Infineon Technologies IPA60R180C7XKSA1

Name: IPA60R180C7XKSA1
Brand: Infineon Technologies
SKU: 2489232-IPA60R180C7XKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPA60R180C7XKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2489232-IPA60R180C7XKSA1

Description:: MOSFET N-CH 600V TO220-3

ECAD Model:

Datasheet:: IPA60R180C7XKSA1

Specifications

Infineon Technologies IPA60R180C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA60R180C7XKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ C7
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
29W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id
4V @ 260μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1080pF @ 400V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
9A
JEDEC-95 Code
TO-220AB
Max Dual Supply Voltage
600V
Drain Current-Max (Abs) (ID)
9A
Drain-source On Resistance-Max
0.18Ohm
Pulsed Drain Current-Max (IDM)
45A
Avalanche Energy Rating (Eas)
53 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPA60R180C7XKSA1 Description
IPA60R180C7XKSA1 is a 600v CoolMOS™ C7 Power Device. CoolMOS TM C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ IPA60R180C7XKSA1 combines the experience of the leading SJ MOSFET supplier with high-class innovation. The 600V IPA60R180C7XKSA1 is the first technology ever with Ros(on)*A below 10hm*mm2.

IPA60R180C7XKSA1 Features
Suitable for hard and soft switching (PFCandhighperformanceLLC) Increased MOSFET dv/dt ruggedness to 120V/ns Increased efficiency due to best-in-class FOMRDS(on)*Eoss and RDS(on)*Qg Best in class RDS(on)/package

IPA60R180C7XKSA1 Applications
Computing Server Telecom UPS and Solar Industrial Applications

IPA60R180C7XKSA1 More Descriptions

Trans MOSFET N-CH 600V 9A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 9A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 650V, 9A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 29W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

Product Comparison

The three parts on the right have similar specifications to IPA60R180C7XKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

Number of Pins

Max Operating Temperature

Min Operating Temperature

Subcategory

Terminal Form

Pin Count

Qualification Status

Element Configuration

Turn On Delay Time

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

Drain to Source Resistance

Rds On Max

Capacitance - Input

Height

Length

Width

ECCN Code

Reach Compliance Code

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
IPA60R180C7XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

SILICON

-55°C~150°C TJ

Tube

CoolMOS™ C7

2008

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

29W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

180m Ω @ 5.3A, 10V

4V @ 260μA

Halogen Free

1080pF @ 400V

9A Tc

24nC @ 10V

10V

±20V

9A

TO-220AB

600V

9A

0.18Ohm

45A

53 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPA60R520C6

Infineon Technologies

12 Weeks

-

-

TO-220-3

-

-

-

-

2011

-

yes

Active

-

3

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

1

-

29W

ENHANCEMENT MODE

ISOLATED

-

SWITCHING

-

-

Halogen Free

-

-

-

-

-

8.1A

TO-220AB

-

-

-

22A

-

RoHS Compliant

Lead Free

NO

3

150°C

-55°C

FET General Purpose Power

THROUGH-HOLE

3

Not Qualified

Single

13 ns

10ns

N-CHANNEL

14 ns

85 ns

20V

600V

METAL-OXIDE SEMICONDUCTOR

520mOhm

520 mΩ

512pF

16.15mm

10.65mm

4.85mm

-

-

-

-

IPA60R180C7XKSA1 vs IPA60R520C6
IPA60R600CPXKSA1

Infineon Technologies

-

-

Through Hole

TO-220-3 Full Pack

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2008

e3

yes

Obsolete

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

28W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

600m Ω @ 3.3A, 10V

3.5V @ 220μA

-

550pF @ 100V

6.1A Tc

27nC @ 10V

10V

±20V

-

TO-220AB

-

6.1A

0.6Ohm

15A

144 mJ

RoHS Compliant

-

NO

-

-

-

-

-

3

Not Qualified

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

EAR99

compliant

600V

600V

IPA60R180C7XKSA1 vs IPA60R600CPXKSA1
IPA60R280C6

Infineon Technologies

-

-

-

PG-TO220-3

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPA60R180C7XKSA1 vs IPA60R280C6

Certification

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Part Number	Manufacturers	Description	Stock	Price
IPA60R180C7XKSA1 DISTI #V36:1790_06377529	Infineon Technologies AG	Trans MOSFET N-CH 600V 9A 3-Pin(3 Tab) TO-220FP Tu	0
IPA60R180C7XKSA1 DISTI #IPA60R180C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO220-3 RoHS: Compliant	0	500 $1.87342
IPA60R180C7XKSA1 DISTI #SP001296216	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP0012 RoHS: Compliant	400	1 $1.99 10 $1.59 25 $1.29 50 $1.19 100 $1.19 500 $1.19 1000 $1.19
IPA60R180C7XKSA1 DISTI #IPA60R180C7XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube RoHS: Compliant	0	1 $1.39 10 $1.29 25 $1.29 50 $1.29 100 $1.29 500 $1.19 1000 $1.19
IPA60R180C7XKSA1 DISTI #IPA60R180C7	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPA60R RoHS: Compliant	0	500 $1.39029 1000 $1.35167 1500 $1.31514 2500 $1.28053 5000 $1.2639 12500 $1.24769 25000 $1.2319
IPA60R180C7XKSA1 DISTI #49AC0274	Infineon Technologies AG	MOSFET, N-CH, 650V, 9A, TO-220FP-3, Transistor Po	222	1 $2.86 10 $2.43 100 $1.94 500 $1.7 1000 $1.41
IPA60R180C7XKSA1 DISTI #726-IPA60R180C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	290	1 $2.86 10 $2.43 100 $1.94 500 $1.7 1000 $1.41
IPA60R180C7XKSA1 DISTI #IPA60R180C7	Infineon Technologies AG	N-Ch 600V 9A 29W 0,18R TO220-Fullpak RoHS: Compliant	0	1 $5.34 10 $2.34 50 $1.34 100 $1.23
IPA60R180C7XKSA1 DISTI #2839441	Infineon Technologies AG	MOSFET, N-CH, 650V, 9A, TO-220FP-3 RoHS: Compliant	358	1 $2.53 10 $1.91 100 $1.52 250 $1.43 500 $1.33
IPA60R180C7XKSA1 DISTI #XSKDRABV0033015	Infineon Technologies AG	RoHS: Compliant	400	230 $2.172 400 $2.028
IPA60R180C7XKSA1 DISTI #2839441	Infineon Technologies AG	MOSFET, N-CH, 650V, 9A, TO-220FP-3 RoHS: Compliant	358	1 $2.94 10 $2.75 100 $2.43 250 $2.3 500 $2.18 1000 $2.07

Infineon Technologies IPA60R180C7XKSA1

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