Global Power Technologies Group GP1M011A050H

Name: GP1M011A050H
Brand: Global Power Technologies Group
SKU: 2850494-GP1M011A050H
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP1M011A050H

Manufacturer:: Global Power Technologies Group

Ventron No:: 2850494-GP1M011A050H

Description:: MOSFET N-CH 500V 11A TO220

ECAD Model:

Datasheet:: GP1M011A050H

Specifications

Global Power Technologies Group GP1M011A050H technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP1M011A050H.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
158W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
670mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP1M011A050H Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1423pF @ 25V maximal input capacitance.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

GP1M011A050H Features
a 500V drain to source voltage (Vdss)

GP1M011A050H Applications
There are a lot of SemiQ
GP1M011A050H applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

GP1M011A050H More Descriptions

MOSFET N-CH 500V 11A TO220

Product Comparison

The three parts on the right have similar specifications to GP1M011A050H.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP1M011A050H

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

158W Tc

N-Channel

670mOhm @ 5.5A, 10V

4V @ 250μA

1423pF @ 25V

11A Tc

28nC @ 10V

500V

10V

±30V

-
GP1M012A060FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

53W Tc

N-Channel

650mOhm @ 6A, 10V

4V @ 250μA

2308pF @ 25V

12A Tc

39nC @ 10V

600V

10V

±30V

GP1M011A050H vs GP1M012A060FH
GP1M010A080N

Global Power Technologies Group

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

312W Tc

N-Channel

1.05Ohm @ 5A, 10V

4V @ 250μA

2336pF @ 25V

10A Tc

53nC @ 10V

900V

10V

±30V

GP1M011A050H vs GP1M010A080N
GP1M006A065FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

39W Tc

N-Channel

1.6Ohm @ 2.75A, 10V

4V @ 250μA

1177pF @ 25V

5.5A Tc

17nC @ 10V

650V

10V

±30V

GP1M011A050H vs GP1M006A065FH