Fairchild/ON Semiconductor FDN336P
- Part Number:
- FDN336P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3070031-FDN336P
- Description:
- MOSFET P-CH 20V 1.3A SSOT3
- Datasheet:
- FDN336P
Fairchild/ON Semiconductor FDN336P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN336P.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance200mOhm
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-1.3A
- Number of Elements1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Turn On Delay Time7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs200m Ω @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
- Rise Time12ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)1.2A
- Threshold Voltage-900mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage-20V
- Nominal Vgs-900 mV
- Height940μm
- Length2.92mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDN336P Description
FDN336P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench process which makes this device capable of minimizing on-state resistance and maintaining a low gate charge. It can be widely used for portable electronics applications, including load switching, power management, DC-DC conversion, and more.
FDN336P Features
Extremely low RDS(ON)
High-performance trench technology
Low gate charge
Low on-state resistance
Available in the SuperSOT?-3 package
FDN336P Applications
Load switching
DC-DC conversion
Power management
Battery charging circuits
FDN336P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench process which makes this device capable of minimizing on-state resistance and maintaining a low gate charge. It can be widely used for portable electronics applications, including load switching, power management, DC-DC conversion, and more.
FDN336P Features
Extremely low RDS(ON)
High-performance trench technology
Low gate charge
Low on-state resistance
Available in the SuperSOT?-3 package
FDN336P Applications
Load switching
DC-DC conversion
Power management
Battery charging circuits
FDN336P More Descriptions
P-Channel PowerTrench® MOSFET, Logic Level, -20V, -1.3A, 200mΩ
Transistor PNP Field Effect FDN336P FAIRCHILD Ampere=1.3 V=20 SOt23
Single P-Channel 20V 0.2 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3
Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt:
P CHANNEL MOSFET, -20V, 1.2A SUPER SOT-3
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDN336P,003, PLASTIC MOLDED, S UPER SOT-3 PKG, SMD (32)MOSFET P-CH 20V 1.3A SUPERSOT3
French Electronic Distributor since 1988
SMALL SIGNAL FIELD-EFFECT TRANSI
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
Transistor PNP Field Effect FDN336P FAIRCHILD Ampere=1.3 V=20 SOt23
Single P-Channel 20V 0.2 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3
Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt:
P CHANNEL MOSFET, -20V, 1.2A SUPER SOT-3
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDN336P,003, PLASTIC MOLDED, S UPER SOT-3 PKG, SMD (32)
French Electronic Distributor since 1988
SMALL SIGNAL FIELD-EFFECT TRANSI
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.
The three parts on the right have similar specifications to FDN336P.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureNumber of ChannelsMax Junction Temperature (Tj)Continuous Drain Current (Id) @ 25°CMax Operating TemperatureMin Operating TemperatureView Compare
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FDN336PACTIVE (Last Updated: 5 days ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2005e3yesActive1 (Unlimited)3SMD/SMTEAR99200mOhmOther Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-1.3A1500mW TaSingleENHANCEMENT MODE500mW7 nsP-ChannelSWITCHING200m Ω @ 1.3A, 4.5V1.5V @ 250μA330pF @ 10V1.3A Ta5nC @ 4.5V12ns20V2.5V 4.5V±8V12 ns16 ns1.2A-900mV8V-20V-20V-900 mV940μm2.92mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------
-
ACTIVE (Last Updated: 6 days ago)10 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)3-EAR99115mOhmOther Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-1.6A1500mW TaSingleENHANCEMENT MODE500mW10 nsP-ChannelSWITCHING115m Ω @ 1.6A, 4.5V1.5V @ 250μA451pF @ 10V1.6A Ta6.2nC @ 4.5V11ns20V2.5V 4.5V±8V11 ns16 ns1.6A-800mV8V-20V--800 mV1.22mm-3.05mmNo SVHCNoROHS3 CompliantLead FreeLOGIC LEVEL COMPATIBLE1150°C---
-
-----SOT-23----Tape & Reel (TR)----------------------N Channel-80mΩ @ 3.6A,4.5V1.3V @ 250uA----20V---------------RoHS Compliant----3A--
-
-12 Weeks----3---Digi-Reel®-2008--------------------------------------------RoHS Compliant-----150°C-55°C
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