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FGA60N65SMD

Fairchild/ON Semiconductor FGA60N65SMD

Part Number:
FGA60N65SMD
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3071980-FGA60N65SMD
Description:
IGBT 650V 120A 600W TO3P
ECAD Model:
Datasheet:
FGA60N65SMD

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Specifications
Fairchild/ON Semiconductor FGA60N65SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA60N65SMD.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.401g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    600W
  • Number of Elements
    1
  • Rise Time-Max
    70ns
  • Element Configuration
    Single
  • Input Type
    Standard
  • Turn On Delay Time
    18 ns
  • Power - Max
    600W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    104 ns
  • Collector Emitter Voltage (VCEO)
    650V
  • Max Collector Current
    120A
  • Reverse Recovery Time
    47 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    1.9V
  • Test Condition
    400V, 60A, 3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 60A
  • IGBT Type
    Field Stop
  • Gate Charge
    189nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    18ns/104ns
  • Switching Energy
    1.54mJ (on), 450μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    68ns
  • Height
    20.1mm
  • Length
    15.8mm
  • Width
    5mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGA60N65SMD Description
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications that require low conduction and switching losses.

FGA60N65SMD Features
RoHS compliant
High current capability
Fast switching: EOFF =7.5uJ/A
Tightened parameter distribution
Maximum junction temperature : TJ =175 °C
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
Positive temperature co-efficient for easy parallel operating

FGA60N65SMD Applications
UPS
PFC
Welder
Other Industrial
Uninterruptible Power Supply
Energy Generation & Distribution
FGA60N65SMD More Descriptions
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3 Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
IGBT, 650V, 120A, TO-3PN; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PN; No. of Pins: 3Pins;
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Product Comparison
The three parts on the right have similar specifications to FGA60N65SMD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Max Power Dissipation
    Number of Elements
    Rise Time-Max
    Element Configuration
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Turn On Time
    Turn Off Time-Nom (toff)
    REACH SVHC
    View Compare
  • FGA60N65SMD
    FGA60N65SMD
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    SILICON
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOW CONDUCTION LOSS
    8541.29.00.95
    Insulated Gate BIP Transistors
    600W
    1
    70ns
    Single
    Standard
    18 ns
    600W
    POWER CONTROL
    N-CHANNEL
    104 ns
    650V
    120A
    47 ns
    650V
    1.9V
    400V, 60A, 3 Ω, 15V
    2.5V @ 15V, 60A
    Field Stop
    189nC
    180A
    18ns/104ns
    1.54mJ (on), 450μJ (off)
    20V
    6V
    68ns
    20.1mm
    15.8mm
    5mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • FGA6530WDF
    FGA6530WDF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -
    -55°C~175°C TJ
    Tube
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    8541.29.00.95
    -
    176W
    -
    -
    Single
    Standard
    -
    176W
    -
    -
    -
    2.2V
    60A
    81 ns
    650V
    -
    400V, 30A, 6 Ω, 15V
    2.2V @ 15V, 30A
    Trench Field Stop
    37.4nC
    90A
    12ns/42.4ns
    960μJ (on), 162μJ (off)
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    FGA60N65SMD vs FGA6530WDF
  • FGA60N60UFDTU
    FGA60N60UFDTU
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    LOW CONDUCTION LOSS
    8541.29.00.95
    Insulated Gate BIP Transistors
    298W
    1
    -
    Single
    Standard
    -
    298W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    120A
    47 ns
    600V
    600V
    400V, 60A, 5 Ω, 15V
    2.4V @ 15V, 60A
    Field Stop
    188nC
    180A
    23ns/130ns
    1.81mJ (on), 810μJ (off)
    20V
    6.5V
    80ns
    20.1mm
    15.8mm
    5mm
    No
    ROHS3 Compliant
    -
    -
    -
    83 ns
    204 ns
    No SVHC
    FGA60N65SMD vs FGA60N60UFDTU
  • FGA6065ADF
    FGA6065ADF
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    -
    -55°C~175°C TJ
    Tube
    2016
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    8541.29.00.95
    -
    306W
    -
    -
    Single
    Standard
    -
    306W
    -
    -
    -
    2.3V
    120A
    110 ns
    650V
    -
    400V, 60A, 6 Ω, 15V
    2.3V @ 15V, 60A
    Trench Field Stop
    84nC
    180A
    25.6ns/71ns
    2.46mJ (on), 520μJ (off)
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    FGA60N65SMD vs FGA6065ADF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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