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FGA6540WDF

Fairchild/ON Semiconductor FGA6540WDF

Part Number:
FGA6540WDF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3587254-FGA6540WDF
Description:
IGBT 650V 80A 238W TO-3PN
ECAD Model:
Datasheet:
FGA6540WDF

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Specifications
Fairchild/ON Semiconductor FGA6540WDF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA6540WDF.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Weight
    6.401g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Max Power Dissipation
    238W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    238W
  • Collector Emitter Voltage (VCEO)
    2.3V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    101 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.8V
  • Test Condition
    400V, 40A, 6 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    55.5nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    16.8ns/54.4ns
  • Switching Energy
    1.37mJ (on), 250μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
Description
The FGA6540WDF is a 650V, 40A Field Stop Trench IGBT. Fairchild's new range of field stop 3rd generation IGBTs, which utilize cutting-edge field stop technology, provide the best performance for industrial and welder applications where minimal conduction and switching losses are crucial.

Features
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 40 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability

Applications
Welder and Industrial Application
Power Factor Correction
AC and DC Motor Drives Offering Speed Control
Chopper and Inverters
Solar Inverters
FGA6540WDF More Descriptions
Trans IGBT Chip N=-CH 650V 80A 238000mW 3-Pin(3 Tab) TO-3PN Rail
IGBT, 650 V, 40 A Field Stop Trench
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors FS3TIGBT TO3PN 40A 650V
FAST & ULTRAFAST RECOVERY RECTIFIERS;
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for welder application where low conduction and switching losses are essential.
Product Comparison
The three parts on the right have similar specifications to FGA6540WDF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    HTS Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Number of Pins
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Subcategory
    Number of Elements
    Rise Time-Max
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Turn On Time
    Turn Off Time-Nom (toff)
    REACH SVHC
    View Compare
  • FGA6540WDF
    FGA6540WDF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~175°C TJ
    Tube
    2016
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    238W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    Standard
    238W
    2.3V
    80A
    101 ns
    650V
    1.8V
    400V, 40A, 6 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    55.5nC
    120A
    16.8ns/54.4ns
    1.37mJ (on), 250μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGA60N65SMD
    FGA60N65SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    600W
    -
    -
    Single
    Standard
    600W
    650V
    120A
    47 ns
    650V
    1.9V
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    Field Stop
    189nC
    180A
    18ns/104ns
    1.54mJ (on), 450μJ (off)
    ROHS3 Compliant
    3
    SILICON
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1
    70ns
    18 ns
    POWER CONTROL
    N-CHANNEL
    104 ns
    20V
    6V
    68ns
    20.1mm
    15.8mm
    5mm
    No
    Lead Free
    -
    -
    -
    FGA6540WDF vs FGA60N65SMD
  • FGA60N60UFDTU
    FGA60N60UFDTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    298W
    -
    -
    Single
    Standard
    298W
    600V
    120A
    47 ns
    600V
    600V
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    ROHS3 Compliant
    3
    SILICON
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    20V
    6.5V
    80ns
    20.1mm
    15.8mm
    5mm
    No
    -
    83 ns
    204 ns
    No SVHC
    FGA6540WDF vs FGA60N60UFDTU
  • FGA6065ADF
    FGA6065ADF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~175°C TJ
    Tube
    2016
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    306W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    Standard
    306W
    2.3V
    120A
    110 ns
    650V
    -
    400V, 60A, 6 Ω, 15V
    2.3V @ 15V, 60A
    Trench Field Stop
    84nC
    180A
    25.6ns/71ns
    2.46mJ (on), 520μJ (off)
    ROHS3 Compliant
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FGA6540WDF vs FGA6065ADF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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