Infineon Technologies IPA60R180P7XKSA1

Name: IPA60R180P7XKSA1
Brand: Infineon Technologies
SKU: 2484425-IPA60R180P7XKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA60R180P7XKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2484425-IPA60R180P7XKSA1

Description:: MOSFET N-CH 650V 18A TO220

ECAD Model:

Datasheet:: IPA60R180P7XKSA1

Specifications

Infineon Technologies IPA60R180P7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R180P7XKSA1.

Factory Lead Time
18 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ P7
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
26W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds
1081pF @ 400V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.18Ohm
Pulsed Drain Current-Max (IDM)
53A
DS Breakdown Voltage-Min
600V
Avalanche Energy Rating (Eas)
56 mJ
RoHS Status
ROHS3 Compliant

Description

IPA60R180P7XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 56 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1081pF @ 400V.Pulsed drain current is maximum rated peak drain current 53A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IPA60R180P7XKSA1 Features
the avalanche energy rating (Eas) is 56 mJ
based on its rated peak drain current 53A.
a 650V drain to source voltage (Vdss)

IPA60R180P7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R180P7XKSA1 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IPA60R180P7XKSA1 More Descriptions

Single N-Channel 600V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-220-3FP
MOSFET, N-CH, 600V, 18A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

Product Comparison

The three parts on the right have similar specifications to IPA60R180P7XKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Number of Pins

Max Operating Temperature

Min Operating Temperature

Subcategory

Terminal Form

Pin Count

Qualification Status

Element Configuration

Turn On Delay Time

Halogen Free

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

Drain to Source Resistance

Rds On Max

Capacitance - Input

Height

Length

Width

Lead Free

Mount

Max Dual Supply Voltage

Reach Compliance Code

Drain Current-Max (Abs) (ID)

View Compare
IPA60R180P7XKSA1

Infineon Technologies

18 Weeks

Through Hole

TO-220-3 Full Pack

NO

SILICON

-55°C~150°C TJ

Tube

CoolMOS™ P7

2014

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

26W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

180m Ω @ 5.6A, 10V

4V @ 280μA

1081pF @ 400V

18A Tc

25nC @ 10V

650V

10V

±20V

TO-220AB

0.18Ohm

53A

600V

56 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPA60R520C6

Infineon Technologies

12 Weeks

-

TO-220-3

NO

-

-

-

-

2011

-

yes

Active

-

3

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

1

-

29W

ENHANCEMENT MODE

ISOLATED

-

SWITCHING

-

-

-

-

-

-

-

-

TO-220AB

-

22A

-

-

RoHS Compliant

3

150°C

-55°C

FET General Purpose Power

THROUGH-HOLE

3

Not Qualified

Single

13 ns

Halogen Free

10ns

N-CHANNEL

14 ns

85 ns

8.1A

20V

600V

METAL-OXIDE SEMICONDUCTOR

520mOhm

520 mΩ

512pF

16.15mm

10.65mm

4.85mm

Lead Free

-

-

-

-

IPA60R180P7XKSA1 vs IPA60R520C6
IPA60R125P6XKSA1

Infineon Technologies

18 Weeks

Through Hole

TO-220-3 Full Pack

-

SILICON

-55°C~150°C TJ

Tube

CoolMOS™ P6

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

34W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

125m Ω @ 11.6A, 10V

4.5V @ 960μA

2660pF @ 100V

30A Tc

56nC @ 10V

-

10V

±20V

TO-220AB

0.125Ohm

87A

-

-

ROHS3 Compliant

3

-

-

-

-

-

-

-

14 ns

Halogen Free

9ns

-

5 ns

44 ns

30A

30V

-

-

-

-

-

-

-

-

Lead Free

Through Hole

600V

-

-

IPA60R180P7XKSA1 vs IPA60R125P6XKSA1
IPA60R600CPXKSA1

Infineon Technologies

-

Through Hole

TO-220-3 Full Pack

NO

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2008

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

28W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

600m Ω @ 3.3A, 10V

3.5V @ 220μA

550pF @ 100V

6.1A Tc

27nC @ 10V

600V

10V

±20V

TO-220AB

0.6Ohm

15A

600V

144 mJ

RoHS Compliant

-

-

-

-

-

3

Not Qualified

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

compliant

6.1A

IPA60R180P7XKSA1 vs IPA60R600CPXKSA1

Certification

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IPA60R1~~(30)~~
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Part Number	Manufacturers	Description	Stock	Price
IPA60R180P7XKSA1 DISTI #V99:2348_17072427	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3 Tab) TO-220FP T	361	1 $2.6226 10 $2.0131 100 $1.5945 500 $1.3883 1000 $1.1314
IPA60R180P7XKSA1 DISTI #V36:1790_17072427	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3 Tab) TO-220FP T	0
IPA60R180P7XKSA1 DISTI #IPA60R180P7XKSA1-ND	Infineon Technologies AG	MOSFET N-CHANNEL 650V 18A TO220 RoHS: Compliant	0	1 $2.53 10 $2.277 25 $2.1476 100 $1.8299 500 $1.50344 2500 $1.1598 5000 $1.14548
IPA60R180P7XKSA1 DISTI #32149293	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3 Tab) TO-220FP T	361	6 $2.6226 10 $2.0131 100 $1.5945 500 $1.3883 1000 $1.1314
IPA60R180P7XKSA1 DISTI #IPA60R180P7XKSA1	Infineon Technologies AG	HIGH POWER_NEW - Rail/Tube (Alt: IPA60R180P7XKSA1) RoHS: Compliant	0	500 $1.1779 1000 $1.1359 2000 $1.0949 3000 $1.0579 5000 $1.0389
IPA60R180P7XKSA1 DISTI #34AC1648	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-220FP, Transistor Pol	486	1 $2.42 10 $2.06 100 $1.65 500 $1.44 1000 $1.19
IPA60R180P7XKSA1 DISTI #726-IPA60R180P7XKSA1	Infineon Technologies AG	MOSFET RoHS: Compliant	48	1 $2.4 10 $2.04 100 $1.63 500 $1.43 1000 $1.18
IPA60R180P7XKSA1 DISTI #2784036	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-220FP RoHS: Compliant	486	1 $2.25 10 $2.11 100 $1.87 250 $1.76 500 $1.67 1000 $1.64
IPA60R180P7XKSA1 DISTI #2784036	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-220FP	521	1 $2.59 10 $1.95 100 $1.55

Infineon Technologies IPA60R180P7XKSA1

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