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FDN308P

Fairchild/ON Semiconductor FDN308P

Part Number:
FDN308P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3070152-FDN308P
Description:
MOSFET P-CH 20V 1.5A SSOT-3
ECAD Model:
Datasheet:
FDN308P

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Specifications
Fairchild/ON Semiconductor FDN308P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN308P.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    125MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    -1.5A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    8 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    125m Ω @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    341pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.4nC @ 4.5V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    -1.5A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Nominal Vgs
    -1 V
  • Height
    940μm
  • Length
    2.92mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDN308P Description
FDN308P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The robust gate variant of Fairchild's innovative PowerTrench technology is used in this P-Channel 2.5V specified MOSFET. It was designed with a wide variety of gate drive voltages (2.5V – 12V) in mind for power management applications.

FDN308P Features
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint 
–20 V, –1.5 A. 

FDN308P Applications
Power management
Load switch
Battery protection
FDN308P More Descriptions
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.5A, 125mΩ
MOSFET P-CH 20V 1.5A SSOT-3 / Trans MOSFET P-CH 20V 1.5A 3-Pin SOT-23 T/R
P-Channel 20 V 125 mOhm 2.5 V Specified PowerTrench Mosfet - SSOT-3
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
MOSFET, P CH -1.5A -20V SSOT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SSOT; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.5A; Package / Case:SSOT; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
Product Comparison
The three parts on the right have similar specifications to FDN308P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Contact Plating
    Termination
    Dual Supply Voltage
    Radiation Hardening
    Additional Feature
    Number of Channels
    Max Junction Temperature (Tj)
    Max Operating Temperature
    Min Operating Temperature
    View Compare
  • FDN308P
    FDN308P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    125MOhm
    Tin (Sn)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -1.5A
    NOT SPECIFIED
    Not Qualified
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    8 ns
    P-Channel
    SWITCHING
    125m Ω @ 1.5A, 4.5V
    1.5V @ 250μA
    341pF @ 10V
    1.5A Ta
    5.4nC @ 4.5V
    10ns
    20V
    2.5V 4.5V
    ±12V
    10 ns
    12 ns
    -1.5A
    -1V
    12V
    -20V
    -1 V
    940μm
    2.92mm
    1.4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDN336P
    FDN336P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    200mOhm
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -1.3A
    -
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    7 ns
    P-Channel
    SWITCHING
    200m Ω @ 1.3A, 4.5V
    1.5V @ 250μA
    330pF @ 10V
    1.3A Ta
    5nC @ 4.5V
    12ns
    20V
    2.5V 4.5V
    ±8V
    12 ns
    16 ns
    1.2A
    -900mV
    8V
    -20V
    -900 mV
    940μm
    2.92mm
    1.4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    Tin
    SMD/SMT
    -20V
    No
    -
    -
    -
    -
    -
    FDN308P vs FDN336P
  • FDN338P
    FDN338P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    115mOhm
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -1.6A
    -
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    10 ns
    P-Channel
    SWITCHING
    115m Ω @ 1.6A, 4.5V
    1.5V @ 250μA
    451pF @ 10V
    1.6A Ta
    6.2nC @ 4.5V
    11ns
    20V
    2.5V 4.5V
    ±8V
    11 ns
    16 ns
    1.6A
    -800mV
    8V
    -20V
    -800 mV
    1.22mm
    -
    3.05mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    Tin
    -
    -
    No
    LOGIC LEVEL COMPATIBLE
    1
    150°C
    -
    -
    FDN308P vs FDN338P
  • FDN359BN_F095
    FDN359BN_F095
    Fairchild/ON Semiconductor
    -
    12 Weeks
    -
    -
    -
    3
    -
    -
    -
    Digi-Reel®
    -
    2008
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    150°C
    -55°C
    FDN308P vs FDN359BN_F095
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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