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FGH60N6S2

Fairchild/ON Semiconductor FGH60N6S2

Part Number:
FGH60N6S2
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2494927-FGH60N6S2
Description:
IGBT 600V 75A 625W TO247
ECAD Model:
Datasheet:
FGH60N6S2

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Specifications
Fairchild/ON Semiconductor FGH60N6S2 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH60N6S2.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Input Type
    Standard
  • Power - Max
    625W
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    75A
  • Test Condition
    390V, 40A, 3Ohm, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 40A
  • Gate Charge
    140nC
  • Current - Collector Pulsed (Icm)
    320A
  • Td (on/off) @ 25°C
    18ns/70ns
  • Switching Energy
    400μJ (on), 310μJ (off)
Description
FGH60N6S2 Description
The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched-mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential. SMPS II LGC devices have been specially designed for: push-pull circuits, full-bridge topologies, half-bridge topologies, uninterruptible power supplies, power factor correction (PFC) circuits, zero voltage and zero current switching circuits.

FGH60N6S2 Features
Low Conduction Loss
600V Switching SOA Capability
100kHz Operation at 390V, 52A
200kHZ Operation at 390V, 31A
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
Low Gate Charge . . . . . . . . 140nC at VGE = 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

FGH60N6S2 Applications
Push-Pull circuits
Full bridge topologies
Half bridge topologies
Uninterruptible power supplies
Power Factor Correction (PFC) circuits
Zero voltage and zero current switching circuits
FGH60N6S2 More Descriptions
IGBT 600V 75A 625W TO247
IGBT; Collector Emitter Saturation Voltage, Vce(sat):1.9V; Package/Case:3-TO-247; Leaded Process Compatible:No; C-E Breakdown Voltage:600V; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Current Rating:75A RoHS Compliant: No
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.5V; Power Dissipation:625W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:320A; No. of Pins:3; Pin Format:GCE; Power, Pd:625W; Power, Ptot:625W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Rise:15ns; Transistors, No. of:1
Product Comparison
The three parts on the right have similar specifications to FGH60N6S2.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Input Type
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    HTS Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Element Configuration
    Case Connection
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Contact Plating
    JESD-609 Code
    Additional Feature
    Rise Time-Max
    Voltage - Collector Emitter Breakdown (Max):
    Vce(on) (Max) @ Vge, Ic:
    Test Condition:
    Td (on/off) @ 25°C:
    Switching Energy:
    Supplier Device Package:
    Series:
    Reverse Recovery Time (trr):
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Type:
    IGBT Type:
    Gate Charge:
    Current - Collector Pulsed (Icm):
    Current - Collector (Ic) (Max):
    View Compare
  • FGH60N6S2
    FGH60N6S2
    Fairchild/ON Semiconductor
    Through Hole
    TO-247-3
    TO-247-3
    -55°C~150°C TJ
    Tube
    2003
    Obsolete
    1 (Unlimited)
    Standard
    625W
    600V
    75A
    390V, 40A, 3Ohm, 15V
    2.5V @ 15V, 40A
    140nC
    320A
    18ns/70ns
    400μJ (on), 310μJ (off)
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  • FGH60N60UFDTU
    FGH60N60UFDTU
    Fairchild/ON Semiconductor
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    2015
    Active
    1 (Unlimited)
    Standard
    -
    -
    120A
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    5 Weeks
    Through Hole
    3
    6.39g
    SILICON
    yes
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    298W
    FGH60N60
    1
    Single
    COLLECTOR
    23 ns
    POWER CONTROL
    N-CHANNEL
    130 ns
    600V
    60A
    47ns
    TO-247AB
    600V
    600V
    83 ns
    204 ns
    Field Stop
    20V
    6.5V
    80ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
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    FGH60N6S2 vs FGH60N60UFDTU
  • FGH60N60SMD
    FGH60N60SMD
    Fairchild/ON Semiconductor
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    2013
    Active
    1 (Unlimited)
    Standard
    600W
    -
    -
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    189nC
    180A
    18ns/104ns
    1.26mJ (on), 450μJ (off)
    5 Weeks
    Through Hole
    3
    6.39g
    SILICON
    yes
    3
    EAR99
    8541.29.00.95
    Insulated Gate BIP Transistors
    600W
    FGH60N60
    1
    Single
    COLLECTOR
    27 ns
    POWER CONTROL
    N-CHANNEL
    146 ns
    600V
    120A
    39 ns
    TO-247AB
    600V
    1.9V
    59 ns
    163 ns
    Field Stop
    20V
    6V
    68ns
    20.6mm
    15.6mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 5 days ago)
    Tin
    e3
    LOW CONDUCTION LOSS
    70ns
    -
    -
    -
    -
    -
    -
    -
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    -
    -
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    -
    -
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    -
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    FGH60N6S2 vs FGH60N60SMD
  • FGH60N60SMD_F085
    FGH60N60SMD_F085
    Fairchild/ON Semiconductor
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    -
    -
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    -
    -
    600V
    2.5V @ 15V, 60A
    400V, 60A, 3 Ohm, 15V
    22ns/116ns
    1.59mJ (on), 390µJ (off)
    TO-247-3
    Automotive, AEC-Q101
    42ns
    600W
    Tube
    TO-247-3
    -55°C ~ 175°C (TJ)
    Through Hole
    Standard
    Field Stop
    280nC
    180A
    120A
    FGH60N6S2 vs FGH60N60SMD_F085
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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