Global Power Technologies Group GP1M008A080FH

Name: GP1M008A080FH
Brand: Global Power Technologies Group
SKU: 2850404-GP1M008A080FH
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP1M008A080FH

Manufacturer:: Global Power Technologies Group

Ventron No:: 2850404-GP1M008A080FH

Description:: MOSFET N-CH 800V 8A TO220F

ECAD Model:

Datasheet:: GP1M008A080FH

Specifications

Global Power Technologies Group GP1M008A080FH technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP1M008A080FH.

Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
40.3W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1921pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP1M008A080FH Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1921pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

GP1M008A080FH Features
a 800V drain to source voltage (Vdss)

GP1M008A080FH Applications
There are a lot of SemiQ
GP1M008A080FH applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

GP1M008A080FH More Descriptions

MOSFET N-CH 800V 8A TO220F

Product Comparison

The three parts on the right have similar specifications to GP1M008A080FH.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP1M008A080FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

40.3W Tc

N-Channel

1.4Ohm @ 4A, 10V

4V @ 250μA

1921pF @ 25V

8A Tc

46nC @ 10V

800V

10V

±30V

-
GP1M008A050CG

Global Power Technologies Group

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~150°C TJ

Cut Tape (CT)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

120W Tc

N-Channel

850mOhm @ 4A, 10V

5V @ 250μA

937pF @ 25V

8A Tc

21nC @ 10V

500V

10V

±30V

GP1M008A080FH vs GP1M008A050CG
GP1M012A060H

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

231W Tc

N-Channel

650mOhm @ 6A, 10V

4V @ 250μA

2308pF @ 25V

12A Tc

39nC @ 10V

600V

10V

±30V

GP1M008A080FH vs GP1M012A060H
GP1M010A080N

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.05Ohm @ 5A, 10V

4V @ 250μA

2336pF @ 25V

10A Tc

53nC @ 10V

900V

10V

±30V

GP1M008A080FH vs GP1M010A080N