FGH60N60UFDTU

Fairchild/ON Semiconductor FGH60N60UFDTU

Part Number:
FGH60N60UFDTU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3072020-FGH60N60UFDTU
Description:
IGBT 600V 120A 298W TO247
ECAD Model:
Datasheet:
FGH60N60UFDTU

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Specifications
Fairchild/ON Semiconductor FGH60N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH60N60UFDTU.
  • Factory Lead Time
    5 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    298W
  • Base Part Number
    FGH60N60
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    23 ns
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    130 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    47ns
  • JEDEC-95 Code
    TO-247AB
  • Collector Emitter Breakdown Voltage
    600V
  • Current - Collector (Ic) (Max)
    120A
  • Collector Emitter Saturation Voltage
    600V
  • Turn On Time
    83 ns
  • Test Condition
    400V, 60A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 60A
  • Turn Off Time-Nom (toff)
    204 ns
  • IGBT Type
    Field Stop
  • Gate Charge
    188nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    23ns/130ns
  • Switching Energy
    1.81mJ (on), 810μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    80ns
  • Height
    20.6mm
  • Length
    15.6mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGH60N60UFDTU Description ON Semiconductor's FGH60N60UFDTU field stop IGBTs use revolutionary field stop IGBT technology to provide the best performance for solar inverter, UPS, welder, and PFC applications that require low conduction and switching losses.
FGH60N60UFDTU Features High Current Capability
High Input Impedance
Fast Switching
Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A
This Device is Pb?Free and is RoHS Compliant
FGH60N60UFDTU Applications Solar Inverter
UPS
Welder
PFC


FGH60N60UFDTU More Descriptions
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3 Tab) TO-247AB Rail
FGH60N60UFD Series 600 V 120 A Flange Mount Field Stop IGBT - TO-247
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:298W
Product Comparison
The three parts on the right have similar specifications to FGH60N60UFDTU.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    HTS Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Contact Plating
    JESD-609 Code
    Additional Feature
    Rise Time-Max
    Power - Max
    Voltage - Collector Emitter Breakdown (Max):
    Vce(on) (Max) @ Vge, Ic:
    Test Condition:
    Td (on/off) @ 25°C:
    Switching Energy:
    Supplier Device Package:
    Series:
    Reverse Recovery Time (trr):
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Type:
    IGBT Type:
    Gate Charge:
    Current - Collector Pulsed (Icm):
    Current - Collector (Ic) (Max):
    View Compare
  • FGH60N60UFDTU
    FGH60N60UFDTU
    5 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2015
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    298W
    FGH60N60
    1
    Single
    COLLECTOR
    Standard
    23 ns
    POWER CONTROL
    N-CHANNEL
    130 ns
    600V
    60A
    47ns
    TO-247AB
    600V
    120A
    600V
    83 ns
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    204 ns
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    20V
    6.5V
    80ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH60N60SMD
    5 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~175°C TJ
    Tube
    2013
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    600W
    FGH60N60
    1
    Single
    COLLECTOR
    Standard
    27 ns
    POWER CONTROL
    N-CHANNEL
    146 ns
    600V
    120A
    39 ns
    TO-247AB
    600V
    -
    1.9V
    59 ns
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    163 ns
    Field Stop
    189nC
    180A
    18ns/104ns
    1.26mJ (on), 450μJ (off)
    20V
    6V
    68ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 5 days ago)
    Tin
    e3
    LOW CONDUCTION LOSS
    70ns
    600W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH60T65SHD_F155
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    650V
    2.1V @ 15V, 60A
    400V, 60A, 6 Ohm, 15V
    26ns/87ns
    1.69mJ (on), 630µJ (off)
    TO-247 Long Leads
    -
    34.6ns
    349W
    Tube
    TO-247-3
    -55°C ~ 175°C (TJ)
    Through Hole
    Standard
    Trench Field Stop
    102nC
    180A
    120A
  • FGH60N60SMD_F085
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600V
    2.5V @ 15V, 60A
    400V, 60A, 3 Ohm, 15V
    22ns/116ns
    1.59mJ (on), 390µJ (off)
    TO-247-3
    Automotive, AEC-Q101
    42ns
    600W
    Tube
    TO-247-3
    -55°C ~ 175°C (TJ)
    Through Hole
    Standard
    Field Stop
    280nC
    180A
    120A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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