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FGA60N60UFDTU

Fairchild/ON Semiconductor FGA60N60UFDTU

Part Number:
FGA60N60UFDTU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2854583-FGA60N60UFDTU
Description:
IGBT 600V 120A 298W TO3P
ECAD Model:
Datasheet:
FGA60N60UFDTU

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Specifications
Fairchild/ON Semiconductor FGA60N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA60N60UFDTU.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.401g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    298W
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    298W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    120A
  • Reverse Recovery Time
    47 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    600V
  • Turn On Time
    83 ns
  • Test Condition
    400V, 60A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 60A
  • Turn Off Time-Nom (toff)
    204 ns
  • IGBT Type
    Field Stop
  • Gate Charge
    188nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    23ns/130ns
  • Switching Energy
    1.81mJ (on), 810μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    80ns
  • Height
    20.1mm
  • Length
    15.8mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FGA60N60UFDTU Description

FGA60N60UFDTU is an IGBT Transistor with N-Channel in TO-3P-3L package. Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. This IGBT Transistor has an operating temperature range of -55°C to 150°C.?

FGA60N60UFDTU Features

High Current Capability
Low saturation voltage: VCE(sat) =1.9V @ IC = 60A
High Input Impedance
Fast switching: EOFF =14uJ/A
RoHS compliant
FGA60N60UFDTU Applications

Solar Inverter,
UPS,
Welder,
PFC
Energy Generation & Distribution
FGA60N60UFDTU More Descriptions
Trans IGBT Chip N=-CH 600V 120A 298000mW 3-Pin(3 Tab) TO-3PN Tube
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT,N CH,W DIODE,600V,120A,TO3PN; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:298W
Product Comparison
The three parts on the right have similar specifications to FGA60N60UFDTU.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Max Power Dissipation
    Number of Elements
    Element Configuration
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Rise Time-Max
    Turn On Delay Time
    Turn-Off Delay Time
    Lead Free
    View Compare
  • FGA60N60UFDTU
    FGA60N60UFDTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOW CONDUCTION LOSS
    8541.29.00.95
    Insulated Gate BIP Transistors
    298W
    1
    Single
    Standard
    298W
    POWER CONTROL
    N-CHANNEL
    600V
    120A
    47 ns
    600V
    600V
    83 ns
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    204 ns
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    20V
    6.5V
    80ns
    20.1mm
    15.8mm
    5mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • FGA6530WDF
    FGA6530WDF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -
    -55°C~175°C TJ
    Tube
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    8541.29.00.95
    -
    176W
    -
    Single
    Standard
    176W
    -
    -
    2.2V
    60A
    81 ns
    650V
    -
    -
    400V, 30A, 6 Ω, 15V
    2.2V @ 15V, 30A
    -
    Trench Field Stop
    37.4nC
    90A
    12ns/42.4ns
    960μJ (on), 162μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    FGA60N60UFDTU vs FGA6530WDF
  • FGA60N65SMD
    FGA60N65SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    SILICON
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOW CONDUCTION LOSS
    8541.29.00.95
    Insulated Gate BIP Transistors
    600W
    1
    Single
    Standard
    600W
    POWER CONTROL
    N-CHANNEL
    650V
    120A
    47 ns
    650V
    1.9V
    -
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    -
    Field Stop
    189nC
    180A
    18ns/104ns
    1.54mJ (on), 450μJ (off)
    20V
    6V
    68ns
    20.1mm
    15.8mm
    5mm
    -
    No
    ROHS3 Compliant
    -
    -
    70ns
    18 ns
    104 ns
    Lead Free
    FGA60N60UFDTU vs FGA60N65SMD
  • FGA6065ADF
    FGA6065ADF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -
    -55°C~175°C TJ
    Tube
    2016
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    8541.29.00.95
    -
    306W
    -
    Single
    Standard
    306W
    -
    -
    2.3V
    120A
    110 ns
    650V
    -
    -
    400V, 60A, 6 Ω, 15V
    2.3V @ 15V, 60A
    -
    Trench Field Stop
    84nC
    180A
    25.6ns/71ns
    2.46mJ (on), 520μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    FGA60N60UFDTU vs FGA6065ADF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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