Global Power Technologies Group GP1M012A060FH

Name: GP1M012A060FH
Brand: Global Power Technologies Group
SKU: 2850554-GP1M012A060FH
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP1M012A060FH

Manufacturer:: Global Power Technologies Group

Ventron No:: 2850554-GP1M012A060FH

Description:: MOSFET N-CH 600V 12A TO220F

ECAD Model:

Datasheet:: GP1M012A060FH

Specifications

Global Power Technologies Group GP1M012A060FH technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP1M012A060FH.

Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
53W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2308pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP1M012A060FH Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2308pF @ 25V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

GP1M012A060FH Features
a 600V drain to source voltage (Vdss)

GP1M012A060FH Applications
There are a lot of SemiQ
GP1M012A060FH applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

GP1M012A060FH More Descriptions

MOSFET N-CH 600V 12A TO220F

Product Comparison

The three parts on the right have similar specifications to GP1M012A060FH.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP1M012A060FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

53W Tc

N-Channel

650mOhm @ 6A, 10V

4V @ 250μA

2308pF @ 25V

12A Tc

39nC @ 10V

600V

10V

±30V

-
GP1M012A060H

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

231W Tc

N-Channel

650mOhm @ 6A, 10V

4V @ 250μA

2308pF @ 25V

12A Tc

39nC @ 10V

600V

10V

±30V

GP1M012A060FH vs GP1M012A060H
GP1M008A080FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

40.3W Tc

N-Channel

1.4Ohm @ 4A, 10V

4V @ 250μA

1921pF @ 25V

8A Tc

46nC @ 10V

800V

10V

±30V

GP1M012A060FH vs GP1M008A080FH
GP1M010A080N

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.05Ohm @ 5A, 10V

4V @ 250μA

2336pF @ 25V

10A Tc

53nC @ 10V

900V

10V

±30V

GP1M012A060FH vs GP1M010A080N