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FGA6065ADF

Fairchild/ON Semiconductor FGA6065ADF

Part Number:
FGA6065ADF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2854505-FGA6065ADF
Description:
IGBT 650V 120A 306W TO3P
ECAD Model:
Datasheet:
FGA6065ADF

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Specifications
Fairchild/ON Semiconductor FGA6065ADF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA6065ADF.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.401g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Max Power Dissipation
    306W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    306W
  • Collector Emitter Voltage (VCEO)
    2.3V
  • Max Collector Current
    120A
  • Reverse Recovery Time
    110 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Test Condition
    400V, 60A, 6 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 60A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    84nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    25.6ns/71ns
  • Switching Energy
    2.46mJ (on), 520μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
FGA6065ADF Description
Field Stop Trench third generation IGBT, which has exceptionally low Rds(on) and substantially faster switching characteristics for exceptional efficiency, was used in this ADF IGBT series. Furthermore, this type of technology is fully tuned for a range of PFC (Power Factor Correction) topologies, including Single boost, Multi channel interleaved, etc., with switching performance of over 20KHz. Super Low Thermal Resistance for Wider SOA for System Stability is provided by TO3P package.

FGA6065ADF Features
Maximum Junction Temperature : TJ = 175 °C
Positive Temperaure Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
100% of the Parts Tested for ILM (1)
High Input Impedance
Fast Switching
RoHS Compliant

FGA6065ADF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FGA6065ADF More Descriptions
Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3 Tab) TO-3PN Rail
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.
Product Comparison
The three parts on the right have similar specifications to FGA6065ADF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    HTS Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Subcategory
    Number of Elements
    Rise Time-Max
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Turn On Time
    Turn Off Time-Nom (toff)
    REACH SVHC
    View Compare
  • FGA6065ADF
    FGA6065ADF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -55°C~175°C TJ
    Tube
    2016
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    306W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    Standard
    306W
    2.3V
    120A
    110 ns
    650V
    400V, 60A, 6 Ω, 15V
    2.3V @ 15V, 60A
    Trench Field Stop
    84nC
    180A
    25.6ns/71ns
    2.46mJ (on), 520μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGA6530WDF
    FGA6530WDF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -55°C~175°C TJ
    Tube
    2015
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    176W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    Standard
    176W
    2.2V
    60A
    81 ns
    650V
    400V, 30A, 6 Ω, 15V
    2.2V @ 15V, 30A
    Trench Field Stop
    37.4nC
    90A
    12ns/42.4ns
    960μJ (on), 162μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FGA6065ADF vs FGA6530WDF
  • FGA60N65SMD
    FGA60N65SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    600W
    -
    -
    Single
    Standard
    600W
    650V
    120A
    47 ns
    650V
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    Field Stop
    189nC
    180A
    18ns/104ns
    1.54mJ (on), 450μJ (off)
    ROHS3 Compliant
    SILICON
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1
    70ns
    18 ns
    POWER CONTROL
    N-CHANNEL
    104 ns
    1.9V
    20V
    6V
    68ns
    20.1mm
    15.8mm
    5mm
    No
    Lead Free
    -
    -
    -
    FGA6065ADF vs FGA60N65SMD
  • FGA60N60UFDTU
    FGA60N60UFDTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    298W
    -
    -
    Single
    Standard
    298W
    600V
    120A
    47 ns
    600V
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    ROHS3 Compliant
    SILICON
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    600V
    20V
    6.5V
    80ns
    20.1mm
    15.8mm
    5mm
    No
    -
    83 ns
    204 ns
    No SVHC
    FGA6065ADF vs FGA60N60UFDTU
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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