Fairchild/ON Semiconductor FDN357N

Name: FDN357N
Brand: Fairchild/ON Semiconductor
SKU: 3070018-FDN357N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDN357N

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070018-FDN357N

Description:: MOSFET N-CH 30V 1.9A SSOT3

ECAD Model:

Datasheet:: FDN357N

Specifications

Fairchild/ON Semiconductor FDN357N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN357N.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
60MOhm
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1.9A
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.9A Ta
Gate Charge (Qg) (Max) @ Vgs
5.9nC @ 5V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
1.9A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Nominal Vgs
1.6 V
Min Breakdown Voltage
30V
Height
940μm
Length
2.92mm
Width
3.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDN357N Description
FDN357N is a type of N-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance. It is well suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching, and low in-line power loss.

FDN357N Features
Extremely low RDS(ON)
High-density cell design
Low gate charge
Proprietary, high cell density, DMOS technology
Available in the SOT-23 package

FDN357N Applications
Notebook computers
Portable phones
PCMCIA cards
Battery-powered circuits

FDN357N More Descriptions

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ
MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Product Comparison

The three parts on the right have similar specifications to FDN357N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Min Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Max Operating Temperature

Min Operating Temperature

Surface Mount

Series

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
FDN357N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

30mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1998

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

60MOhm

Tin (Sn)

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

1.9A

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

5 ns

N-Channel

SWITCHING

60m Ω @ 2.2A, 10V

2V @ 250μA

235pF @ 10V

1.9A Ta

5.9nC @ 5V

12ns

4.5V 10V

±20V

12 ns

12 ns

1.9A

1.6V

20V

30V

30V

1.6 V

30V

940μm

2.92mm

3.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDN337N

Fairchild/ON Semiconductor

-

-

-

-

SOT-23

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

80mΩ @ 3.6A,4.5V

1.3V @ 250uA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

20V

3A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDN357N vs FDN337N
FDN359BN_F095

Fairchild/ON Semiconductor

-

12 Weeks

-

-

-

3

-

-

-

Digi-Reel®

2008

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

150°C

-55°C

-

-

-

-

-

-

-

-

-

-

-

-

FDN357N vs FDN359BN_F095
FDN372S

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

-

yes

Obsolete

1 (Unlimited)

3

-

-

-

NOT SPECIFIED

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

500mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

40m Ω @ 2.6A, 10V

3V @ 1mA

630pF @ 15V

2.6A Ta

8.1nC @ 5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

30V

-

-

-

YES

PowerTrench®

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PDSO-G3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

2.6A

0.04Ohm

30V

FDN357N vs FDN372S