Fairchild/ON Semiconductor HGTG20N60A4D
- Part Number:
- HGTG20N60A4D
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2494640-HGTG20N60A4D
- Description:
- IGBT 600V 70A 290W TO247
- Datasheet:
- HGTG20N60A4D
Fairchild/ON Semiconductor HGTG20N60A4D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTG20N60A4D.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- Voltage - Rated DC600V
- Max Power Dissipation290W
- Current Rating70A
- Base Part NumberHGTG20N60
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation290W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time15 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time12ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time73 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current70A
- Reverse Recovery Time35 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.8V
- Max Breakdown Voltage600V
- Turn On Time28 ns
- Test Condition390V, 20A, 3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A
- Turn Off Time-Nom (toff)160 ns
- Gate Charge142nC
- Current - Collector Pulsed (Icm)280A
- Td (on/off) @ 25°C15ns/73ns
- Switching Energy105μJ (on), 150μJ (off)
- Height20.82mm
- Length15.87mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
HGTG20N60A4D Description
HGTG20N60A4D, provided by ON Semiconductor, is a type of N-channel IGBT with an anti-parallel hyperfast diode combining the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. It is optimized for high-frequency switch-mode power supplies, low conduction loss, and lower on-state voltage drop, as a result, it is well suited for various high-voltage switching applications operating at high frequencies.
HGTG20N60A4D Features
Anti-parallel hyperfast diode
Low conduction loss
Lower on-state voltage drop
High input impedance
HGTG20N60A4D Applications
Available in the TO-247 package
HGTG20N60A4D Applications
High-voltage switching applications operating at high frequencies
HGTG20N60A4D, provided by ON Semiconductor, is a type of N-channel IGBT with an anti-parallel hyperfast diode combining the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. It is optimized for high-frequency switch-mode power supplies, low conduction loss, and lower on-state voltage drop, as a result, it is well suited for various high-voltage switching applications operating at high frequencies.
HGTG20N60A4D Features
Anti-parallel hyperfast diode
Low conduction loss
Lower on-state voltage drop
High input impedance
HGTG20N60A4D Applications
Available in the TO-247 package
HGTG20N60A4D Applications
High-voltage switching applications operating at high frequencies
HGTG20N60A4D More Descriptions
Trans IGBT Chip N-CH 600V 70A 3-Pin(3 Tab) TO-247 Rail
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
The three parts on the right have similar specifications to HGTG20N60A4D.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingSubcategoryGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxPolarityContinuous Collector CurrentView Compare
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HGTG20N60A4DACTIVE, NOT REC (Last Updated: 2 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2011e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95600V290W70AHGTG20N601Single290WCOLLECTORStandard15 nsPOWER CONTROL12nsN-CHANNEL73 ns600V70A35 ns600V1.8V600V28 ns390V, 20A, 3 Ω, 15V2.7V @ 15V, 20A160 ns142nC280A15ns/73ns105μJ (on), 150μJ (off)20.82mm15.87mm4.82mmNo SVHCNoROHS3 CompliantLead Free-------
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ACTIVE (Last Updated: 2 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2011e3yesActive1 (Unlimited)3EAR99-LOW CONDUCTION LOSS8541.29.00.95600V290W70AHGTG20N601Single290WCOLLECTORStandard15 nsPOWER CONTROL12nsN-CHANNEL73 ns600V70A-600V1.8V-28 ns390V, 20A, 3 Ω, 15V2.7V @ 15V, 20A160 ns142nC280A15ns/73ns105μJ (on), 150μJ (off)20.82mm15.87mm4.82mmNo SVHCNoROHS3 CompliantLead FreeTinInsulated Gate BIP Transistors20V7V--
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ACTIVE, NOT REC (Last Updated: 2 days ago)7 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-40°C~150°C TJTube2011e3yesNot For New Designs1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95600V208W30AHGTG30N601Single208W-Standard40 nsMOTOR CONTROL45ns-320 ns600V63A60ns600V1.5V-85 ns-1.8V @ 15V, 30A550 ns162nC252A-1.05mJ (on), 2.5mJ (off)20.82mm15.87mm4.82mmNo SVHCNoROHS3 CompliantLead Free----NPN-
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ACTIVE, NOT REC (Last Updated: 2 days ago)4 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2002e3yesNot For New Designs1 (Unlimited)3EAR99-LOW CONDUCTION LOSS8541.29.00.95600V167W54AHGTG12N601Single167WCOLLECTORStandard17 nsPOWER CONTROL16nsN-CHANNEL96 ns600V54A30 ns600V2V-33 ns390V, 12A, 10 Ω, 15V2.7V @ 15V, 12A180 ns78nC96A17ns/96ns55μJ (on), 50μJ (off)20.82mm15.87mm4.82mmNo SVHCNoROHS3 CompliantLead FreeTin----60A
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