Global Power Technologies Group GP1M008A050CG

Name: GP1M008A050CG
Brand: Global Power Technologies Group
SKU: 2850789-GP1M008A050CG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP1M008A050CG

Manufacturer:: Global Power Technologies Group

Ventron No:: 2850789-GP1M008A050CG

Description:: MOSFET N-CH 500V 8A DPAK

ECAD Model:

Datasheet:: GP1M008A050CG

Specifications

Global Power Technologies Group GP1M008A050CG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP1M008A050CG.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
120W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
937pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP1M008A050CG Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 937pF @ 25V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

GP1M008A050CG Features
a 500V drain to source voltage (Vdss)

GP1M008A050CG Applications
There are a lot of SemiQ
GP1M008A050CG applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

GP1M008A050CG More Descriptions

MOSFET N-CH 500V 8A DPAK

Product Comparison

The three parts on the right have similar specifications to GP1M008A050CG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP1M008A050CG

Global Power Technologies Group

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Cut Tape (CT)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

120W Tc

N-Channel

850mOhm @ 4A, 10V

5V @ 250μA

937pF @ 25V

8A Tc

21nC @ 10V

500V

10V

±30V

-
GP1M009A070F

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

1.05Ohm @ 4.5A, 10V

4V @ 250μA

1944pF @ 25V

9A Tc

30nC @ 10V

700V

10V

±30V

GP1M008A050CG vs GP1M009A070F
GP1M008A080FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

40.3W Tc

N-Channel

1.4Ohm @ 4A, 10V

4V @ 250μA

1921pF @ 25V

8A Tc

46nC @ 10V

800V

10V

±30V

GP1M008A050CG vs GP1M008A080FH
GP1M006A065PH

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

120W Tc

N-Channel

1.6Ohm @ 2.75A, 10V

4V @ 250μA

1177pF @ 25V

5.5A Tc

17nC @ 10V

650V

10V

±30V

GP1M008A050CG vs GP1M006A065PH