Fairchild/ON Semiconductor FGH60N60SFDTU
- Part Number:
- FGH60N60SFDTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2496593-FGH60N60SFDTU
- Description:
- IGBT 600V 120A 378W TO247
- Datasheet:
- FGH60N60SFDTU
Fairchild/ON Semiconductor FGH60N60SFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH60N60SFDTU.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time5 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation378W
- Base Part NumberFGH60N60
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max378W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current120A
- Reverse Recovery Time47 ns
- JEDEC-95 CodeTO-247AB
- Collector Emitter Breakdown Voltage600V
- Turn On Time66 ns
- Test Condition400V, 60A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
- Turn Off Time-Nom (toff)187 ns
- IGBT TypeField Stop
- Gate Charge198nC
- Current - Collector Pulsed (Icm)180A
- Td (on/off) @ 25°C22ns/134ns
- Switching Energy1.79mJ (on), 670μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)62ns
- Height20.6mm
- Length15.6mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FGH60N60SFDTU Description
Using novel field stop IGBT technology, ON Semiconductor's field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, and PFC applications where low conduction and switching losses are essential.
FGH60N60SFDTU Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A High Input Impedance Fast Switching This Device is Pb?Free and is RoHS Compliant
FGH60N60SFDTU Applications Solar Inverter, UPS, Welder, PFC
FGH60N60SFDTU Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A High Input Impedance Fast Switching This Device is Pb?Free and is RoHS Compliant
FGH60N60SFDTU Applications Solar Inverter, UPS, Welder, PFC
FGH60N60SFDTU More Descriptions
IGBT 600V 60A 378W TO247 / Trans IGBT Chip N-CH 600V 120A 378000mW 3-Pin(3 Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB
IGBT Transistors N-Ch/ 60A 600V FS
Fspigbt To247 60A 600V Rohs Compliant: Yes
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essentia
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB
IGBT Transistors N-Ch/ 60A 600V FS
Fspigbt To247 60A 600V Rohs Compliant: Yes
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essentia
The three parts on the right have similar specifications to FGH60N60SFDTU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthRadiation HardeningRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce(on) (Max) @ Vge, Ic:Test Condition:Td (on/off) @ 25°C:Switching Energy:Supplier Device Package:Series:Reverse Recovery Time (trr):Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Type:IGBT Type:Gate Charge:Current - Collector Pulsed (Icm):Current - Collector (Ic) (Max):Supplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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FGH60N60SFDTUACTIVE (Last Updated: 5 days ago)5 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTube2017e3yesActive1 (Unlimited)3EAR99Tin (Sn)LOW CONDUCTION LOSS8541.29.00.95Insulated Gate BIP Transistors378WFGH60N601SingleCOLLECTORStandard378WPOWER CONTROLN-CHANNEL600V120A47 nsTO-247AB600V66 ns400V, 60A, 5 Ω, 15V2.9V @ 15V, 60A187 nsField Stop198nC180A22ns/134ns1.79mJ (on), 670μJ (off)20V6.5V62ns20.6mm15.6mm4.7mmNoROHS3 Compliant----------------------
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----------------------------------------------------650V2.1V @ 15V, 60A400V, 60A, 6 Ohm, 15V26ns/87ns1.69mJ (on), 630µJ (off)TO-247 Long Leads-34.6ns349WTubeTO-247-3-55°C ~ 175°C (TJ)Through HoleStandardTrench Field Stop102nC180A120A---
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---Through HoleTO-247-3----55°C~150°C TJTube2003--Obsolete1 (Unlimited)-----------Standard625W--------390V, 40A, 3Ohm, 15V2.5V @ 15V, 40A--140nC320A18ns/70ns400μJ (on), 310μJ (off)--------------------------TO-247-3600V75A
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----------------------------------------------------600V2.5V @ 15V, 60A400V, 60A, 3 Ohm, 15V22ns/116ns1.59mJ (on), 390µJ (off)TO-247-3Automotive, AEC-Q10142ns600WTubeTO-247-3-55°C ~ 175°C (TJ)Through HoleStandardField Stop280nC180A120A---
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