Number of Pins

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
IPA60R1K5CEXKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

SILICON

-40°C~150°C TJ

Tube

CoolMOS™

2016

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

20W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

1.5 Ω @ 1.1A, 10V

3.5V @ 90μA

Halogen Free

200pF @ 100V

5A Tc

9.4nC @ 10V

10V

±20V

5A

TO-220AB

600V

8A

26 mJ

Super Junction

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
IPA60R280C6

Infineon Technologies

-

-

-

PG-TO220-3

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

IPA60R1K5CEXKSA1 vs IPA60R280C6
IPA60R099P6XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-

-55°C~150°C TJ

Tube

CoolMOS™ P6

2008

e3

yes

Active

1 (Unlimited)

-

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

34W Tc

-

-

N-Channel

-

99m Ω @ 14.5A, 10V

4.5V @ 1.21mA

Halogen Free

3330pF @ 100V

37.9A Tc

70nC @ 10V

10V

±20V

37.9A

-

600V

-

-

-

ROHS3 Compliant

Lead Free

3

20 ns

10ns

5 ns

50 ns

30V

-

-

IPA60R1K5CEXKSA1 vs IPA60R099P6XKSA1
IPA60R520CPXKSA1

Infineon Technologies

-

-

Through Hole

TO-220-3 Full Pack

-

-55°C~150°C TJ

Tube

CoolMOS™

-

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

30W Tc

-

-

N-Channel

-

520mOhm @ 3.8A, 10V

3.5V @ 250μA

-

630pF @ 100V

6.8A Tc

31nC @ 10V

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

PG-TO220-FP

600V

IPA60R1K5CEXKSA1 vs IPA60R520CPXKSA1