Global Power Technologies Group GP1M010A080N
- Part Number:
- GP1M010A080N
- Manufacturer:
- Global Power Technologies Group
- Ventron No:
- 2850388-GP1M010A080N
- Description:
- MOSFET N-CH 900V 10A TO3PN
- Datasheet:
- GP1M010A080N
Global Power Technologies Group GP1M010A080N technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP1M010A080N.
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Supplier Device PackageTO-3PN
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max312W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.05Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2336pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
- Drain to Source Voltage (Vdss)900V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
GP1M010A080N Overview
A device's maximum input capacitance is 2336pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
GP1M010A080N Features
a 900V drain to source voltage (Vdss)
GP1M010A080N Applications
There are a lot of SemiQ
GP1M010A080N applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2336pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
GP1M010A080N Features
a 900V drain to source voltage (Vdss)
GP1M010A080N Applications
There are a lot of SemiQ
GP1M010A080N applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
GP1M010A080N More Descriptions
MOSFET N-CH 900V 10A TO3PN
The three parts on the right have similar specifications to GP1M010A080N.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)View Compare
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GP1M010A080NThrough HoleTO-3P-3, SC-65-3TO-3PN-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)312W TcN-Channel1.05Ohm @ 5A, 10V4V @ 250μA2336pF @ 25V10A Tc53nC @ 10V900V10V±30V-
-
Through HoleTO-220-3 Full PackTO-220F-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)53W TcN-Channel650mOhm @ 6A, 10V4V @ 250μA2308pF @ 25V12A Tc39nC @ 10V600V10V±30V
-
Through HoleTO-220-3TO-220-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)158W TcN-Channel670mOhm @ 5.5A, 10V4V @ 250μA1423pF @ 25V11A Tc28nC @ 10V500V10V±30V
-
Through HoleTO-220-3 Full PackTO-220F-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)39W TcN-Channel1.6Ohm @ 2.75A, 10V4V @ 250μA1177pF @ 25V5.5A Tc17nC @ 10V650V10V±30V
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