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FGA6560WDF

Fairchild/ON Semiconductor FGA6560WDF

Part Number:
FGA6560WDF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3072027-FGA6560WDF
Description:
IGBT 650V 120A 306W TO-3PN
ECAD Model:
Datasheet:
FGA6560WDF

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Specifications
Fairchild/ON Semiconductor FGA6560WDF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA6560WDF.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Weight
    6.401g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Max Power Dissipation
    306W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Input Type
    Standard
  • Power - Max
    306W
  • Collector Emitter Voltage (VCEO)
    2.3V
  • Max Collector Current
    120A
  • Reverse Recovery Time
    110 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Test Condition
    400V, 60A, 6 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 60A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    84nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    25.6ns/71ns
  • Switching Energy
    2.46mJ (on), 520μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
FGA6560WDF Description

FGA6560WDF is a fast&ultrafast recovery rectifier made by Onsemi. Using novel field stop IGBT technology, the ON Semiconductor’s new series of field stop 3rd generation IGBT FGA6560WDF offers the optimum performance for Welder applications where low conduction and switching losses are essential. The FGA6560WDF operates within ambient temperatures from -55 to 175°C and with Collector- Emitter Voltage 650V. What's more, the power dissipation is 306mW. TO-3PN is its package.

FGA6560WDF Features

Fast Switching
High Current Capability
Maximum Junction Temperature : TJ =175°C
Positive Temperaure Co-efficient for Easy Parallel Operating
Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 60 A
100% of the Parts Tested for ILM(1)
High Input Impedance
RoHS Compliant

FGA6560WDF Applications

Arc welding
-Shipbuilding
-Automotive industries
-Construction industries
-Mechanical industries
MIG (metal inert gas) welding
-Used for most types of sheet metal welding
-Fabrication of pressure vessels and steel structures
-Automotive industry and home improvement industry
TIG (tungsten inert gas) welding
-Aerospace and aircraft construction
-Automotive industry
-Auto body repairs
FGA6560WDF More Descriptions
Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3 Tab) TO-3PN Rail
IGBT, 650 V, 60 A Field Stop Trench
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
IGBT Transistors FS3TIGBT TO3PN 60A 650V
IGBT TRENCH/FS 650V 120A TO3PN
FAST & ULTRAFAST RECOVERY RECTIFIERS;
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.
Product Comparison
The three parts on the right have similar specifications to FGA6560WDF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    HTS Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Number of Pins
    Element Configuration
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Subcategory
    Number of Elements
    Rise Time-Max
    Turn On Delay Time
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Turn On Time
    Turn Off Time-Nom (toff)
    REACH SVHC
    View Compare
  • FGA6560WDF
    FGA6560WDF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~175°C TJ
    Tube
    2016
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    306W
    NOT SPECIFIED
    NOT SPECIFIED
    Standard
    306W
    2.3V
    120A
    110 ns
    650V
    400V, 60A, 6 Ω, 15V
    2.3V @ 15V, 60A
    Trench Field Stop
    84nC
    180A
    25.6ns/71ns
    2.46mJ (on), 520μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FGA6530WDF
    FGA6530WDF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~175°C TJ
    Tube
    2015
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    176W
    NOT SPECIFIED
    NOT SPECIFIED
    Standard
    176W
    2.2V
    60A
    81 ns
    650V
    400V, 30A, 6 Ω, 15V
    2.2V @ 15V, 30A
    Trench Field Stop
    37.4nC
    90A
    12ns/42.4ns
    960μJ (on), 162μJ (off)
    ROHS3 Compliant
    3
    Single
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FGA6560WDF vs FGA6530WDF
  • FGA60N65SMD
    FGA60N65SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    600W
    -
    -
    Standard
    600W
    650V
    120A
    47 ns
    650V
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    Field Stop
    189nC
    180A
    18ns/104ns
    1.54mJ (on), 450μJ (off)
    ROHS3 Compliant
    3
    Single
    SILICON
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1
    70ns
    18 ns
    POWER CONTROL
    N-CHANNEL
    104 ns
    1.9V
    20V
    6V
    68ns
    20.1mm
    15.8mm
    5mm
    No
    Lead Free
    -
    -
    -
    FGA6560WDF vs FGA60N65SMD
  • FGA60N60UFDTU
    FGA60N60UFDTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    6.401g
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    298W
    -
    -
    Standard
    298W
    600V
    120A
    47 ns
    600V
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    ROHS3 Compliant
    3
    Single
    SILICON
    3
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    1
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    600V
    20V
    6.5V
    80ns
    20.1mm
    15.8mm
    5mm
    No
    -
    83 ns
    204 ns
    No SVHC
    FGA6560WDF vs FGA60N60UFDTU
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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