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FGH60N60SMD

Fairchild/ON Semiconductor FGH60N60SMD

Part Number:
FGH60N60SMD
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2854906-FGH60N60SMD
Description:
IGBT 600V 120A 600W TO247
ECAD Model:
Datasheet:
FGH60N60SMD

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Specifications
Fairchild/ON Semiconductor FGH60N60SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH60N60SMD.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    5 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    600W
  • Base Part Number
    FGH60N60
  • Number of Elements
    1
  • Rise Time-Max
    70ns
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    27 ns
  • Power - Max
    600W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    146 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    120A
  • Reverse Recovery Time
    39 ns
  • JEDEC-95 Code
    TO-247AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.9V
  • Turn On Time
    59 ns
  • Test Condition
    400V, 60A, 3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 60A
  • Turn Off Time-Nom (toff)
    163 ns
  • IGBT Type
    Field Stop
  • Gate Charge
    189nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    18ns/104ns
  • Switching Energy
    1.26mJ (on), 450μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    68ns
  • Height
    20.6mm
  • Length
    15.6mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGH60N60SMD Features   Maximum junction temperature : TJ =175 °C Positive temperaure co-efficient for easy parallel operating High current capability Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A High input impedance Fast switching: EOFF =7.5uJ/A Tightened parameter distribution RoHS compliant   FGH60N60SMD  Applications
Uninterruptible Power Supply Energy Generation & Distribution Other Industrial   FGH60N60SMD Description   FGH60N60SMD On Semiconductor's new series of second-generation field-stop IGBT uses the new field-stop IGBT technology, which provides the best performance for solar inverter, UPS, welder, telecom, ESS and PFC applications, which are essential for low conduction and switching loss.  
FGH60N60SMD More Descriptions
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3 Tab) TO-247 Rail
FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
Product Comparison
The three parts on the right have similar specifications to FGH60N60SMD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Rise Time-Max
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Current - Collector (Ic) (Max)
    Voltage - Collector Emitter Breakdown (Max):
    Vce(on) (Max) @ Vge, Ic:
    Test Condition:
    Td (on/off) @ 25°C:
    Switching Energy:
    Supplier Device Package:
    Series:
    Reverse Recovery Time (trr):
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Type:
    IGBT Type:
    Gate Charge:
    Current - Collector Pulsed (Icm):
    Current - Collector (Ic) (Max):
    Terminal Finish
    View Compare
  • FGH60N60SMD
    FGH60N60SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    5 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~175°C TJ
    Tube
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    8541.29.00.95
    Insulated Gate BIP Transistors
    600W
    FGH60N60
    1
    70ns
    Single
    COLLECTOR
    Standard
    27 ns
    600W
    POWER CONTROL
    N-CHANNEL
    146 ns
    600V
    120A
    39 ns
    TO-247AB
    600V
    1.9V
    59 ns
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    163 ns
    Field Stop
    189nC
    180A
    18ns/104ns
    1.26mJ (on), 450μJ (off)
    20V
    6V
    68ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGH60N60UFDTU
    FGH60N60UFDTU
    Fairchild/ON Semiconductor
    -
    5 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2015
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    8541.29.00.95
    Insulated Gate BIP Transistors
    298W
    FGH60N60
    1
    -
    Single
    COLLECTOR
    Standard
    23 ns
    -
    POWER CONTROL
    N-CHANNEL
    130 ns
    600V
    60A
    47ns
    TO-247AB
    600V
    600V
    83 ns
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    204 ns
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    20V
    6.5V
    80ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    120A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FGH60N60SMD vs FGH60N60UFDTU
  • FGH60N60UFDTU_F085
    FGH60N60UFDTU_F085
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600V
    2.9V @ 15V, 60A
    400V, 60A, 5 Ohm, 15V
    29ns/138ns
    2.47mJ (on), 810µJ (off)
    TO-247
    Automotive, AEC-Q101
    76ns
    298W
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    Standard
    Field Stop
    192nC
    180A
    120A
    -
    FGH60N60SMD vs FGH60N60UFDTU_F085
  • FGH60N60SFDTU
    FGH60N60SFDTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    5 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    2017
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    LOW CONDUCTION LOSS
    8541.29.00.95
    Insulated Gate BIP Transistors
    378W
    FGH60N60
    1
    -
    Single
    COLLECTOR
    Standard
    -
    378W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    120A
    47 ns
    TO-247AB
    600V
    -
    66 ns
    400V, 60A, 5 Ω, 15V
    2.9V @ 15V, 60A
    187 ns
    Field Stop
    198nC
    180A
    22ns/134ns
    1.79mJ (on), 670μJ (off)
    20V
    6.5V
    62ns
    20.6mm
    15.6mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin (Sn)
    FGH60N60SMD vs FGH60N60SFDTU
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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